BACKGROUND OF THE INVENTION
1. Field Of The Invention
[0001] The present invention relates to object position sensing transducers and systems.
More particularly, the present invention relates to object position sensors useful
in applications such as cursor movement for computing devices and other applications.
2. The Prior Art
[0002] Numerous devices are available or have been proposed for use as object position detectors
for use in computer systems and other applications. The most famillar of such devices
is the computer "mouse". While extremely popular as a position indicating device,
a mouse has mechanical parts and requires a surface upon which to roll its position
ball. Furthermore, a mouse usually needs to be moved over long distances for reasonable
resolution. Finally, a mouse requires the user to lift a hand from the keyboard to
make the cursor movement, thereby upsetting the prime purpose, which is usually typing
on the computer.
[0003] Trackball devices are similar to mouse devices. A major difference, however is that,
unlike a mouse device, a trackball device does not require a surface across which
it must be rolled. Trackball devices are still expensive, have moving parts, and require
a relatively heavy touch as do the mouse devices. They are also large in size and
doe not fit well in a volume sensitive application like a laptop computer.
[0004] There are several available touch-sense technologies which may be employed for use
as a position indicator. Resistive-membrane position sensors are known and used in
several applications. However, they generally suffer from poor resolution, the sensor
surface is exposed to the user and is thus subject to wear. In addition, resistive-membrane
touch sensors are relatively expensive. A one-surface approach requires a user to
be grounded to the sensor for reliable operation. This cannot be guaranteed in portable
computers. An example of a one-surface approach is the UnMouse product by MicroTouch,
of Wilmington, MA A two-surface approach has poorer resolution and potentially will
wear out very quickly in time.
[0005] Surface Acoustic Wave (SAW) devices have potential use as position indicators. However,
this sensor technology is expensive and is not sensitive to light touch. In addition,
SAW devices are sensitive to residue buildup on the touch surfaces and generally have
poor resolution.
[0006] Strain gauge or pressure plate approaches are an interesting position sensing technology,
but suffer from several drawbacks. This approach may employ piezo-electric transducers.
One drawback is that the piezo phenomena is an AC phenomena and may be sensitive to
the user's rate of movement. In addition, strain gauge or pressure plate approaches
are a somewhat expensive because special sensors are required.
[0007] Optical approaches are also possible but are somewhat limited for several reasons.
All would require light generation which will require external components and increase
cost and power drain. For example, a "finger-breaking" infra-red matrix position detector
consumes high power and suffers from relatively poor resolution.
BRIEF DESCRIPTION OF THE INVENTION
[0008] The present invention comprises a position-sensing technology particularly useful
for applications where finger position information is needed, such as in computer
"mouse" or trackball environments. However the position-sensing technology of the
present invention has much more general application than a computer mouse, because
its sensor can detect and report if one or more points are being touched. In addition,
the detector can sensa the pressure of the touch.
[0009] There are at least two distinct embodiments of the present invention. Both embodiments
of the present invention include a sensor comprising a plurality of spaced apart generally
parallel conductive lines disposed on a first surface.
[0010] According to a first embodiment of the present invention, referred to herein as a
"finger pointer" embodiment, a position sensing system Includes a position sensing
transducer comprising a touch-sensitive surface disposed on a substrate, such as a
printed circuit board, including a matrix of conductive lines. A first set of conductive
lines runs in a first direction and is insulated from a second set of conductive lines
running in a second direction generally perpendicular to the first direction. An insulating
layer is disposed over the first and second sets of conductive lines. The insulating
layer is thin enough to promote significant capacitive coupling between a finger placed
on its surface and the first and second sets of conductive lines.
[0011] Sensing eledronics respond to the proximity of a finger to translate the capacitance
changes between the conductors caused by finger proximity into position and touch
pressure Information. Its output is a simple X, Y and pressure value of the one object
on Its surface. The matrix of conductive lines are successively scanned, one at a
time, with the capacltive information from that scan indicating how close a finger
is to that node. That information provides a profile of the proximity of the finger
to the sensor in each dimension. The centroid of the profile is computed with that
value being the position of the finger in that dimension. The profile of position
is also integrated with that result providing the Z (pressure) information. The position
sensor of the first embodiment of the invention can only detect the position of one
object on its sensor surface. If more than one object is present, the position sensor
of this embodiment tries to compute the centroid position of the combined set of objects.
[0012] According to a second embodiment of the present invention, a position sensing system
includes a position sensing transducer as described herein. Sensing electronics respond
to the.proximity of a finger to translate the capacitance changes between the conductors
running in one direction and those running in the other direction caused by finger
proximity into position and touch pressure information. The sensing electronics of
the second embodiment of the invention saves information for every node in its sensor
matrix and can thereby give the full X/Y dimension picture of what it is sensing.
It thus has much broader application for richer multi-dimensional sensing than does
the first "finger pointer' embodiment. In this embodiment, referred to herein as the
"position matrix" approach, the x,y coordinate information can be used as input to
a on-chip neural network processor. This allows an operator to use multiple fingers,
coordinated gestures, etc. for even more complex interactions.
BRIEF DESCRIPTION OF THE DRAWINGS
[0013] FIG. 1a is a top view of an object position sensor transducer according to a presently
preferred embodiment of the invention showing the object position sensor surface layer
Including a top conductive trace layer and conductive pads connected to a bottom trace
layer.
[0014] FIG. 1b is a bottom view of the object position sensor transducer of FIG. 1a showing
the bottom conductive trace layer.
[0015] FIG. 1c is a composite view of the object position sensor transducer of FIGS. 1a
and 1b showing both the top and bottom conductive trace layers.
[0016] FIG. 1d is a cross-sectional view of the object position sensor transducer of FIGS.
1a-1c.
[0017] FIG. 2 is a block diagram of sensor decoding electronics which may be used with the
sensor transducer in accordance with a first embodiment of the present invention.
[0018] FIGS. 3a and 3b are graphs of output voltage versus matrix conductor position which
illustrate the effect of the minimum detector.
[0019] FIG. 4 is a simplified schematic diagram of an integrating charge amplifier circuit
suitable for use in the present invention.
[0020] FIG. 5 is a timing diagram showing the relative timing of control signals used to
operate the object position sensor system of the present invention with an integrating
charge amplifier as shown in FIG. 4.
[0021] FIG. 6a is a schematic diagram of a first alternate embodiment of an integrating
charge amplifier circuit suitable for use in the present invention including additional
components to bring the circuit to equilibrium prior to integration measurement.
[0022] FIG. 6b is a timing diagram showing the control and timing signals used to drive
the integrating charge amplifier of FIG. 6a and the response of various nodes in the
amplifier to those signals.
[0023] FIG. 7a is a schematic diagram of a second alternate embodiment of an integrating
charge amplifier circuit suitable for use in the present invention including additional
components to bring the circuit to equilibrium prior to integration measurement.
[0024] FIG. 7b is a timing diagram showing the control and timing signals used to drive
the integrating charge amplifier of FIG. 7a and the response of various nodes in the
amplifier to those signals.
[0025] FIG. 8 is a schematic diagram of a minimum detector circuit according to a presently
preferred embodiment of the invention.
[0026] FIG. 9 is a schematic diagram of a maximum detector circuit according to a presently
preferred embodiment of the invention.
[0027] FIG. 10 is a schematic diagram of a linear voltage-to-current converter circuit according
to a presently preferred embodiment of the invention.
[0028] FIG. 11 is a schematic diagram of a position encoder centroid computing circuit according
to a presently preferred embodiment of the invention.
[0029] FIG. 12 is a schematic diagram of a Z Sum circuit according to a presently preferred
embodiment of the invention.
[0030] FIG. 13 is a schematic diagram of a multiplier circuit according to a presently preferred
embodiment of the invention.
[0031] FIG. 14 is a schematic diagram of a combination driving-point impedance circuit and
receiving-point impedance circuit according to a presently preferred position matrix
embodiment of the invention.
[0032] FIG. 15 is a block diagram of a the structure of a portion of a sample/hold array
suitable for use in the present invention.
[0033] FIG. 16a is a block diagram of a simple version of a position matrix embodiment of
the present invention in which the matrix of voltage information is sent to a computer
which processes the data.
[0034] FIG. 16b is a block diagram of a second version of a position matrix embodiment of
the present invention employing a sample/hold array such as that depicted in FIG.
15.
DETAILED DESCRIPTION OF A PREFERRED EMBODIMENT
[0035] Those of ordinary skill in the art will realize that the following description of
the present invention is illustrative only and not in any way limiting. Other embodiments
of the invention will readily suggest themselves to such skilled persons.
[0036] The present invention brings together in combination a number of unique features
which allow for new applications not before possible. Because the object position
sensor of the present invention has very low power requirements, it is beneficial
for use in battery operated or low power applications such as lap top or portable
computers. It is also a very low cost solution, has no moving parts (and is therefore
virtually maintenance free), and uses the existing printed circuit board traces for
sensors. The sensing technology of the present invention can be integrated into a
computer motherboard to even further lower its cost in computer applications. Similarly,
in other applications the sensor can be part of an already existent circuit board.
[0037] Because of its small size and low profile, the sensor technology of the present invention
is useful in lap top or portable applications where volume is important consideration.
