Compact, high current crossed-field plasma switch

Description

[0001] The present invention relates to a plasma switch comprising a vacuum housing, a generally cylindrical cold cathode within said housing providing a source of secondary electrons, the interior surface of said cathode comprising corrugations that project inward from an outer base surface, a generally cylindrical anode disposed coaxially inward of the cathode and having, preferably, a diameter less than half the diameter of said cathode base surface, a generally cylindrical source grid coaxially disposed between said anode and cathode, means for introducing an ionizable gas into the space between the cathode and source grid, said cathode and source grid maintaining a plasma therebetween in response to a predetermined voltage differential between them, a generally cylindrical control grid disposed between said source grid and anode for selectively enabling a plasma path between the cathode and anode, and thereby closing the switch, in response to a control voltage signal applied to the control grid, and magnet means for producing a magnetic field that extends into the area between the cathode and source grid and, in cooperation with a predetermined voltage differential between said cathode andd source grid, causes secondary electrons from said cathode to follow cycloidal orbits in said area.

[0002] Such a plasma switch is known from US-A-5,019,752.

[0003] The invention relates, in general, to grid-modulated plasma switches, generally referred to as "CROSSATRON" switches, and to the operation of such switches at current levels of 10 kA or greater.

[0004] CROSSATRON switches are grid-modulated plasma switches capable of fast closing speeds like a thyratron, and of rapid opening like a vacuum tube. A sequence of CROSSATRON designs are shown in documents US-A-4,247,804; 4,596,945; and 5,019,752.

[0005] The principles of operation of a CROSSATRON switch are illustrated in Fig. 1. The switch is a hydrogen plasma device having four coaxial, cylindrical electrodes 4, 10, 12, 14 disposed around a center axis 2. The outermost electrode 4 is the cathode, which is surrounded by an axially periodic permanent magnet stack 6 to produce a localized, cusp magnetic field 8 near the cathode surface. The innermost electrode 10 functions as an anode, while the next outer electrode 12 is a control grid and the third outer electrode 14 is a source grid.

[0006] Secondary electrons produced at the surface of cathode 4 are trapped in the magnetic field 8, and travel in cycloidal ExB orbits (where E is the electric field and B is the magnetic field) around the cylindrical anode 10 due to the radial electric field and the axial component of the magnetic field 8. The electrons eventually lose their energy via collisions, and are collected by the anode 10 or grids 12, 14. The long path length of the electrons near the surface of cathode 4 enhances ionization of the hydrogen background gas, and reduces the pressure at which the switch operates (compared to thyratrons). The hydrogen pressure in the switch can range from 100 to 1,000 microns (1 micron = 0.1333 Pascal), depending upon the gap spacing between the electrodes 4, 10, 12, 14 and the voltage level. The material of cathode 4 is typically molybdenum, and no heater power is required for cathode 4.

[0007] The source grid 14 is used to minimize turn-on jitter by maintaining a low level (typically less than 20 mA) DC discharge to the cathode 4, while the control grid 12 is normally held within about 1 kV of the cathode potential. When open, the high voltage in the switch is sustained across the gap between the control grid 12 and the anode 10. The switch is closed by pulsing the control grid 12 to a voltage potential above that of the cathode 4, thereby building up the density of a plasma 16 so that it diffuses into the gap between the control grid 12 and the anode 10. The result is a low impedance conduction path between the cathode 4 and anode 10, and a consequent closing of the switch. A high density plasma can be established in the switch, and the rate of current rise to the anode 10 can be increased by pre-pulsing the source grid 14 at about 1 microsecond before the closing voltage pulse is applied to the control grid 12.

[0008] The CROSSATRON switch was originally developed as a closing-only switch, as described in document US-A-4,247,804, but a modulator switch capable of high current interruption was also developed, as described in document US-A-4,596,945. Document US-A-5,019,752, mentioned above, discloses a switch having a cathode which was provided with a series of chromium-plated circular grooves or corrugations that extended around the cathode axis. The corrugations increased the effective cathode surface area exposed to the plasma, and thereby reduced the electron emission current density from the chrome surface to minimize arcing.

[0009] A different approach to the use of cathode corrugations was evaluated by the inventors of the present invention and was made the subject of earlier European patent application EP-A-0 574 933 filed June 17, 1993 and going back on U.S. priority S.N. 07/901,353 of June 19, 1992 (Article 54 (3) EPC). The cathode corrugations in this earlier approach extend axially, rather than circumferentially, as compared with document US-A-5,019,752, with the corrugation depths, however, being at least twice their widths. When used in connection with a deuterium gas fill, switching voltages greater than 100 kV and a peak closing current of 1 kA were achieved, as compared with a peak closing current of about 250 A with a more conventional flat cathode surface and hydrogen fill.

