METHOD AND APPARATUS FOR DOPING SILICON WAFERS USING A SOLID DOPANT SOURCE AND RAPID THERMAL PROCESSING - Patent 0588792

(19)

(11)

EP 0 588 792 A1

(12)

(43)	Date of publication:
	30.03.1994 Bulletin 1994/13

(21)	Application number: 91920043.0

(22)	Date of filing: 02.10.1991

(51)

International Patent Classification (IPC):

H01L 21/ 225^{( . )}
H01L 21/ 22^{( . )}
H01L 21/ 26^{( . )}
H01L 21/ 324^{( . )}

H01L 21/ 00^{( . )}
H01L 21/ 223^{( . )}
H01L 21/ 268^{( . )}

(86)	International application number:
	PCT/US1991/007333

(87)	International publication number:
	WO 1992/005896 (16.04.1992 Gazette 1992/09)

(84)	Designated Contracting States:
	DE FR GB NL

(30)

Priority:

02.10.1990 US 19900591791

(71)	Applicants:
	UNIVERSTITY OF HOUSTON SYSTEM Houston, Texas 77240 (US) WOLFE, John C. Houston, TX 77096 (US) ZAGOZDZON-WOSIK, Wanda Houston, TX 77081 (US)

(72)	Inventors:
	WOLFE, John, C. Houston, TX 77096 (US) ZAGOZDZON-WOSIK, Wanda Houston, TX 77081 (US)

(74)	Representative: Salgo, Reinhold Caspar, Dr., et al
	Patentanwalt Toebelistrasse 88 CH-8635 Duernten CH-8635 Duernten (CH)

(54)	METHOD AND APPARATUS FOR DOPING SILICON WAFERS USING A SOLID DOPANT SOURCE AND RAPID THERMAL PROCESSING