The sensor technology of the present invention requires circuit board space for only
a single sensor interface chip that can interface directly to a microprocessor, plus
the area needed on the printed circuit board for sensing.
[0038] The sensor material can be anything that allows creation of a conductive X/Y matrix
of pads. This includes not only standard PC board, but also flexible PC board, conductive
elastomer materials, and piezo-electric Kynar plastic materials. This renders it useful
as well in any portable equipment application or in human interface where the sensor
needs to be molded to fit within the hand.
[0039] The sensor can be conformed to any three dimensional surface. Copper can be plated
in two layers on most any surface contour producing the sensor. This will allow the
sensor to be adapted to the best ergonomic form needed for a application. This coupled
with the "light-touch" feature will make it effortless to use in many applications.
The sensor can also be used in an indirect manner, i.e it can have a conductive foam
over the surface and be used to detect any object (not just conductive) that presses
against it's surface.
[0040] Small sensor areas are practical, i.e., a presently conceived embodiment takes about
1.5"x 1.5" of area, however those of ordinary skill in the art will recognize that
the area is scalable for different applications. The matrix area is scaleable by either
varying the matrix trace spacing or by varying the number of traces. Large sensor
areas are practical where more information is needed.
[0041] Besides simple X and Y position information, the sensor technology of the present
invention also provides finger pressure information. This additional dimension of
information may be used by programs to control special features such as "brush-width"
modes in Paint programs, special menu accesses, etc., allowing provision of a more
natural sensory input to computers.
[0042] The user will not even have to touch the surface to generate the minimum reaction.
This feature can greatly minimize user strain and allow for more flexible use.
[0043] The sense system of the present invention depends on a transducer device capable
of providing position and pressure information regarding the object contacting the
transducer. Referring first to FIGS. 1a-1d, top, bottom, composite, and cross-sectional
views, respectively, are shown of a presently-preferred touch sensor array for use
in the present invention. Since capacitance is exploited by this embodiment of the
present invention, the sensor surface is designed to maximize the capacitive coupling
between top (X) trace pads to the bottom (Y) trace pads in a way that can be maximally
perturbed and coupled to a finger or other object placed above the surface.
[0044] A presently preferred sensor array 10 according to the present invention comprises
a substrate 12 Including a set of first conductive traces 14 disposed on a top surface
16 thereof and run in a first direction to comprise rows of the array. A second set
of conductive traces 18 are disposed on a bottom surface 20 thereof and run In a second
direction preferably orthogonal to the first direction to form the columns of the
array. The top and bottom conductive traces 14 and 18 are alternately in contact with
periodic sense pads 22 comprising enlarged areas, shown as diamonds in FIGS. 1a-1c.
While sense pads 22 are shown as diamonds in FIGS. 1a-1c, any shape, such as circles,
which allows close packing of the sense pads, is equivalent for purposes of this invention.
[0045] The number and spacing of these sense pads 22 depends upon the resolution desired.
For example, in an actual embodiment constructed according to the principles of the
present invention, a 0.10 inch center-to-center diamond-shaped pattern of conductive
pads disposed along a matrix of 15 rows and 15 columns of conductors is employed.
Every other sense pad 22 in each direction in the pad pattern is connected to conductive
traces on the top and bottom surfaces 16 and 20, respectively of substrate 12.
[0046] Substrate 12 may be a printed circuit board, a flexible circuit board or any of a
number of available circuit interconnect technology structures. Its thickness is unimportant
as long as contact may be made therethrough from the bottom conductive traces 18 to
their sense pads 22 on the top surface 16. The printed circuit board comprising substrate
12 can be constructed using standard Industry techniques. Board thickness is not important.
Pad-to-pad spacing should preferably be minimized to something in the range of about
15 mils or less. Connections from the conductive pads 22 to the bottom traces 18 may
be made employing standard plated-through hole techniques well known in the printed
circuit board art.
[0047] An insulating layer 24 is disposed over the sense pads 22 on top surface 16 to insulate
a human finger or other object therefrom. Insulating layer 24 is preferably a thin
layer (i.e., approximately 5 mils) to keep capacitive coupling large and may comprise
a material, such as mylar, chosen for its protective and ergonomic characteristics.
[0048] There are two different capacitive effects taking place when a finger approaches
the sensor array 10. The first capacitive effect is trans-capacitance, or coupling
between sense pads 22, and the second capacitive effect is self-capacitance (ground
capacitance), or coupling to earth-ground. Sensing circuitry is coupled to the sensor
array 10 of the present invention and responds to changes in either or both of these
capacltances, This is important because the relative sizes of the two capacitances
change greatly depending on the user environment. The ability of the present invention
to detect changes in both self capacitance and trans-capacitance results in a very
versatile system having a wide range of applications.
[0049] According to a first embodiment of the invention, a position sensor system including
sensor array 10 and associated touch detector circuitry will detect a finger position
on a matrix of printed circuit board traces via the capacitive effect of finger proximity
to the sensor array 10. The position sensor system will report the X, Y position of
a finger placed near the sensor array 10 to much finer resolution than the spacing
between the row and column traces 14 and 18. The position sensor according to this
embodiment of the invention will also report a Z value proportional to the outline
of that finger and hence Indicative of the pressure with which the finger contacts
the surface of insulating layer 22 over the sensing array 10.
[0050] According to a presently preferred embodiment of the invention, a very sensitive,
light-touch detector circuit may be provided using adaptive analog VLSI techniques.
The circuit of the present invention is very robust and calibrates out process and
systematic errors. The detector circuit of the present invention will process the
capacitive input information and provide digital information to a microprocessor.
[0051] According to this embodiment of the invention, sensing circuitry is contained on
a single sensor processor integrated circuit chip. The sensor processor chip can have
any number of X and Y "matrix" inputs. The number of X and Y inputs does not have
to be equal. The Integrated circuit has a digital bus as output. In the illustrative
example disclosed in FIGS. 1a-1d herein, the sensor array has 15 traces in both the
Y and Y directions. The sensor processor chip thus has 15 X inputs and 15 Y inputs.
[0052] The X and Y matrix nodes are successively scanned, one at a time, with the capacitive
information from that scan indicating how close a finger is to that node. The scanned
information provides a profile of the finger proximity in each dimension. According
to this aspect of the present invention, the profile centroid is derived in both the
X and Y directions and is the position in that dimension. The profile curve of proximity
is also integrated to provide the Z information.
[0053] Referring now to FIG. 2, a block diagram of presently preferred sensing circuitry
30 for use according to the present invention is shown. The sensing circuitry of this
embodiment employs a driving-point impedance measurement for each X and Y line in
the sensing matrix 10. The block diagram of FIG. 2 illustrates the portion of the
sensing circuitry for developing signals from one direction (shown as X in the matrix).
The circuitry for developing signals from the other direction in the matrix is identical
and Its interconnection to the circuitry shown in FIG. 2 will be disclosed herein.
The circuitry of FIG. 2 illustratively discloses an embodiment in which information
from six X matrix lines X1 . . . X6 are processed. Those of ordinary skill in the
art will recognize that this embodiment is illustrative only, and that actual embodiments
fabricated according to the present invention may employ an arbitrarily sized matrix,
limited only by technology constraints.
[0054] The driving-point capacitance measurement for each of X lines X1 ... X6 is derived
from an integrating charge amplifier circuit. These circuits are shown in block form
at reference numerals 32-1 through 32-6. The function of each of integrating charge
amplifier circuits 32-1 through 32-6 is to develop an output voltage proportional
to the capacitance sensed on its corresponding X matrix line.
[0055] The driving-point capacitance measurement is made for all X (row) conductors 14 and
all Y (column) conductors 18 in the sensor matrix array 10. A profile of the finger
proximity mapped into the X and Y dimension is generated from the driving-point capacitance
measurement data. This profile is then used to determine a centrold in both dimensions,
thereby determining the X and Y position of the finger.
[0056] The output voltages of integrating charge amplifier circuits 32-1 through 32-6 are
utilized by several other circuit elements and are shown for convenience in FIG. 2
as distributed by bus 34. Bus 34 is a six conductor bus, and those of ordinary skill
in the art will recognize that each of its conductors comprises the output of one
of integrating charge amplifiers 32-1 through 32-6.
[0057] The first of circuit elements driven by the outputs of integrating charge amplifier
circuits 32-1 through 32-6 Is linear voltage-to-current converter 36. The function
of linear voltage-to-current converter 36 is to convert the output voltages of integrating
charge amplifiers 32-1 through 32-6 to currents for subsequent processing.
[0058] The current outputs from linear voltage-to-current converter 36 are presented as
inputs to X position encode circuit 38. The function of X position encode circuit
38 is to convert the input information into a signal representing object proximity
in the X dimension of the sensor array matrix. According to a presently preferred
embodiment of the invention, this circuit will provide a scaled weighted mean (centroid)
of the set of input currents. The result is a circuit which is a linear position encoder,having
an output voltage which varies between the power supply rails. Because it is a weighted
mean, it averages all current inputs and can in turn generate an output voltage which
represents an X position with a finer resolution than the spacing of the X matrix
grid spacing.
[0059] The output voltage of X position encode circuit 38 is presented to sample/hold circuit
40, the output of which, as is well known in the art, either follows the Input or
holds a value present at the input depending on the state of its control input 42.