[0010] The current level achieved with the above switch was still not high enough to allow the switch to be used for laser discharge switching applications, such as those found in TE-CO₂ and excimer lasers. These applications require the switch to have a peak current capability of about 2.5-10 kA, and also a closing speed greater than 2x10¹⁰A/sec for CO₂ lasers and approximately 1x10¹¹A/sec for excimer lasers. At present, gas-discharge lasers utilize thyratrons, such as described in the textbook of Cobine, "Thyratron", McGraw-Hill Encyclopedia of Electronics and Computers, McGraw-Hill Inc., 1984, pages 855-856, and spark gaps. Since CROSSATRON switches have a much longer life than thyratron and spark-gap switches, plus similar fast closing speeds and much higher pulse-repetition-frequencies, it would desirable to use CROSSATRON switches for gas laser systems. However, currently available CROSSATRON switches are limited to peak currents of 3kA or less. Attempts have been made to increase the peak current level by increasing the cathode diameter, and thus the electron-emitting area; switches with a peak current capability in excess of 10kA have been achieved by using cathode diameters in excess of 25cm. Unfortunately, commercial lasers have a fixed diameter socket into which the switch must fit, and CROSSATRON switches with cathode diameters in excess of about 10cm cannot be accommodated. Therefore, although the high current CROSSATRON switches that have been developed exhibit a peak current capability that is sufficient for laser switching, in practice they are much too large to be used for laser applications.

[0011] The present invention as claimed seeks to provide an improved CROSSATRON plasma switch that is capable of reliably operating with peak currents up to 10kA or greater, with a switching speed suitable for excimer and CO₂ lasers, and yet is compact enough to fit within the switch socket of a conventional excimer or CO₂ laser.

[0012] This object is, achieved by a plasma switch, mentioned at the outlet, wherein said corrugations are extending generally axially and wherein the depths of said cathode corrugations are essentially less than 1.5 times the distance between said corrugations.

[0013] The object is, generally, achieved with a novel CROSSATRON switch design having a number of features that actually run counter to prior teachings, but which in combination make possible a compact switch with a very high peak current capability and switching rate. The cathode employs axially directed corrugations, but the corrugations are shallower, not deeper, and more smoothly rounded at the tips than those in the different approach mentioned above even though the switch's ultimate current carrying capability is higher. Contrary to the prior application in which the corrugation depths are at least twice the width between corrugations, in the present invention the corrugation depths are preferably between 1.0 and 1.5 times the distance between corrugations. The shallower corrugations make it possible to maximize the plasma volume to the range of 50-100cm³ in a small diameter switch, which in turn yields switching speeds of 10¹¹A/sec or better, while the rounded edges increase the current density capability before arcing occurs.

[0014] The available plasma volume is also enhanced by reducing the anode diameter significantly below the 6.4cm diameter previously used with a 10cm diameter cathode. While a lower limit to the anode diameter is imposed to prevent Paschen breakdown, it has been found that an anode diameter as small as 2.5cm can be used for an excimer laser, if combined with the other design features of the invention. An even smaller anode diameter of 1.25cm can be attained with the somewhat lower peak current required for a CO₂ laser. With an excimer laser the anode is preferably formed from the same material as the cathode, i.e., molybdenum. This counteracts an anode sputtering effect associated with a high negative anode voltage spike at the end of each excimer laser pulse that causes ion bombardment and sputtering of the anode.

[0015] The magnet design is also modified to achieve the high current density. To provide an adequate magnetic field B_z along the switch axis (greater than 300 Gauss (1 Gauss = 0.1 mT)) at the tips of the corrugations for confining the electrons and producing plasma, and yet keep the magnetic field strength low enough (less than 200 Gauss) in the gap between the anode and control grid to prevent significant plasma generation and switch latching, the magnets are both lengthened and increased in strength compared to prior CROSSATRON switches and moved further away from the control grid by increasing the cathode-to-control grid spacing. The magnets surrounding a 10cm diameter cathode are preferably about 2.5-3cm long in the axial direction, and have a surface strength of about 1.2-2.4kG. Also, only two stacked magnets are used to produce a single plasma ring in the switch, rather than multiple magnet layers and multiple plasma rings as in prior designs.

[0016] These and other features and advantages of the invention will be apparent to those skilled in the art from the following detailed description, taken together with the accompanying drawings.

FIG. 1 is a diagram illustrating the operation of a prior CROSSATRON switch, described above;

FIG. 2 is a sectional view of a CROSSATRON switch in accordance with the invention;

FIG. 3 is a sectional view of a preferred cathode configuration, taken normal to the cathode's axis;

FIG. 4 is a schematic diagram showing the switch used with a gas laser; and

FIG. 5 is a simplified plan view of a laser with a compact CROSSATRON switch in accordance with the invention positioned in the laser's switch socket.

