(19)
(11) EP 0 535 676 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
12.05.1993 Bulletin 1993/19

(43) Date of publication A2:
07.04.1993 Bulletin 1993/14

(21) Application number: 92116834.0

(22) Date of filing: 01.10.1992
(51) International Patent Classification (IPC)5: H01L 39/24
(84) Designated Contracting States:
DE FR GB

(30) Priority: 02.10.1991 JP 255206/91
02.12.1991 JP 317858/91
18.02.1992 JP 30672/92
29.06.1992 JP 170556/92

(71) Applicants:
  • INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER
    Tokyo 105 (JP)
  • Ishikawajima-Harima Heavy Industries Co., Ltd.
    Chiyoda-ku, Tokyo 100 (JP)
  • SHARP CORPORATION
    Osaka-shi, Osaka 545 (JP)

(72) Inventors:
  • Kubota, Nobuhiko, c/o Int. Supercond. Techn.Center
    Koto-ku, Tokyo (JP)
  • Sugimoto, Tsunemi, c/o Int. Supercond.Techn.Center
    Koto-ku, Tokyo (JP)
  • Sugawara, Kazushi, c/o Int. Supercond.Techn.Center
    Koto-ku, Tokyo (JP)
  • Shiohara, Yuh, c/o Int. Supercond. Techn. Center
    Koto-ku, Tokyo (JP)

(74) Representative: Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät 
Maximilianstrasse 58
80538 München
80538 München (DE)


(56) References cited: : 
   
       


    (54) Bi-Sr-Ca-Cu-O system superconducting thin film and manufacturing method thereof


    (57) A Bi-Sr-Ca-Cu-O system superconducting thin film formed on a substrate comprising [110] single crystals of an ABO₃ type oxide having a perovskite structure, in which a (119) face is selectively grown relative to a substrate surface. The film is formed on the substrate by chemical vapor deposition process. A method of manufacturing a BiSrCaCuO system superconducting film in which an a-axis is oriented preferentially relative to the surface of a substrate comprising MgO (100) single crystals, wherein the chemical composition ratio (Sr+Ca+Cu)/Bi of the BiSrCaCuO system superconducting film is made not less than 3.5. A Bi-Sr-Ca-Cu-O system superconducting thin film formed on a substrate comprising MgO [110] single crystals, in which a (110) face is selectively grown to the substrate surface. The film is formed on the substrate by a chemical vapor deposition process.






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