The structure and operation of sample/hold circuits are well known in the art.
[0060] The output of sample/hold circuit 40 drives the input of analog-to-digital (A/D)
converter 44. The output of A/D converter 44 is a digital value proportional to the
position of the object in the X dimension of the sensor array matrix 10.
[0061] While the portion of the circuit described so far is useful for providing a digital
signal indicating object position in one dimension, the addition of further circuit
elements yields a more useful device which is more immune to noise, detects and subtracts
the no-object-proximate signal from the outputs of the sensors, and provides threshold
detection of an approaching object.
[0062] The first of these additional circuit elements is minimum detector circuit 46. The
function of minimum detector circuit 46 is to determine the level of signal representing
ambient no-object-proximate to the sensor array matrix 10 and to provide a signal
which may be fed back to integrating charge amplifiers 32-1 through 32-6 to control
their output voltages to effectively zero out the outputs of the amplifiers under
the ambient condition. The output of minimum detector 46 circuit is a voltage. This
voltage is compared in operational amplifier 48 with an adjustable voltage representing
a minimum threshold value V
Thmin. Through feedback to the integrating charge amplifiers 32-1 through 32-6, amplifier
48 adjusts its output to balance the output voltage of Minimum detector circuit 46
with the voltage VThmin. Feedback'is controlled by P-channel MOS transistor 50, which
allows the feedback to operate only when the PROCESS signal is active.
[0063] FIGS. 3a and 3b are graphs of output voltage versus matrix conductor position which
illustrate the effect of the minimum detector circuit 46. In order to better illustrate
the effect of offset cancellation, FIGS. 3a and 3b show the outputs of integrating
charge amplifiers from a fifteen row matrix, rather than from a six row matrix as
is implied by FIG. 2. FIG. 3a shows the offset component of the voltage outputs of
integrating charge amplifiers without the operation of minimum detector 46, and FIG,
3b shows the voltage outputs with the offset having been zeroed out by the feedback
loop comprising minimum detector circuit 46, P-channel MOS transistor 50, and feedback
conductor 52.
[0064] Another additional circuit component is maximum detector circuit 54. The function
of maximum detector circuit 54, working in co-operation with amplifier 56, OR gate
58, and AND gate 60 is to provide a MAX INTERRUPT signal. The MAX INTERRUPT signal
alerts the microprocessor controlling the object sensor system of the present invention
that an object is approaching the sensor array matrix 10. The amplifier 56 acts as
a comparator which trips if the output voltage from maximum detector circuit 54 exceeds
the threshold set by the voltage V
Thmax. When the output voltage from maximum detector circuit 54 exceeds the threshold,
or the output voltage from the corresponding Y maximum detector (not shown) exceeds
the threshold set for its corresponding amplifier, the output of OR gate 58 becomes
true. That and a true SAMPLE signal at the second input of AND gate 60 causes a true
MAX INTERRUPT signal at its output.
[0065] The Z Sum circuit 62 produces an output which is proportional to the pressure with
which a finger is pressing on the sensor. This is done in both the X and Y dimensions
by effectively integrating the areas under the curves of FIG. 3b. Referring again
to FIG. 3b for illustration purposes, it can be seen that the width of the contact
area in the X dimension of the sensor array 10 is from about X₂ to X₁₀.
[0066] According to a presently preferred embodiment of the invention, Z Sum circuit 62
is configured to produce an output voltage V
O. Output voltage V
O is a scaled function of all the input voltages.
[0067] Since the outputs of the Z Sum circuits 62 in both the X and Y directions are proportional
to the width of the pointing finger or other flexible object in the two dimensions
of the sensor array matrix 10, the area of the finger or other flexible object is
a reliable measure of the pressure with which the finger is contacting the surface
of the sensor array matrix 20. The area may be calculated by multiplier circuit 64,
having the output of the Z Sum circuit in the X dimension as one of its inputs and
the output of the Z Sum circuit in the Y dimension as the other one of its inputs.
[0068] A presently preferred embodiment of multiplier circuit takes two analog voltage inputs
and performs an analog computation on those voltages to create a voltage output which
is proportional to the product of the two input voltages. As shown in FIG. 2, a first
input term is the output voltage of the X dimension Z Sum circuit 62 and a second
input term is the output of the Y dimension Z Sum circuit (not shown). Those of ordinary
skill in the art will recognize that since multiplication is commutative process and
since the multiplier inputs are symmetrical, it does not matter which of the X and
Y Z sum circuits contributes the first input term and which contributes the second
input term.
[0069] The output of multiplier circuit 64 is a voltage and drives a sample/hold circuit
66. Sample/hold circuit 66 may be identical to sample/hold circuit 40 and may be driven
by the same SAMPLE signal which drives sample/hold circuit 40.
[0070] The output of sample/hold circuit 66 drives the input of analog-to-digital (A/D)
converter 68. A/D converter 68 may be identical to A/D converter 44. The output of
A/D converter 68 is a digital value proportional to the pressure with which the finger
(or other flexible object) is contacting the surface of sensor array matrix 10.
[0071] The object position sensor system of the present invention may be operated under
the control of a microprocessor which provides the timing and other control signals
necessary to operate the system. For example, the MAX INTERRUPT signal from the output
of AND gate 60 may be used to interrupt the microprocessor and invoke an object sensing
routine. The particular timing and control signals employed by any system constructed
according to the present invention will vary according to the individual design. The
following is therefore an illustrative disclosure providing circuit details of illustrative
circuit components of a presently preferred system according to the present invention
and including disclosure of typical timing and control signals for operating these
circuits.
[0072] Referring now to FIG. 4, a simplified schematic diagram of an integrating charge
amplifier circuit 70 operating in a driving-point capacitance measuring mode suitable
for use in the present invention is shown. Integrating charge amplifier circuit 70
is derived from the common integrating amplifier seen in the literature, for example
in Gregorian and Temes, Analog MOS Integrated Circuits, John Wiley & Sons (1986) pp.
270-271; Haskard and May, Analog VLSI Design, Prentice Hall (1988), pp. 105-106, and
is built around amplifying element 72, which may comprise a common transconductance
amplifier as described in Mead, Analog VLSI and Neural Systems, Addison-Wesley (1989)
pp. 70-71. The inverting input of amplifying element is connected to an input node
74 through a switch 76 controlled by a SELECT(n) node 78. The input node is connected
to one of the lines in the sensor array matrix of FIG. 1. While the disclosure herein
illustrates the use of an integrating charge amplifier connected to a row line of
the matrix, those of ordinary skill in the art will recognize that the operation of
the integrating charge amplifiers connected to the column lines of the array is identical.
[0073] The non-inverting input of amplifying element 72 is connected to a Voltage step input
node 80. A capacitor 82 is connected as an integrating feedback element between the
output and inverting input of amplifying element 72. According to a presently preferred
embodiment of the invention, capacitor 82 may have a capacitance of about 10 pF.
[0074] The output of amplifying element 72 is connected to an output node 84 through a switch
86. Switch 86 is controlled by the SELECT(n) node 78 which also controls switch 76.
A capacitor 88, which may have a capacitance of about 3 pF, is connected between output
node 84 and an offset adjust node 90. Those of ordinary skill in the art will recognize
that switches 76 and 86 may comprise common CMOS pass gates, each including an N-channel
and a P-channel MOS transistor connected in parallel with their gates driven by complimentary
signals. Those of ordinary skill in the art will recognize that the combination of
switch 86 and capacltor 88 form a simple sample/hold circuit the offset of which may
be adjusted when the switch is in its off position via the voltage on node 90.
[0075] Amplifying element 72 also includes a BIAS input node 92, which may be connected
to an on-chip current bias reference which may be used for all of the integrating
charge amplifiers on the chip.
[0076] A driving-point capacitance measurement is made by closing switches 76 and 86 and
stepping, by an amount Vstep, the input voltage on Voltage step input node 80 at the
non-inverting input of amplifying element 72. Because of the negative feedback arrangement,
the output of amplifying element 72 will then move to force the voltage at its inverting
input to match the voltage at its non-inverting input. The result is that the voltage
at the output node 84 changes to a value that injects enough charge into capacitor
82 to match the charge that is injected into the capacitance on the sensor array matrix
line connected to input node 74. This change may be expressed as:

where V
out is the output voltage, C
matrix is the capacitance on the row or column line of the sensor array matrix to which
input node 74 is connected and C₈₂ is capacitor 82..
[0077] When a finger approaches the sensor array matrix 10, C
matrix will increase in magnitude. The result is that Vout will also increase in a driving-point
capacitance measurement made as the finger approaches. V
out is proportional to the proximity of a finger (conductive object) to the sensor array
matrix line connected to input node 74. As described above, the driving-point capacitance
measurement gives an output voltage change that is directly proportional to the sensor
capacitance that is to be measured.