[0017] A cross-section of a CROSSATRON switch that is constructed in accordance with the invention to provide a high peak current capability and a rapid switching speed is shown in FIG. 2. A vacuum housing 18 for the switch includes a generally cylindrical cathode 20 that encircles and is radially spaced outward from an anode cylinder 22. Axial corrugations on the cathode are described below in connection with FIG. 3. A source grid 24 and control grid 26 extend annularly around anode 22, inward from cathode 20. The cathode, anode and grids are arranged coaxially about a central axis 27. Electrical connectors 28, 30 and 32 are provided for the reservoir heater, source grid and control grid, respectively, while a cathode connection is made via a base flange 33. The anode 22 is mechanically suspended from a ceramic bushing 34, and is supplied with voltage signals via an electrical connector 36. An upper cathode extension 38, referred to as the Paschen shield, surrounds the upper portion of the anode to prevent the formation of a large gap between the anode and cathode that might otherwise result in Paschen breakdown. Permanent magnets 40 are positioned on the outer cathode wall. A hydrogen gas fill for the interior of the switch is provided from a reservoir 42.

[0018] For laser discharge applications, high peak currents (>2.5kA) at high current rate-of-rise (>2×10¹⁰A/sec) are required. This means that a high density plasma must be generated in the switch very reapidly, which in turn requires a high ionization rate. To the first order, the rate of ionization in the switch is directly proportional to both the neutral gas pressure in the switch and the switch volume where ionization can occur; this volume is considered to be the space between the cathode and source grid where primary electrons are confined. It has been discovered that compact, smaller volume switches require significantly higher gas pressures than do larger volume switches for the same current rise rates. With the described switch at voltages of about 40kV, however, in which the cathode diameter is preferably about 10cm, the hydrogen gas fill pressure is limited to about 600-700 microns (1 micron = 0.1333 Pascal) pressure by Paschen breakdown. Within this pressure regime it has been determined that a volume plasma of 50-100cm³ is required to achieve a 1×10¹¹A/sec switching rate as required by excimer lasers.

[0019] A unique cathode design has been developed that, together with the other features of the invention as claimed described herein, realizes the higher peak current capability potential of axially corrugated cathodes, and yet provides a greater plasma volume to enhance the switching rate. A sectional view showing the preferred cathode structure is presented in FIG. 3. The cathode 20 has a generally cylindrical shape, and is formed as a series of corrugations 44 that project inward towards the cathode axis. The corrugations extend axially (into the page as viewed in FIG. 3), and are preferably formed by folding a sheet of molybdenum into a corrugated structure and spot welding or brazing it to an outer hollow stainless steel support cylinder 46. The corrugations provide both a large cathode area, and a large plasma generation region in the spaces between corrugations. The inward end of the corrugations are fully rounded to prevent arcing.

[0020] The circulating electrons do not enter into the spaces between the corrugations 44, and accordingly the outer limit of the effective plasma volume is defined by the rounded ends of the corrugations. In accordance with the invention, the corrugations are made significantly shallower than in the earlier approach mentioned above, and yet the permissible current density before arcing begins with a hydrogen fill gas is increased to the order of 100A/cm², as opposed to the prior maximum current density with a deuterium gas fill of about 10A/cm². The depths of the corrugations 44 (their inward projection from the cathode base circumference 48 to the tips of the corrugations) are preferably between 1 and 1.5 times the distance between corrugations. For a 10cm diameter cathode the corrugations are preferably about 5-7mm deep and spaced about 4-6mm apart, with a cathode axial length of about 2.5-3cm; in a specific embodiment the corrugations were about 6mm deep, with a distance of about 4.8mm between adjacent corrugations and a cathode length of about 2.6cm. By thus making the corrugations shallower but still retaining a sufficient cathode area for high current operation, the effective plasma volume can be expanded to a level at which the switching rate required by excimer lasers is achieved, without having to extend the cathode's base diameter beyond the 10cm range that makes the switch mechanically compatible with a laser socket.

[0021] A new anode design is also provided to increase the plasma volume. As compared to an anode diameter of about 6cm for the prior CROSSATRON switch of the earlier approach mentioned above, it has been found that the anode can be reduced to about 2.5cm in diameter with a hydrogen pressure of 600-700 microns (1 micron = 0,1333 Pascal), a plasma-contacting axial length of 2cm (centered between the 2 magnet rows) to produce 10kA peak current. Reducing the anode 22 diameter allows the diameters of the source and control grids 24 and 26 to be similarly reduced, to about 3.6cm and 3.0cm respectively. The reduction in the source grid diameter, coupled with the shallower cathode corrugations, results in the necessary plasma volume for excimer laser switching. This approach of dimensional contraction is in direct contrast to the prior tendency to increase the switch size for greater current handling capability.

[0022] A lower limit on the permissible anode size is imposed by the need to retain a sufficient anode area to conduct the electron current density. Over half of the current in CROSSATRON switches is carried by plasma electrons flowing to the anode. For an excimer laser switch the minimum reliable anode diameter was found to be about 2.5cm. For the lower peak currents associated with CO₂ lasers, the anode diameter can be further reduced to about 1.25cm. This further reduction again increases the plasma volume (by permitting a reduction in the source and control grid diameters), and also allows for a significant material savings.

