(19)
(11) EP 0 591 869 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
19.10.1994 Bulletin 1994/42

(43) Date of publication A2:
13.04.1994 Bulletin 1994/15

(21) Application number: 93115916.4

(22) Date of filing: 01.10.1993
(51) International Patent Classification (IPC)5: G11C 16/06
(84) Designated Contracting States:
DE FR GB NL

(30) Priority: 01.10.1992 JP 263752/92

(71) Applicant: NEC CORPORATION
Tokyo (JP)

(72) Inventor:
  • Watanabe, Kazuo, c/o NEC Corporation
    Tokyo (JP)

(74) Representative: Betten & Resch 
Reichenbachstrasse 19
80469 München
80469 München (DE)


(56) References cited: : 
   
       


    (54) Non-volatile semiconductor memory device


    (57) A non-volatile semiconductor memory device includes a sense amplifier (6) for detecting and outputting data of a memory cell comprising a non-volatile transistor (MO1, MO2), latch circuit (20) responsive to a latch signal for latching an output of the sense amplifier and inhibition means (10) responsive to a latch inhibition signal for inhibiting a latching operation of the latch circuit.
    With this construction of the memory device, correct data in the memory cell can be read without influence of noise in a circuit portion by detecting a verify mode automatically and monitoring a variation of a signal DO without using the latch circuit.






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