[0078] Subtracting the V
out value with no object present from the V
out value where there is an object present results in a V
out difference that is proportional to the change in capacitance at the row line of the
sensor array matrix to which input node 74 is connected. Thus:




[0079] According to a presently preferred embodiment of the invention, this subtraction
operation may be performed by applying an the offset adjust voltage to capacitor 88
at offset adjust node 90. This voltage may be presented to the amplifier circuit via
line 52 (FIG. 2) and is controlled by the Minimum Detect circuit 46 when the PROCESS
control line is active. The Offset Adjust subtracts the "no object voltage" from the
output node 84 and leaves an output voltage directly proportional to the change of
the capacitance at the row line of the sensor array matrix to which input node 74
is connected caused by the approaching object.
[0080] To operate the object position sensing system of the present invention, the integrating
charge amplifiers 70 are selected one at a time using their select nodes 78. This
closes both switch 76 and 86 to start the integrator and to start sampling the results
of this operation. The voltage at the Voltage step input node 80 is stepped, and the
circuit is allowed to settle. After sufficient settling time the select signal is
disabled, switches 76 and 86 are opened and the sampled result is left stored at the
output node 84 on capacitor 88.
[0081] After all of the row and column lines of the sensor array matrix 10 have been scanned,
a PROCESS cycle takes place, and the minimum Detect circuits 46 in both the X and
Y dimensions adjust the output voltages on capacitors 88 in all integrating charge
amplifiers 70 via the common input line 52 to all amplifiers.
[0082] Referring now to FIG. 5 a timing diagram shows the relationship between the timing
and control signals used to operate the object position sensor system of the present
invention utilizing the integrating charge amplifier of FIG. 4. In the embodiment
illustrated in FIG. 5, first all X and Y integrating charge amplifiers are sequentially
selected, followed by a PROCESS signal and then a SAMPLE signal.
[0083] Additional components may be added to integrating charge amplifiers 70, largely to
bring the circuits to equilibrium before the integration takes place. Referring now
to FIG. 6a, In an alternate embodiment of an integrating charge amplifier 100, all
components of the embodiment of FIG. 4 are present. In the embodiment of FIG. 6a,
the portion of the cycle in which a global RESET node is true is used to equibrilate
the circuit by discharging the integrating feedback capacitor to zero volts. The voltage
V
STEP is then provided to the non-inverting input of the amplifying element 72 in a manner
which allows easily controlled stepping between the two designated voltages, V
LOW and V
HIGH.
[0084] The additional components in integrating charge amplifier 100 include a switch 102
connected across capacitor 82 connected to a RESET node 104 connected to all of the
integrating charge amplifiers in the system. When the RESET signal is true at the
beginning of each scanning cycle, switch 102 turns on and discharges the capacitor
82 to zero volts.
[0085] A switch 106 is connected between the input node 74 and ground has a control element
connected to a RESET1(n) node 108. The RESET1(n) node 108 is active for all integrating
charge amplifiers except for the one selected by its SELECT(n) node to perform the
driving-point Impedance measurement. Its function is to discharge any voltage present
on those nodes due to the capacitive coupling to the other nodes which have been driven
by the scanning process and thereby eliminate or minimize the error which such voltages
would introduce into the measurement process.
[0086] Finally, the V
STEP voltage may be provided to the non-inverting input of amplifying element 72 by employing
switches 110 and 112. Switch 110 is connected between a V
HiGH voltage node 114 and the non-inverting input of amplifying element 72, and is controlled
by a STEP node 116. Switch 112 is connected between a V
LOW voltage node 118 and the non-inverting input of amplifying element 72, and is controlled
by a STEP\ node 120. Switches 102, 106,110, and 112 may comprise common CMOS pass
gates.
[0087] Referring now to FIG. 6b, a timing diagram shows the relationships between the various
control signals and the voltages present on selected nodes of the Integrating charge
amplifier circuit 100 of FIG. 6a during scan cycles (n-1), (n), and (n+1). As can
be seen from FIG. 6b, the global RESET signal at node 104 discharges the capacitors
82 of all integrating charge amplifiers 100 in the system at the beginning of each
scanning cycle. The RESET1(n) signal at node 108 is coincident with the RESET signal
during scanning cycles (n-1) and (n+1) but does not appear at the node 108 of the
integrating charge amplifier 100 which is making the driving-point impedance measurement
during scanning cycle (n). As those of ordinary skill in the art will readily appreciate
from the description herein, the RESET1(n) signal for any integrating charge amplifier
100n may be generated by simple logic circuitry to implement the logic function RESET1(n)
= RESET · SELECT(n)\.
[0088] FIG. 6b also shows the STEP and STEP\ signals drive the non-inverting input of amplifying
element 72 first to V
LOW and then to V
HIGH during each scanning cycle. The signals N1, N2, and N3 represent the voltages present
at the inverting input, the non-inverting input, and the output, respectively, of
amplifying element 72. As can be seen from FIG. 6b, the voltage V
meas, the voltage of interest, remains at the output node of integrating charge amplifier
100 even after the end of scan cycle (n) in which it was developed.
[0089] Referring now to FIG. 7a, an embodiment of an integrating charge amplifier 130 according
to the present invention is an approach that provides a larger operating range for
the integration. The embodiment of FIG. 7a is nearly identical in its structure and
operation to the embodiment of FIG. 6a, except that instead of switch 102 acting to
discharge capacitor 82 to zero volts when the RESET input 104 is true, switch 132,
which may comprise a common CMOS pass gate, is used to force the output of amplifying
element 72 to ground (zero volts) instead of to V
LOW as in the embodiment of FIG. 6a. A switch 134, also controlled by RESET input 104,
is used to short together the inverting and non-inverting inputs of amplifier 72,
forcing them both to an equilibrium voltage of V
LOW. In low power supply-voltage applications, such as found in notebook computers, this
circuit increases the signal sensitivity by a factor of two.
[0090] FIG. 7b is a timing diagram which shows the relationships between the various control
signals and the voltages present on selected nodes of the integrating charge amplifier
circuit 130 of FIG. 7a during scan cycles (n-1), (n), and (n+1). As can be seen from
FIG. 7b, the global RESET signal at node 104 forces the outputs of all integrating
charge amplifiers 100 in the system to zero volts at the beginning of each scanning
cycle. As in the embodiment of FIG. 7a, the RESET1(n) signal at node 108 is coincident
with the RESET signal during scanning cycles (n-1) and (n+1) but does not appear at
the node 108 of the integrating charge amplifier 130 which is making the driving-point
impedance measurement during scanning cycle (n).
[0091] Like the embodiment of FIG. 6a, in the embodiment of FIG. 7a the STEP and STEP\ signals
drive the non-inverting input of amplifying element 72 first to V
LOW and then to V
HIGH during each scanning cycle. The signals N1, N2, and N3 represent the voltages present
at the inverting input, the non-inverting input, and the output, respectively, of
amplifying element 72. As can be seen from FIG. 7b, the voltage V
meas, the voltage of interest, remains at the output node of integrating charge amplifier
130 even after the end of scan cycle (n) in which it was developed.
[0092] Referring now to FIG. 8, a schematic diagram is presented of a minimum detector circuit
46 of FIG. 2. While the X dimension minimum detector circuit 46 is illustratively
disclosed herein, those of ordinary skill in the art will understand that the Y dimension
minimum detector circuit functions in the same manner.
[0093] According to a presently preferred embodiment of the invention, minimum detector
circuit 46 includes a P-channel bias transistor 142 having its source connected to
a voltage source V
DD and its gate connected to a bias voltage V
BIAS. The inputs of the minimum detector circuit are connected to the output nodes 84
of the respective integrating charge amplifiers. In the minimum detector circuit illustrated
in FIG. 8, there are (n) inputs. Each input section comprises a series pair of MOS
transistors connected between the drain of P-channel bias transistor 142 and ground.
[0094] Thus, the input section for ln₁ comprises P-channel MOS input transistor 144 having
its source connected to the drain of P-channel MOS bias transistor 142 and N-channel
MOS current-limiting transistor 146 having its drain connected to the drain of P-channel
MOS input transistor 144 and its source connected to ground. The gate of P-channel
MOS input transistor 144 is connected to ln₁ input node 148 and the gate of N-channel
MOS current-limiting transistor 146 is connected to a source of limiting bias voltage
VL
BIAS at node 150.
[0095] Similarly, the input section for ln₂ comprises P-channel MOS input transistor 152
having its source connected to the drain of P-channel MOS bias transistor 142 and
N-channel MOS current-limiting transistor 154 having its drain connected to the drain
of N-channel MOS input transistor 152 and its source connected to ground. The gate
of P-channel MOS input transistor 152 is connected to ln₂ input node 156 and the gate
of N-channel MOS current-limiting transistor 154 is connected to node 150.
[0096] The input section for ln₃ comprises P-channel MOS input transistor 158 having its
source connected to the drain of P-channel MOS bias transistor 142 and N-channel MOS
current-limiting transistor 160 having its drain connected to the drain of P-channel
MOS Input transistor 158 and its source connected to ground. The gate of P-channel
MOS input transistor 158 is connected to ln₃ input node 162 and the gate of N-channel
MOS current-limiting transistor 160 is connected to node 150.
[0097] The input section for In
(n) comprises P-channel MOS input transistor 164 having its source connected to the drain
of P-channel MOS bias transistor 142 and N-channel MOS current-limiting transistor
166 having its drain connected to the drain of P-channel MOS input transistor 164
and its source connected to ground. The gate of P-channel MOS input transistor 164
is connected to ln
(n) input node 168 and the gate of N-channel MOS current-limiting transistor 146 is connected
to node 150. The output of minimum detector circuit 46 is node 170.