[0023] The anodes of prior CROSSATRON switches were typically constructed from copper or stainless steel, which provided good heat transfer characteristics, were easy to machine and were relatively inexpensive. However, as indicated above the prior CROSSATRON switches were not suitable for gas laser switching. In an under-damped excimer laser circuit, a large negative voltage spike of up to about 20kV hits the anode at the end of each pulse. This negative voltage spike attracts ions, which sputter the anode surface material onto the cathode and grids. However, since the cathode is typically formed from molybdenum rather than copper or stainless steel because of molybdenum's high current density capability, sputtering of the dissimilar anode material onto the cathode surface can result in arcing at the high operating levels contemplated by the invention. Accordingly, the switch anode is also formed from molybdenum for excimer laser applications, to inhibit such arcing. Molybdenum anodes have previously been used for vacuum tubes to prevent anode arcing and melting during faults, but there is no anode arcing problem with the CROSSATRON switch. Rather, molybdenum is employed for the anode in the excimer laser version of the invention because of its sputtering onto the cathode. Very little negative voltage is applied to the anode when the switch is used with a CO₂ laser, and stainless steel or copper anodes can sometimes be used for that application.

[0024] The magnets 40 are also specially designed so that plasma is produced at a very high rate for rapid switch closing. A relatively high magnetic field, preferably well in excess of 300 Gauss (1 Gauss = 0.1 mT) measured in the direction of the axis of the tube, is required at the inner edges of the corrugations to produce the high plasma density required by high current laser switches. However, if the magnetic field strength in the anode gap (the area between the anode and the control grid) is too high (greater than about 200 Gauss), the switch can unintentionally latch closed because plasma is generated by an ExB discharge in this region. The desired gradient in magnetic field strength is achieved with a unique combination of magnetic strength, axial dimension, radial spacing between the magnets and the grids, and number of magnets used.

[0025] The surface strength of the magnets 40 is increased to obtain a greater magnetic field strength at the tips of the cathode corrugations, and the length of the magnets parallel to the system axis is increased so that the magnetic field cusp extends further inward towards the system axis, and thus takes into account the smaller anode diameter employed in the invention. Specifically, as opposed to prior ceramic magnets of about 800 Gauss (1 Gauss = 0.1 mT) surface strength and about 2.2cm long, the invention employs magnets that have a surface strength of about 1.2-2.4kG and a length of approximately 2.5-3cm; in a demonstration, the actual magnetic surface strength was 1.67kG and the length was 2.5cm. Furthermore, in contrast to the prior practice of stacking three or more magnets, the present invention stacks only two magnets 40a and 40b to form the overall magnet structure 40. The prior use of three stacked magnets produced a double cusp in the magnetic field, as indicated in FIG. 1. However, it has been found that for current levels above lkA almost all of the plasma is pushed down by the ExB field to the lower cusp. Thus, since the uppermost of the three prior magnets does not significantly influence the plasma distribution when used at the high current levels contemplated by the invention, it is simply omitted.

[0026] FIG. 4 is a simplified schematic diagram showing the use of the new CROSSATRON switch 50 in a discharge circuit for a gas laser. The laser includes a discharge tube 52 that contains the gaseous lasing medium and defines a resonator cavity, a fully reflective mirror 54 at one end of the discharge tube, and a partially reflective mirror 56 at the other end of the tube. Anode and cathode plates 58 and 60 extend along opposite sides of the discharge chamber, out of the lasing path.

[0027] A self-regulating power supply 62 with a suitable laser discharge voltage capacity, such as 40kV, is connected through a charging resistor R1 and a saturable reactor L1 to charge a pulse storage capacitor C1. A discharge capacitor C2 and charging inductor L2 are connected in parallel with the laser cavity electrodes 58 and 60, between the far side of the pulse storage capacitor C1 and the switch cathode 50a. The switch anode 50b is connected between the charging resistor R1 and the saturable reactor L1. In operation, when the switch is open the power supply 62 charges the pulse storage capacitor C1 through the charging resistor R1 and saturable reactor L1. The charging inductor L2 has a low impedance on the charging time scale and completes the charging circuit. When the switch closes, it completes a two-capacitor ringing circuit for capacitors C1 and C2. The pulse storage capacitor C1 discharges into the discharge capacitor C2, and capacitor C2 in turn discharges very rapidly into the laser to produce a pumping action. The ringing circuit includes the saturable reactor L1, where the reactor's core saturates and its inductance drops when the closing current has built up to about 100A. The saturable reactor provides some impedance to the switch when it first closes, thereby eliminating a potential stalling problem, but after the initial portion of the closing cycle the reactor's inductance has dropped enough to allow rapid charging of the pulse storage capacitor C1. Although it presents a low impedance during the capacitor charging period, the charging inductor L2 appears essentially as an open circuit to the short discharge pulse from pulse storage capacitor C1, and thus does not interfere with the charging of discharge capacitor C2.

[0028] The operational circuitry for the switch 50 includes a power supply 64 that is connected through a resistor R2 to maintain a fairly low "keep alive" voltage on the source grid 50c, and another power supply 66 that provides a heating current to a heater 68 for the switch's gas reservoir. The control grid 50d is operated by a pulse from a control pulse capacitor C3, which is recharged by a power supply 70. A silicon controlled rectifier (SCR) 72 is triggered by a low voltage pulse applied to its control terminal 74 to complete a circuit (through resistor R3) between the control pulse capacitor C3 and the control grid 50d; a pulse transformer T1 isolates the remainder of the control grid circuitry from voltage pulses that occur in the switch upon closing. A bias capacitor C4 and parallel power supply 76 are connected to the control grid 50d side of the transformer to apply a small negative bias to the control grid between pulses - this prevents the switch from inadvertently turning itself on during the capacitor recharge cycle in case of residual plasma existing in the switch. Suitable values for the various circuit components are:
R1    1kOhm       power supply 62    40kV
R2    5kOhm       power supply 64    500V
R3    5Ohm       power supply 66    2.5V
L2    100µH       power supply 70    1kV
C1    22nf       power supply 76    -150V
C2    28nf
C3    100nf
C4    2µf

[0029] FIG. 5 is a simplified mechanical drawing showing a CROSSATRON switch 78 of the present invention mounted in the switch socket 80 of a conventional excimer laser system. The visible elements of the laser system include a laser cavity 82 with reflectors 84 at either end, a high voltage power supply 86, charging system 88, capacitor 90, grid drive 92 and heater power supply 94. A blower 96 and fans 98 are provided to cool the electrical components, which are connected to the laser cavity electrodes by a low inductance interconnect 100. The switch's 10cm cathode diameter allows it to be mounted without arcing to other elements of the laser housing. It includes a flanged bracket at its lower end that is bolted to the socket floor.

Claims

1. A plasma switch, comprising:

- a vacuum housing (18);

- a generally cylindrical cold cathode (20) within said housing (18) providing a source of secondary electrons, the interior surface of said cathode (20) comprising corrugations (44) that project inward from an outer base surface (48);

- a generally cylindrical anode (22) disposed coaxially inward of the cathode (20) and having, preferably, a diameter less than half the diameter of said cathode base surface (48);

- a generally cylindrical source grid (24) coaxially disposed between said anode (22) and cathode (20);

- means for introducing an ionizable gas into the space between the cathode (20) and source grid (24), said cathode (20) and source grid (24) maintaining a plasma therebetween in response to a predetermined voltage differential between them;

- a generally cylindrical control grid (26) disposed between said source grid (24) and anode (22) for selectively enabling a plasma path between the cathode (20) and anode (22), and thereby closing the switch, in response to a control voltage signal applied to the control grid (26); and

- magnet means (40) for producing a magnetic field that extends into the area between the cathode (20) and source grid (24) and, in cooperation with a predetermined voltage differential between said cathode (20) and source grid (24), causes secondary electrons from said cathode (20) to follow cycloidal orbits in said area;

   characterized in that said corrugations (44) are extending generally axially and that the depths of said cathode corrugations (44) are essentially less than 1.5 times the distance between said corrugations (44).

2. The plasma switch of claim 1, characterized in that the ratio of the corrugation depths to the distance between corrugations (44) is essentially in the range of 1.0-1.5.

3. The plasma switch of claim 1 or 2, characterized in that said corrugations (44) project inward from said outer base surface (48) by essentially 0.5-0.7 cm and with a distance of essentially 0.4-0.6 cm between corrugations (44), said outer base surface (48) having a diameter on the order of 10 cm.

4. The plasma switch of any of claims 1 through 3, characterized in that said corrugated cathode (20) extends axially for a distance of essentially 2.5-3.0 cm.

5. The plasma switch of any of claims 1 through 4, characterized in that said corrugated cathode (20) and anode (22) define a volume between them of at least 50 cm³.

6. The plasma switch of any of claims 1 through 5, characterized in that said cathode (20) and source grid (24) define a volume between them of essentially 50-100 cm³.

7. The plasma switch of any of claims 1 through 6, characterized in that said magnet means (40) establishes an axial magnetic field substantially greater than 300 Gauss at the inward ends of said corrugations (44), and substantially less than 200 Gauss at said control grid (26) (1 Gauss = 0.1 mT).

8. The plasma switch of any of claims 1 through 7, characterized in that said magnet means (40) comprise a series of magnets (40a, 40b) that extend around the cathode (20) for an axial length of essentially 2.5-3.0 cm and have a magnetic strength of essentially 1.2-2.4 kGauss (1 Gauss = 0.1 mT).