[0098] Without averaging control, V
BIAS and V
LBIAS would be set so that the saturation currents in any one of transistors 146, 154,
160 .. 166 is much larger than the saturation current in transistor 142. In this mode,
assume that ln1 is the smallest voltage of all n inputs. In this case transistor 144
is turned on strongly with transistor 146 taking all the current from transistor 142.
As a result, output node 170 moves down until transistor 144 is on just enough to
sink all the current from transistor 142. In this case all other transistor pairs
(152/154, 158/160, ...164/166) turn off because their p-channel devices have an input
voltage drive of less than that of transistor 144. The result is that the output is
directly related to the minimum input voltage and is offset therefrom by a gate bias
voltage.
[0099] Operating the minimum detector circuit 46 of FIG. 8 in an averaging mode provides
substantial noise rejection in the system. If for some reason one input was noisy
and gave a much smaller value than all other values it could cause the generation
of an erroneous output voltage. According to the present invention, the goal is to
detect the "background level" of an input with no input stimulus. This would be the
true minimum value. Since there are typically more than one input in this state, several
inputs can be averaged to form the minimum signal. This is done via the averaging
mode, which is enabled by setting the VL
BIAS current of each transistor 146, 154, 160, ... 166 to be some fraction of the current
from transistor 142.
[0100] For this invention the current set by V
LBIAS is approximately one-third of the current from transistor 142. Therefore, in order
to sink all of the current from transistor 142, at least three input pairs (144/146,
...164/166) must be turned on. For that to happen the output node 170 must then be
sitting at a voltage equal to a p-channel bias voltage above the third lowest input.
It has thus, in effect, filtered out and ignored the two lower values.
[0101] The present embodiment of the minimum detect circuit of FIG. 8 has been described
in terms of separately deriving an X minimum signal and a Y minimum signal and separately
computing their weighted minima. Those of ordinary skill in the art will recognize
that, pursuant to an equivalent embodiment, the weighted minima of the combined X
and Y signals could be computed utilizing the principles disclosed herein.
[0102] Referring again to FIG. 2, the output of amplifier 48 (a transconductance amplifier
operating as a comparator) and the bottom of capacitor 88 in the integrating charge
amplifiers 70, 100, and 130 of FIGS. 4, 6a, and 7a has been held high by MOS transistor
50 during the scan operation or non-PROCESS cycles when the global PROCESS signal
(FIG, 5) is low. When the PROCESS cycle starts, the PROCESS line goes high and MOS
transistor 50 is turned off, thus enabling the action of minimum detector circuit
46. If the output of minimum detector circuit 46 is greater than the V
Thmin at the input of amplifier 48, the output of amplifier 48 is driven low. This is a
feedback loop because when the bottom of capacitor 88 in the integrating charge amplifiers
drives low it pulls the outputs of all integrating charge amplifiers (32-1 through
32-6) low also. This in turn pulls the output of minimum detector circuit 46 low.
This feedback-settling process continues until the minimum detector circuit 46 output
equals the V
Thmin (FIG. 3b).
[0103] The V
Thmin voltage is chosen so that when the integrating charge amplifiers (32-1 through 32-6)
outputs are shifted down, the minimum charge amplifier output will generate no current
in the voltage-to-current converter circuits 36.
[0104] Referring now to FIG. 9, the maximum detector circuit 54 will be disclosed. According
to a presently preferred embodiment of the invention, maximum detector circuit 54
includes an N-channel bias transistor 182 having its source connected to ground and
its gate connected to a bias voltage V
BIAS at node 184. The inputs of the maximum detector circuit are connected to the output
nodes 84 of the respective integrating charge amplifiers In the maximum detector circuit
illustrated in FIG. 9, there are (n) inputs. Each input section comprises a series
pair of MOS transistors connected between the drain of N-channel bias transistor 182
and a voltage source V
DD.
[0105] Thus, the input section for ln₁ comprises P-channel MOS current-limiting transistor
186 having its source connected to V
DD and its drain connected to the drain of N-channel MOS input transistor 188. The gate
of N-channel MOS input transistor 188 is connected to ln₁ input node 190 and the gate
of P-channel MOS current-limiting transistor 186 is connected to a source of bias
voltage VL
BIAS at node 192. Similarly, the input section for ln₂ comprises P-channel MOS current-limiting
transistor 194 having its source connected to V
DD and its drain connected to the drain of N-channel MOS input transistor 196. The gate
of N-channel MOS input transistor 196 is connected to ln₂ input node 198 and the gate
of P-channel MOS current-limiting transistor 194 is connected to node 192. The input
section for ln₃ comprises P-channel MOS current-limiting transistor 200 having its
source connected to VDD and its drain connected to the drain of N-channel MOS input
transistor 202. The gate of N-channel MOS input transistor 202 is connected to ln₃
input node 204 and the gate of R-channel MOS current-limiting transistor 200 is connected
to node 192. The input section for ln
(n) comprises P-channel MOS current-limiting transistor 206 having its source connected
to VDD and its drain connected to the drain of N-channel MOS input transistor 208.
The gate of N-channel MOS input transistor 208 is connected to ln
(n) input node 210 and the gate of N-channel MOS current-limiting transistor 206 is connected
to node 192. The sources of N-channel MOS input transistors 188, 196, 202, and 208
are connected together to the drain of N-channel MOS bias transistor 182. The output
of maximum detector circuit 54 is node 212 at the common connection of the drain of
N-channel bias transistor 182 and the sources of the N-channel input transistors.
[0106] The maximum detector circuit 54 acts analogously to the minimum detector circuit
46. The difference is that an N-channel bias transistor is used instead of a P-channel
bias transistor and an N-channel transconductance amplifier is used in place of a
P-channel transconductance amplifier. The result is the output will now track approximately
an N-channel bias drop below the largest input (in non-averaging mode), since that
much difference is needed to guarantee at least one input pair is on (186/188, 194/196,
... 206/208).
[0107] However for this circuit the output is not used for feedback, but is instead used
to drive a comparator 56 (FIG. 2) which is set to trip if the input is greater than
the voltage V
Thmax. If tripped, a MAX INTERRUPT signal is generated. The MAX INTERRUPT is used to "wake-up"
a microprocessor and tell it that there is an object detected at the sensor. The signal
is prevented from appearing on the MAX INTERRUPT line by gate AND gate 60 and the
SAMPLE signal. The SAMPLE signal only allows the interrupt signal to pass after the
circuit has settled completely. As shown in FIG. 2 by OR gate 58, either the X or
the Y dimension maximum detector circuit may be used to enable the MAX INTERRUPT signal.
[0108] Referring now to FIG. 10, a presently preferred embodiment of linear voltage-to-current
circuit 36 is shown in schematic form. In the presently preferred embodiment of the
invention, block 36 in FIG. 2 actually contains one voltage to current converter circuit
of FIG. 10 for each output of an integrating charge amplifier.
[0109] In the circuit of FIG. 10, a current mirror comprises diode-connected P-channel MOS
transistor 222 having its source connected to voltage source V
DD, and P-channel MOS transistor 224 having its source connected to voltage source V
DD and its gate connected to the gate and drain of transistor 222. An N-channel MOS
input transistor 226 has its drain connected to the drain of P-channel transistor
222, its gate connected to a voltage input node 228, and its source connected to the
drain of N-channel bias transistor 230. The source of N-channel bias transistor 230
is connected to ground and its gate is connected to bias input 232. The drain of P-channel
MOS transistor 224 is connected to the gate and drain of diode connected N-channel
MOS transistor 234. The source of diode connected N-channel MOS transistor 234 is
connected to ground. The common gate and drain connection of diode- connected N-channel
MOS transistor 234 is an N Bias current output node 236 and the common connection
of the gate of P-channel MOS transistor 224 and the drain of P-channel MOS transistor
222 is a P Bias current output node 236 of the voltage-to-current-converter.
[0110] To generate a linear transformation N-channei MOS bias transistor 230 is biased in
it's linear region by setting V
BIAS to be a value which is much greater than the largest value expected on the voltage
input node 228. This will guarantee it is always operating in its linear region. For
this invention the voltage to be expected at the voltage input 228 of the voltage-to-current
converter circuit is typically less than half of the power supply, so it will operate
linearly if V
BIAS is set to the power supply or greater.
[0111] The transconductance of N-channel input transistor 226 is designed to be as large
as reasonable. The result is that N-channel input transistor 226 will operate like
a follower with a resistor in it's source, and hence will give a linear change of
output current versus a linear change in input voltage.
[0112] The current is sourced by diode-connected P-channel MOS transistor 222 which acts
as half of a CMOS P-channel current mirror and provides a reference for P Bias Output
node 236 for the position encoder circuit. The current is mirrored thru P-channel
MOS transistor 224 and diode connected MOS transistor 232 generating a reference at
N Bias Output node 238 for the position encoder circuit.
[0113] For the purposes of this embodiment, a linear transfer function between voltage and
current has been selected. Those of ordinary skill in the art will recognize that,
under certain circumstances, a non-linear transfer function will be desired.