9. The plasma switch of claim 8, characterized in that said magnets (40a, 40b) extend for an axial length of essentially 2.5 cm and have a magnetic strength of essentially 1.6-1.75 kGauss (1 Gauss = 0.1 mT).

10. The plasma switch of any of claims 1 through 9, characterized in that said magnet means (40) comprise only two stacked magnets (40a, 40b).

11. The plasma switch of any of claims 1 through 10, characterized in that said cathode (20) and anode (22) are formed from the same type of material.

12. The plasma switch of claim 11, characterized in that said cathode (20) and anode (22) are formed from molybdenum.

13. The plasma switch of any of claims 1 through 12, characterized in that said corrugations (44) are rounded at their tips.

14. Laser system having a plasma switch of any of claims 1 through 13, characterized in that said laser system comprises:

- a laser housing that includes a switch socket (80);

- a laser resonator cavity (52; 82) within said housing;

- electrodes (58, 60) for initiating an electrical discharge within said resonator cavity (52; 82) to pump a gas therein;

- said switch (50; 78) controlling the energization of said electrodes (58, 60) and being lodged within said switch socket (80).

15. The laser system of claim 14, characterized in that said cathode (20) and anode (22) are connected to complete a discharge circuit for said laser electrodes (58, 60) when the switch (50; 78) is closed.

16. The laser system of claims 14 or 15, characterized in that said laser comprises an excimer laser, wherein the diameter of said anode (22) is on the order of 2.5 cm.

17. The laser system of claims 14 or 15, characterized in that said laser comprises a CO₂ laser, wherein the diameter of said anode (22) is on the order of 1.25 cm.

Ansprüche

1. Plasmaschalter mit:

- einem Vakuumgehäuse (18);

- einer generell zylindrischen Kaltkathode (20) innerhalb des Gehäuses (18), die eine Quelle für Sekundärelektronen bereitstellt, wobei die innere Oberfläche der Kathode (20) Rippen (44) aufweist, die von einer äußeren Basisoberfläche (48) nach innen vorstehen;

- einer generell zylindrischen Anode (22), die koaxial im Inneren der Kathode (20) angeordnet ist und vorzugsweise einen Durchmesser aufweist, der kleiner ist als der halbe Durchmesser der Basisoberfläche (48) der Kathode;

- einem generell zylindrischen Quellengitter (24), das koaxial zwischen der Anode (22) und der Kathode (20) angeordnet ist;

- Mitteln zum Einführen eines ionisierbaren Gases in den Raum zwischen der Kathode (20) und dem Quellengitter (24), wobei die Kathode (20) und das Quellengitter (24) in Antwort auf ein zwischen diesen vorliegendes, vorbestimmtes Spannungsdifferential zwischen sich ein Plasma aufrechterhalten;

- einem generell zylindrischen Steuergitter (26), das zwischen dem Quellengitter (24) und der Anode (22) angeordnet ist, um selektiv in Antwort auf ein Steuerspannungssignal, das an das Steuergitter (26) angelegt ist, einen Plasmapfad zwischen der Kathode (20) und der Anode (22) freizugeben und hierdurch den Schalter zu schließen; und

- Magnetmitteln (40) zum Erzeugen eines Magnetfeldes, das sich in den Bereich zwischen der Kathode (20) und dem Quellengitter (24) erstreckt und in Zusammenwirkung mit einem vorbestimmten Spannungsdifferential zwischen der Kathode (20) und dem Quellengitter (24) hervorruft, daß Sekundärelektronen von der Kathode (20) in dem Bereich zykloiden Flugbahnen folgen;

dadurch gekennzeichnet, daß die Rippen (44) sich generell axial erstrecken und daß die Tiefen der Rippen (44) der Kathode im wesentlichen kleiner sind als der 1,5-fache Wert der Entfernung zwischen den Rippen (44).

2. Plasmaschalter nach Anspruch 1, dadurch gekennzeichnet, daß das Verhältnis der Rippentiefen zur Entfernung zwischen den Rippen (44) im wesentlichen in dem Bereich zwischen 1,0 und 1,5 liegt.

3. Plasmaschalter nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die Rippen (44) von der äußeren Basisoberfläche (48) um im wesentlichen 0,5 bis 0,7 cm einwärts vorstehen und daß eine Entfernung zwischen Rippen (44) im wesentlichen 0,4 bis 0,6 cm beträgt, wobei die äußere Basisoberfläche (48) einen Durchmesser in der Größenordnung von 10 cm besitzt.

4. Plasmaschalter nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß die mit Rippen versehene Kathode (20) sich axial über eine Entfernung von im wesentlichen 2,5 bis 3,0 cm erstreckt.

5. Plasmaschalter nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß die mit Rippen versehene Kathode (20) und die Anode (22) zwischen sich ein Volumen von wenigstens 50 cm³ definieren.