[0114] The linear voltage-to-current converter of FIG. 10 is disclosed in U.S. Patent No.
5,096,284 operating in the weak inverslon region.. This circuit is used in the strong
inversion region in the present invention, however, for certain applications, the
weak inversion mode may be preferred.
[0115] Referring now to FIG. 11, a presently preferred embodiment of a position encoder
circuit 38 of FIG. 2 is shown in schematic diagram form. The circuits in the X and
Y dimensions are identical. The position encoder circuit 38 is shown having six inputs,
but those of ordinary skill in the art will recognize that, due to its symmetry, it
may be arbitrarily expanded.
[0116] As presently preferred, position encoder circuit 38 includes a plurality of transconductance
amplifiers 242-1 through 242-6 connected as followers. The outputs of all amplifiers
242-1 through 242-6 are connected together to a common node 244, which comprises the
output node of the circuit.
[0117] The non-inverting inputs of amplifiers 242-1 through 242-6 are connected to a resistive
voltage divider network comprising resistors 246, 248, 250, 252, 254, 256, and 258,
shown connected between V
DD and ground.
[0118] Amplifiers 242-1 through 242-3 have P-channel bias transistors and differential pair
inputs due to the input operating range between zero volts and V
DD/2, and amplifiers 242-4 through 242-6 have N-channel bias transistors and differential
pair inputs due to the input operating range between V
DD/2 and V
DD. Those of ordinary skill in the art will readily recognize that amplifiers 242-4
through 242-6 will be conflgured exactly like amplifiers 242-1 through 242-3, except
that all transistor and supply voltage polarities are reversed. The input nodes l
ln1 through l
ln6 (reference numerals 260, 262, 264, 266, 268, and 270) of the circuit are connected
to the gates of the bias transistors of the transconductance amplifiers 242-1 through
242-6, respectively. The inputs l
ln1 through l
ln3 are driven by the P Bias output nodes 236 of their respective linear voltage-to-current
converters and the inputs l
ln4 through l
ln6 are driven by the N Bias output nodes 238 of their respective linear voltage-to-current
converters.
[0119] The position encoder circuit of FIG. 11 will provide a weighted mean (centroid) of
the input currents weighted by the voltages on the reslstor divider circuit to which
the Inputs of the amplifiers are connected. If the resistors 246, 248, 250, 252, 254,
256, and 258 are all equal then the result is a circuit which is a linear position
encoder, with its output voltage varying between the power supply rails. Because it
is a weighted mean, it averages all current inputs which in turn generates an interpolated
output. This arrangement affords finer resolution than the voltage spacing of voltage
nodes "n" at the input. This is key to making a dense circuit function. This circuit
is an improvement of a circuit described in DeWeerth, Stephen P., Analog VLSI Circuits
For Sensorimotor Feedback, Ph.D Thesis, California Institute of Technology, 1991.
[0120] Referring now to FIG. 12, a presently preferred embodiment of a Z Sum circuit 62
of FIG. 2 is shown. For purposes of illustration, Z Sum circuit 62 is shown to Include
four inputs. Those of ordinary skill in the art will readily understand how to provide
additional inputs.
[0121] The four input sections for the Z Sum circuit illustrated in FIG. 12 each comprise
two N-channel MOS transistors connected in series. Thus a first input section comprises
N-channel MOS input transistor 290, having its drain connected to the drain of P-channel
MOS bias transistor 282 and its source connected top the drain of N-channel MOS transistor
292. The gate of N-channel MOS input transistor 290 is connected to input node ln₁
at reference numeral 294. The gate of N-channel MOS bias transistor 292 is connected
to bias input node 296.
[0122] A second input section comprises N-channel MOS input transistor 298, having its drain
connected to the drain of P-channel MOS bias transistor 282 and its source connected
top the drain of N-channel MOS transistor 300. The gate of N-channel MOS input transistor
298 is connected to input node ln₂ at reference numeral 302. The gate of N-channel
MOS bias transistor 300 Is connected to bias input node 296.
[0123] A third input section comprises N-channel MOS input transistor 304, having its drain
connected to the drain of P-channel MOS bias transistor 282 and its source connected
top the drain of N-channel MOS transistor 306. The gate of N-channel MOS input transistor
304 is connected to input node ln₃ at reference numeral 308. The gate of N-channel
MOS bias transistor 306 is connected to bias Input node 296.
[0124] A fourth input section comprises N-channel MOS input transistor 310, having its drain
connected to the drain of P-channel MOS bias transistor 282 and its source connected
top the drain of N-channel MOS transistor 312. The gate of N-channel MOS input transistor
310 is connected to input node ln₄ at reference numeral 314. The gate of N-channel
MOS bias transistor 312 is connected to bias input node 296. The common drain connections
of N-channel MOS input transistors 290, 298, 304, and 310 are connected to the gate
of P-channel MOS transistor 316.
[0125] The Z sum circuit FIG. 12 is analogous to the Linear voltage-to-current converter
circuit 36 of FIG. 10. However in this case there are multiple circuit sections which
have their currents all summed together (transistors 290/292, 298/300, 304/306, ...
310/312) into the P-channel MOS transistor 282.
[0126] P-channel MOS transistors 282 and 316 form a current mirror. Their sources are connected
to voltage source V
DD and their gates are connected together to the drain P-channel MOS of transistor 282.
The drain of P-channel MOS transistor 316 is connected to the drain of N-channel MOS
transistor 318, which has its source connected to ground. The common connection of
the drains of MOS transistors 316 and 318 forms a voltage output node 288 for the
circuit.
[0127] MOS transistor 316 drives MOS transistor 318 which is operating in its linear region.
The result is a voltage which is proportional to the current from transistor 316.
Therefore the voltage at voltage output node 320 is a scaled sum of all the input
voltages, and is utilized by the multiplier circuit.
[0128] Referring now to FIG. 13, a presently preferred embodiment of the multiplier circuit
64 of FIG. 2 is presented in schematic form. P-channel MOS transistors 332 and 334
form a current mirror. N-channel MOS transistor 336 has its drain connected to the
drain of P-channel MOS transistor 332, its gate connected to first voltage input node
338, and its source connected to the drain of N-channel MOS transistor 340. The gate
of N-channel MOS transistor 340 Is connected to second voltage input node 342 and
its source is connected to ground. N-channel MOS transistor 344 has its drain connected
to the gate and drain of P-channel MOS transistor 332. The gate of N-channel MOS transistor
344 is connected to second voltage input node 342 and its source is connected to the
drain of N-channel MOS transistor 346. The gate of N-channel MOS transistor 346 is
connected to first voltage input node 338 and its source is connected to ground. The
sources of P-channel MOS transistors 332 and 334 are connected to voltage source V
DD. The drain of P-channel MOS transistor 334 is connected to output node 348 and to
the drain of N-channel MOS transistor 350. The gate of N-channel MOS transistor 350
is connected to Input bias node 352.
[0129] The multiplier circuit of FIG. 13 is a symmetrized extension of the multiplier described
in U.S. Patent 5,095,284 and is a wide input range, voltage-input, voltage-output
multiplier circuit. Because of the symmetrical input stage, the multiplier can be
operated both above and below the threshold voltages of transistors 340 and 346.
[0130] The currents from the two transistor pairs 336/340 and 344/346 are summed into the
current mirror of transistors 332 and 334 and appear at the drain of transistor 334.
Transistor 350 is biased to be in its linear region by bias input 352. Therefore,
the output voltage at output node 348 will be proportional to the conductance of device
350 multiplied by the current driven by device 334. The bias voltage at input 352
is adjusted to scale the range of Vout values at node 348 and, once set, is left constant.
Thereafter, the output voltage is proportional to the current injected from device
334, and hence is proportional to the product of the two input voltages at input nodes
338 and 342.
[0131] According to another aspect of the present Invention, a position matrix sensing system
is disclosed herein. The position matrix embodiment of the present invention is a
straightforward extension of the finger position invention and uses much the same
circuitry and basic signal flow. The main differences are in the measurement technique
and the amount of information stored. The goal is to provide a matrix of voltages,
V(x,y), that represent the proximity of the object to every node (x,y) on the sensor
matrix. Instead of using this sel of voltages to drive position encoders in the X
and Y dimensions separately, as In the finger position embodiment, the information
is instead sent to the input of a neural network circuit, which uses this multi-dimensional
information to help it make decisions about what the input means.
[0132] In the finger position embodiment, the driving-point capacitance information is used
for position detection. However, because the driving-point capacitance looks at the
total capacltive effect on the node being measured, it is incapable of resolving what
is happening at each X and Y location on the sensor.
[0133] The position matrix embodiment of the present invention has the capability of resolving
the capacitive effect at each X and Y location of the sensor. In this embodiment the
driving-point capacitance circuit is only used to inject charge into the X matrix
node. The trans-capacitance (i.e., the capacitance between a selected X node and a
selected Y node in the sensor matrix) causes some of that charge to in turn be injected
into a Y node. This injected charge is measured by the charge-sensitive amplifier
connected to the Y node, thus forming a receiving-point capacitance circuit.
[0134] Referring now to FIG. 14, a presently preferred combination driving-point capacitance
circuit and receiving-point capacitance circuit is shown in schematic diagram form.
A representative X node X
(n) at reference numeral 14 and a selected Y node Y
(n) at reference numeral 18, are shown each having a self capacitance C
X and C
Y, respectively. Transcapacitance between nodes X
(n) Y
(n) is represented by capacitor C
XY.
[0135] A driving-point capacitance measurement is made of row line X
(n) by a circuit which, as shown, may be one of the integrating charge amplifier circuits
of either FIG. 6a or FIG. 7a, equipped with switches to zero out the matrix prior
to injecting charge onto the matrix. The output of this circuit need not be used for
anything. After the driving-point measurement has been made for a particular X line,
charge is injected into all of the Y receiving-point impedance measuring circuits
(the integrating charge amplifier). If all Y outputs are monitored simultaneously
then for one X node, a profile of all the trans-capacitive effects at all the Y nodes
that cross it will be created as a set of voltages V(x,1), V(x,2), ... V(x,m) that
are a profile of the object (or objects) proximity on that X node. This sequence is
done for every X node in the matrix resulting in a complete matrix of voltages whose
values are proportional to the proximity of nearby objects.
[0136] As shown in FIG. 14, the receiving-point circuit can be an integrating charge amplifier
identical to that used in the driving-point circuit. However, there are three differences
in the way that the Y receiving circuit is used. First, the V
STEP node is left at a constant voltage, V
LOW, by disabling the STEP input such that switch 112 (FIGS. 6a and 7a) is always on
and switch 110 is always off. Second, the Y receiving circuits are not individually
selected, but instead are all selected simultaneously. Hence, there is only one Y
select line for all Y Inputs. Third, the RESET1 line is not used in the receiving-point
circuit, and switch 106 (FIGS. 6a and 7a) is always off. These circuits will give
an output voltage which is proportional to the amount of charge injected onto the
Y node. Since the trans-capacitance varies with the proximity of an object, the voltage
is proportional to the proximity of an object.
[0137] The position matrix embodiment requires storage of all of the output signals from
the receiving-point impedance circuits in both the X and Y directions. This may be
a accomplished by providing a sample/hold circuit matrix or a charge-coupled device
(CCD) array as is known in the art. The structure of an illustrative sample/hold matrix
is disclosed in FIG. 15, which shows a portion of a sample/hold array 350 suitable
for use in the present invention. The array 350 is arranged as a plurality of rows
and columns of individual sample/hold circuits. The number of rows is equal to the
number of Y positions in the sensor matrix and the number of columns is equal to the
number of X positions in the sensor matrix. For example, a 15x15 sensor matrix requires
15 rows and 15 columns. All of the voltage data inputs in a row are wired together
and the sample/hold control inputs of all the sample/hold circuits in a column are
connected to one of the select signals (FIG. 5) such that the select inputs from the
X direction drive the sample/hold circuits in the matrix storing the Y data. Those
of ordinary skill in the art will note that the roles of X and Y may be reversed.
[0138] Referring now to FIGS. 16a and 16b two possible embodiments of the position matrix
system of the present invention are illustrated. In the simplest embodiment, the matrix
of voltage information is sent to a computer which processes the data. This simple
embodiment is shown in FIG. 16a. The approach of FIG. 16a is feasible if the input
profile shapes change no faster than about every millisecond.
[0139] In the embodiment of position matrix system (reference numeral 360) illustrated in
FIG. 16a, the X dimension integrating charge amplifiers (reference numerals 362-1
through 362-n) are used to perform the driving-point capacitance measurements disclosed
herein for all X lines in the matrix. For each X line driven, the Y dimension integrating
charge amplifiers (reference numerals 364-1 through 364-n) are used to perform the
receiving-point capacitance measurements disclosed herein. The sample/hold matrix
of FIG. 15 is not required. Instead, one sample/hold amplifier (366-1 through 366-n)
is required per Y output to sample the output voltages from the Y dimension integrating
charge amplifiers 364-1 through 364-n at the end of each X select period.
[0140] These outputs are digitized by A/D converters 368-1 through 368-n respectively. In
the illustrative embodiment of FIG. 16a, the digital resolution will be of the order
of 8 bits. The 8-bit data words from each A/D converter 368-1 through 368-n are multiplexed
down to a bus width that is more easily handled by a computer by multiplexer 370.
Multiplexer 370 is a conventional multiplexer device known to those of ordinary skill
in the art. The output of multiplexer 370 is presented to a computer which may then
process the data in an appropriate manner.
[0141] A second illustrative embodiment of position matrix system (reference numeral 380)
is shown in FIG. 16b. As in the embodiment of FIG. 16a, the X dimension integrating
charge amplifiers (reference numerals 362-1 through 362-n) are used to perform the
driving-point capacitance measurements disclosed herein for all X lines in the matrix.
For each X line driven, the Y dimension integrating charge amplifiers (reference numerals
364-1 through 364-n) are used to perform the receiving-point capacitance measurements
disclosed herein.
[0142] The sample/hold array 350 of FIG. 15 is employed and describes the extraction of
derivation of the n by m array of voltages applications (V(1,1) to V(n,m)). These
voltages are then sent to the input of a single or multiple level neural network 382.
Each input neuron will have to have n*m input nodes to support the full size of the
sensor array voltage matrix V(n,m).
[0143] An example of a single level neural network array circuitry 382, including the pre-processing
and sample/hold circuitry 350 required, is disclosed in U.S. Patent No. 5,083,044.
This circuit could be used as is or could be replicated and built into two or three
layers giving more power and functionality. These variations and many others are well
described in the literature, such as Hertz, Krogh, and Palmer, A Lecture Notes Volume
in the Santa Fe Institute Studies in the Sciences of Complexity, Allen M. Wilde, Publ.
(1991).
[0144] The typical application of this embodiment would require a neural network or computer
program that at the primitive level can discern objects (finger touch points). This
is the basic symbol, the presence of a finger, that is manipulated. From that point
there may be predetermined gestures that the system looks for which indicate action.
Motion may also need to be detected. A possible solution for this may be found in
Mead, Analog VLSI and Neural Systems, Addison-Wesley (1989), Chapter 14, Optical Motion
Sensor.
[0145] Because of the unique physical features of the present invention, there are several
ergonomically interesting applications that were not previously possible. Presently
a Mouse or Trackball is not physically convenient to use on portable computers. The
present invention provides a very convenient and easy-to-use cursor position solution
that replaces those devices.
[0146] In mouse-type applications, the sensor of the present invention may be placed in
a convenient location, e.g., below the "space bar" key in a portable computer. When
placed in this location, the thumb of the user may be ysed as the position pointer
on the sensor to control the cursor position on the computer screen. The cursor may
then be moved without the need for the user's fingers to leave the keyboard. Ergonomically,
this is similar to the concept of the Macintosh Power Book with it's trackball, however
the present invention provides a significant advantage in size over the track ball.
Extensions of this basic idea are possible in that two sensors could be placed below
the "space bar" key for even more feature control.
[0147] The computer display with it's cursor feedback is one small example of a very general
area of application where a display could be a field of lights or LED's, a LCD display,
or a CRT. Examples include touch controls on laboratory equipment where present equipment
uses a knob/button/touch screen combination. Because of the articulating ability of
this interface, one or more of those inputs could be combined into one of our inputs.
[0148] Consumer Electronic Equipment (stereos, graphic equalizers, mixers) applications
often utilize significant front panel surface area for slide potentlometers because
variable control is needed. The present invention can provide such control in one
small touch pad location. As Electronic Home Systems become more common, denser and
more powerful human interface is needed. The sensor technology of the present invention
permits a very dense control panel. Hand Held TV/VCR/Stereo controls could be ergonomically
formed and allow.for more powerful features if this sensor technology is used.
[0149] The sensor of the present invention can be conformed to any surface and can be made
to detect multiple touching points, making possible a more powerful joystick. The
unique pressure detection ability of the sensor technology of the present invention
is also key to this application. Computer games, "remote" controls (hobby electronics,
planes) , and machine tool controls are a few examples of applications which would
benefit from the sensor technology of the present invention.
[0150] Musical keyboards (synthesizers, electric planos) require velocity sensitive keys
which can be provided by the pressure sensing ability of this sensor. There are also
pitch bending controls, and other slide switches that could be replaced with this
technology. An even more unique application comprises a musical instrument that creates
notes as a function of the position and pressure of the hands and fingers in a very
articulate 3-d interface.
[0151] The sensor technology of the present invention can best detect any conducting material
pressing against it. By adding a conductive foam material on top of the sensor the
sensor of the present invention may also indirectly detect pressure from any object
being handled, regardless of its electrical conductivity.
[0152] Because of the amount of information available from this sensor it will serve very
well as an input device to virtual reality machines. It is easy to envision a construction
that allows position-monitoring in three dimensions and some degree of response (pressure)
to actions.
[0153] While embodiments and applications of this invention have been shown and described,
it would be apparent to those skilled in the art that many more modifications than
mentioned above are possible without departing from the inventive concepts herein.
The invention, therefore, is not to be restricted except in the spirit of the appended
claims.