6. Plasmaschalter nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß die Kathode (20) und das Quellengitter (24) zwischen sich ein Volumen von im wesentlichen 50 bis 100 cm³ definieren.

7. Plasmaschalter nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß die Magnetmittel (40) ein axiales Magnetfeld errichten, das an den einwärtigen Enden der Rippen (44) wesentlich größer ist als 300 Gauss und an dem Steuergitter (26) wesentlich geringer ist als 200 Gauss (1 Gauss = 0,1 mT).

8. Plasmaschalter nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, daß die Magnetmittel (40) eine Reihe von Magneten (40a, 40b) aufweisen, die sich über eine axiale Länge von im wesentlichen 2,5 bis 3,0 cm um die Kathode (20) herum erstrecken und eine magnetische Stärke von im wesentlichen 1,2 bis 2,4 kGauss besitzen (1 Gauss = 0,1 mT).

9. Plasmaschalter nach Anspruch 8, dadurch gekennzeichnet, daß sich die Magnete (40a, 40b) über eine axiale Länge von im wesentlichen 2,5 cm erstrecken und eine magnetische Stärke von im wesentlichen 1,6 bis 1,75 kGauss besitzen (1 Gauss = 0,1 mT).

10. Plasmaschalter nach einem der Ansprüche 1 bis 9, dadurch gekennzeichnet, daß die Magnetmittel (40) nur zwei übereinander gestapelte Magnete (40a, 40b) aufweisen.

11. Plasmaschalter nach einem der Ansprüche 1 bis 10, dadurch gekennzeichnet, daß die Kathode (20) und die Anode (22) aus derselben Art von Material gebildet sind.

12. Plasmaschalter nach Anspruch 11, dadurch gekennzeichnet, daß die Kathode (20) und die Anode (22) aus Molybdän gebildet sind.

13. Plasmaschalter nach einem der Ansprüche 1 bis 12, dadurch gekennzeichnet, daß die Rippen (44) an ihren Enden abgerundet sind.

14. Lasersystem mit einem Plasmaschalter nach einem der Ansprüche 1 bis 13, dadurch gekennzeichnet, daß das Lasersystem aufweist:

- ein Lasergehäuse, das einen Schaltersockel (80) aufweist;

- einen Laserresonatorhohlraum (52; 82) innerhalb des Gehäuses;

- Elektroden (58, 60) zum Einleiten einer elektrischen Entladung im Inneren des Resonatorhohlraumes (52; 82), um ein Gas in diesen zu pumpen;

- wobei der Schalter (50; 78) die Erregung der Elektroden (58, 60) steuert und in den Schaltersockel (80) eingesetzt ist.

15. Lasersystem nach Anspruch 14, dadurch gekennzeichnet, daß die Kathode (20) und die Anode (22) miteinander verbunden sind, so daß eine Entladungsschaltung für die Laserelektroden (58, 60) vervollständigt ist, wenn der Schalter (50; 78) geschlossen ist.

16. Lasersystem nach Anspruch 14 oder 15, dadurch gekennzeichnet, daß der Laser einen Excimerlaser aufweist, wobei der Durchmesser der Anode (22) in der Größenordnung von 2,5 cm liegt.

17. Lasersystem nach Anspruch 14 oder 15, dadurch gekennzeichnet, daß der Laser einen CO₂-Laser aufweist, wobei der Durchmesser der Anode (22) in der Größenordnung von 1,25 cm liegt.

Revendications

1. Commutateur à plasma comprenant :

- un boîtier sous vide (18) ;

- une cathode froide globalement cylindrique (20) à l'intérieur dudit boîtier (18) fournissant une source d'électrons secondaires, la surface intérieure de ladite cathode (20) comprenant des cannelures (44) qui font saillie vers l'intérieur en partant d'une surface (48) de base extérieure ;

- une anode (22) globalement cylindrique disposée coaxialement vers l'intérieur de la cathode (20) et ayant de préférence un diamètre inférieur à la moitié du diamètre de ladite surface (48) de base de la cathode ;

- une grille (24) de source globalement cylindrique disposée coaxialement entre ladite anode (22) et ladite cathode (20) ;

- des moyens pour introduire un gaz ionisable dans l'espace compris entre la cathode (20) et la grille (24) de source, ladite cathode (20) et ladite grille (24) de source maintenant un plasma entre elles en réponse à un différentiel de tension prédéterminé entre elles ;

- une grille (26) de commande globalement cylindrique disposée entre ladite grille (24) de source et ladite anode (22) pour permettre sélectivement l'établissement d'un trajet de plasma entre la cathode (20) et l'anode (22), et ainsi fermer le commutateur, en réponse à un signal de tension de commande appliqué à la grille (26) de commande ; et

- des moyens (40) à aimants pour produire un champ magnétique qui s'étend à l'intérieur de la zone comprise entre la cathode (20) et la grille (24) de source et, en coopération avec un différentiel de tension prédéterminé entre ladite cathode (20) et ladite grille (24) de source, faire en sorte que des électrons secondaires provenant de ladite cathode (20) suivent des orbites cycloïdes dans ladite zone ;

   caractérisé en ce que lesdites cannelures (44) s'étendent globalement axialement et en ce que les profondeurs desdites cannelures (44) de cathode sont essentiellement inférieures à 1,5 fois la distance entre lesdites cannelures (44).

2. Commutateur à plasma selon la revendication 1, caractérisé en ce que le rapport des profondeurs de cannelure à la distance entre les cannelures (44) est essentiellement dans la gamme de 1,0 - 1,5.

3. Commutateur à plasma selon la revendication 1 ou 2, caractérisé en ce que lesdites cannelures (44) font saillie vers l'intérieur en partant de ladite surface (48) de base extérieure d'essentiellement 0,5 - 0,7 cm et avec une distance d'essentiellement 0,4 - 0,6 cm entre les cannelures (44), ladite surface (48) de base extérieure ayant un diamètre de l'ordre de 10 cm.

4. Commutateur à plasma selon l'une quelconque des revendications 1 à 3, caractérisé en ce que ladite cathode (20) cannelée s'étend axialement sur une distance d'essentiellement 2,5 - 3,0 cm.

5. Commutateur à plasma selon l'une quelconque des revendications 1 à 4, caractérisé en ce que lesdites cathode (20) et anode (22) cannelées définissent un volume entre elles d'au moins 50 cm³.

6. Commutateur à plasma selon l'une quelconque des revendications 1 à 5, caractérisé en ce que ladite cathode (20) et ladite grille (24) de source définissent un volume entre elles d'essentiellement 50 - 100 cm³.

7. Commutateur à plasma selon l'une quelconque des revendications 1 à 6, caractérisé en ce que lesdits moyens (40) à aimants établissent un champ magnétique axial sensiblement supérieur à 300 gauss aux extrémités intérieures desdites cannelures (44), et sensiblement inférieur à 200 gauss à l'emplacement de ladite grille (26) de commande (1 gauss = 0,1 mT).

8. Commutateur à plasma selon l'une quelconque des revendications 1 à 7, caractérisé en ce que lesdits moyens (40) à aimants comprennent une série d'aimants (40a, 40b) qui s'étendent autour de la cathode (20) sur une longueur axiale d'essentiellement 2,5 - 3,0 cm et ont une intensité magnétique d'essentiellement 1,2 - 2,4 kgauss (1 gauss = 0,1 mT).

9. Commutateur à plasma selon la revendication 8, caractérisé en ce que lesdits aimants (40a, 40b) s'étendent sur une longueur axiale d'essentiellement 2,5 cm et ont une intensité magnétique d'essentiellement 1,6 - 1,75 kgauss (1 gauss = 0,1 mT).

10. Commutateur à plasma selon l'une quelconque des revendications 1 à 9, caractérisé en ce que lesdits moyens (40) à aimants ne comprennent que deux aimants (40a, 40b) empilés.

11. Commutateur à plasma selon l'une quelconque des revendications 1 à 10, caractérisé en ce que ladite cathode (20) et ladite anode (22) sont formées à partir du même type de matériau.

12. Commutateur à plasma selon la revendication 11, caractérisé en ce que ladite cathode (20) et ladite anode (22) sont formées de molybdène.

13. Commutateur à plasma selon l'une quelconque des revendications 1 à 12, caractérisé en ce que lesdites cannelures (44) sont arrondies à leurs sommets.

14. Système laser ayant un commutateur à plasma selon l'une quelconque des revendications 1 à 13, caractérisé en ce que ledit système laser comprend :

- un boîtier laser qui comporte une douille (80) de commutateur ;

- une cavité (52;82) de résonateur laser à l'intérieur dudit boîtier ;

- des électrodes (58,60) pour déclencher une décharge électrique à l'intérieur de ladite cavité (52, 82) de résonateur afin d'y pomper un gaz ;

- ledit commutateur (50;78) commandant l'activation desdites électrodes (58,60) et étant logé à l'intérieur de ladite douille (80) de commutateur.

15. Système laser selon la revendication 14, caractérisé en ce que ladite cathode (20) et ladite anode (22) sont connectées de façon à compléter un circuit de décharge pour lesdites électrodes (58, 60) laser lorsque ledit commutateur (50 ; 78) est fermé.

16. Système laser selon les revendications 14 ou 15, caractérisé en ce que ledit laser comprend un laser excimère, dans lequel le diamètre de ladite anode (22) est de l'ordre de 2,5 cm.

17. Système laser selon les revendications 14 ou 15, caractérisé en ce que ledit laser comprend un laser à CO₂, dans lequel le diamètre de ladite anode (22) est de l'ordre de 1,25 cm.

Drawing