1. An object proximity sensor, including:
a plurality of spaced-apart conductive sensor pads disposed in a matrix of rows
and columns on a first face of a substrate;
a plurality of row conductive lines disposed on said substrate and generally aligned
with said rows, each of said row conductive lines electrically contacting certain
ones of said sensor pads in one of said rows;
a plurality of column conductive lines disposed on said substrate, insulated from
said row conductors and generally aligned with said columns, each of said column conductive
lines electrically contacting the ones of said sensor pads in one of said columns
which are not contacted by said row conductive lines;
capacitance-sensing means for sensing the capacitance of each of said row conductive
lines and the capacitance of each of said column conductive lines in the presence
of an object to be sensed and for producing a set of object-sensed electrical signals
related thereto.
2. The object proximity sensor of claim 1 wherein said row conductive lines are disposed
on said first face of said substrate and said column conductive lines are disposed
on a second face of said substrate opposite said first face.
3. The object proximity sensor of claim 1, wherein said capacitance-sensing means comprises
means for injecting a step voltage onto each of said row conductive lines and said
column conductive lines, and means for sensing the charge required to inject said
step voltage onto each of said row conductive lines and said column conductive lines.
4. The object proximity sensor of claim 3, further including:
means for sensing a no-object-present capacitance of each of said row conductive
lines and sensing a no-object-present capacitance of each of said column conductive
lines, for producing a set of no-object-present electrical signals related thereto;
and
means for subtracting said set of no-object-present electrical signals from said
set of object-sensed electrical signals.
5. The object proximity sensor of claim 4 wherein said means for producing a set of no-object-present
electrical signals related to said no-object-present capacitance of each of said row
conductive lines and said no-object-present capacitance of each of said column conductive
lines comprises means for computing weighted minima of said object-sensed electrical
signals thereof.
6. An object proximity sensor, including:
a plurality of spaced-apart conductive sensor pads disposed in a matrix of rows
and columns on a first side of a substrate;
a plurality of row conductive lines disposed on said substrate and generally aligned
with said rows, each of said row conductive lines electrically contacting certain
ones of said sensor pads in one of said rows;
a plurality of column conductive lines disposed on said substrate, insulated from
said row conductive lines and generally aligned with said columns, each of said column
conductive lines electrically contacting the ones of said sensor pads in one of said
columns which are not contacted by said row conductive lines;
capacitance-sensing means for sensing the capacitance between each of said row
conductive lines and each of said column conductive lines in the presence of an object
to be sensed and for producing set of object-sensed electrical signals related thereto.
7. The object proximity sensor of claim 6 wherein said row conductive lines are disposed
on said first face of said substrate and said column conductive lines are disposed
on a second face of said substrate opposite said first face.
8. The object proximity sensor of claim 6, wherein said capacitance-sensing means comprises
means for injecting a step voltage onto each of said row conductive lines, and means
for sensing the charge injected onto each of said column conductive lines by said
step voltage.
9. The object proximity sensor of claim 6, further including:
means for sensing a no-object-present capacitance of each intersection of one of
said row conductive lines and one of said column conductive lines, for producing a
set of no-object-present electrical signals related thereto; and
means for subtracting said set of no-object-present electrical signals from said
set of object-sensed electrical signals.
10. The object proximity sensor of claim 9 wherein said means for producing a set of no-object-present
electrical signals related to said no-object-present capacitance of each of said row
conductive lines and said no-object-present capacitance of each of said column conductive
lines comprises means for computing weighted minima of said object-sensed electrical
signals thereof.
11. An object proximity sensor, including:
a plurality of spaced-apart conductive sensor pads disposed in a plurality of rows
on a first side of a substrate, the ones of said sensor pads in odd numbered ones
of said rows disposed along a first set of column positions and the ones of said sensor
pads in even numbered ones of said rows disposed at a second set of column positions
offset from said first set of column positions such that said sensor pads form a repetitive
diamond pattern;
a plurality of row conductive lines disposed on said substrate and generally aligned
with said rows, each of said row conductive lines electrically contacting every one
of said sensor pads in one of said odd-numbered rows;
a plurality of column conductive lines disposed on said substrate, insulated from
said row conductive lines and generally aligned with said offset column positions,
each of said column conductive lines electrically contacting through said substrate
the ones of said sensor pads in one of said offset column positions;
capacitance-sensing means for sensing the capacitance of each of said row conductive
lines and the capacitance of each of said column conductive lines in the presence
of an object to be sensed and for producing a set of object-sensed electrical signals
related thereto.
12. The object proximity sensor of claim 11 wherein said row conductive lines are disposed
on said first face of said substrate and said column conductive lines are disposed
on a second face of said substrate opposite said first face.
13. The object proximity sensor of claim 11, wherein said capacitance-sensing means comprises
means for injecting a step voltage onto each of said row conductive lines and said
column conductive lines, and means for sensing the charge required to inject said
step voltage onto each of said row conductive lines and said column conductive lines.
14. The object proximity sensor of claim 11, further including:
means for sensing a no-object-present capacitance of each of said row conductive
lines and sensing a no-object-present capacitance of each of said column conductive
lines, for producing a set of no-object-present electrical signals related thereto;
and
means for subtracting said set of no-object-present electrical signals from said
set of object-sensed electrical signals.
15. The object proximity sensor of claim 14 wherein said means for producing a set of
no-object-present electrical signals related to said no-object-present capacitance
of each of said row conductive lines and said no-object-present capacitance of each
of said column conductive lines comprises means for computing weighted minimums of
said object-sensed electrical signals thereof.
16. An object proximity sensor, including:
a plurality of spaced-apart conductive sensor pads disposed in a plurality of rows
on a first side of a substrate, the ones of said sensor pads in odd numbered ones
of said rows disposed along a first set of column positions and the ones of said sensor
pads in even numbered ones of said rows disposed at a second set of column positions
offset from said first set of column positions and said rows spaced apart such that
said sensor pads form a closely packed repetitive pattern wherein each pad is not
in contact with adjoining pads;
a plurality of row conductive lines disposed on said substrate and generally aligned
with said rows, each of said row conductive lines electrically contacting every one
of said sensor pads in one of said odd-numbered rows;
a plurality of column conductive lines disposed on said substrate, insulated from
said row conductive lines and generally aligned with said offset column positions,
each of said column conductive lines electrically contacting the ones of said sensor
pads in one of said offset column positions;
capacitance-sensing means for sensing the capacitance between each of said row
conductive lines and each of said column conductive lines in the presence of an object
to be sensed and for producing set of object-sensed electrical signals related thereto.
17. The object proximity sensor of claim 16 wherein said row conductive lines are disposed
on said first face of said substrate and said column conductive lines are disposed
on a second face of said substrate opposite said first face.
18. The object proximity sensor of claim 16, wherein said capacitance-sensing means comprises
means for injecting a step voltage onto each of said row conductive lines, and means
for sensing on each of said column conductive lines the charge injected thereinto
by said step voltage onto each of said row conductive lines.
19. The object proximity sensor of claim 16, further including:
means for sensing a no-object-present capacitance of each intersection of one of
said row conductive lines and one of said column conductive lines, for producing a
set of no-object-present electrical signals related thereto; and
means for subtracting said set of no-object-present electrical signals from said
set of object-sensed electrical signals.
20. The object proximity sensor of claim 19 wherein said means for producing a set of
no-object-present electrical signals related to said no-object-present capacitance
of each of said row conductive lines and said no-object-present capacitance of each
of said column conductive lines comprises means for computing weighted minimums of
said object-sensed electrical signals thereof.
21. A method for providing an electrical signal representative of the position of an object
in a two dimensional plane, including the steps of:
providing a sensing plane including a matrix of conductors arranged as a plurality
of rows and columns of spaced apart conductors, said sensing plane characterized by
an inherent capacitance between the various ones of said row and column conductors,
said capacitance varying with the proximity of an object to said row and column conductors;
developing for each conductor in both the row and column dimensions a first electrical
signal proportional to the value of said capacitance when no object is located proximate
to said sensing plane;
developing for each conductor in both the row and column dimensions a second electrical
signal proportional to the value of said capacitance when an object is located proximate
to said sensing plane; and
encoding said set of row electrical signals and said set of column electrical signals
into electrical signals indicating the position of said object in said row dimension
and said column dimension.
22. The method of claim 21, further including the step of subtracting said first electrical
signal from said second electrical signal for each conductor to form a set of row
and a set of column electrical signals defining a profile of the proximity of said
object in both said row and column dimensions.
23. The method of claim 21 further including the step of processing said set of row electrical
signals and said set of column electrical signals to create an area electrical signal
proportional to the area of proximity of said object to said processing plane.
24. The method of claim 21 wherein the step of encoding said set of row electrical signals
and said set of column electrical signals into electrical signals indicating the position
of said object in said row dimension and said column dimension comprises separately
encoding said set of row electrical signals into a first digital signal and encoding
said set of column electrical signals into a second digital signal.
25. The method of claim 24 wherein the step of encoding said set of row electrical signals
and said set of column electrical signals into electrical signals indicating the position
of said object in said row dimension and said column dimension comprises separately
encoding said set of row electrical signals into a first digital signal and encoding
said set of column electrical signals into a second digital signal, and further including
the step of encoding said area electrical signal into a third digital signal.
26. The method of claim 21 further including the step of providing a signal when said
first electrical signal for any of said row or column conductors exceeds a predetermined
threshold.