A field effect transistor and a production method therefor

Abstract

 In a field effect transistor and a production method thereof, a p-type layer (19) is provided at a region at source side so as not to accumulate positive holes which have flown to the source side to a high concentration. By surrounding the source side region by the p-type layer (19) and making positive holes stray to the ground through a high concentration p-type layer (18), it can be avoided that the positive holes generated at the drain side region and accumulated to the source side region weaken the electric field in a substrate (4) at the source side as well as the high concentration positive hole region (16) extends out to the drain side thereby to strengthen the electric field at the drain end region at the drain side as in the prior art, whereby the improvement in the drain breakdown voltage is enabled.

Description

FIELD OF THE INVENTION

[0001] The present invention relates to a field effect transistor and a production method therefor, and more particularly, to the improvement of the source to drain breakdown voltage of a compound semiconductor field effect transistor.

BACKGROUND OF THE INVENTION

[0002] Figure 4 is a cross-sectional view illustrating a structure of a prior art refractory metal gate field effect transistor. In the figure, reference numeral 4 designates a semi-insulating intrinsic layer or p-type layer of a compound semiconductor substrate comprising, for example, GaAs or the like. An n-type active layer 2 serving as channel is produced at the surface region of the compound semiconductor substrate 4 by implanting n-type impurity, for example, Si or the like into the surface region of the compound semiconductor substrate 4. A refractory metal gate comprising WSi or the like is produced on the n-type active layer 2 serving as a channel. High concentration n-type layers 3a and 3b which are to become a source and a drain regions, respectively, are produced at the n-type active layer 2 serving as channel by impurity plantation at the both sides of the gate electrode 1. A source electrode 6 and a drain electrode 5 are disposed on the high concentration n-type source and drain layer 4, respectively. In the figure, reference character A designates a region of high electric field produced at a region in the channel in vicinity of the drain region end between the gate and the drain region, and in this high electric field region collision ionization, which will be discussed later, occurs.

[0003] A description is given with reference to figure 5 as to how the drain breakdown voltage, i.e., the voltage at which breakdown occurs in a state where a large current is flowing between the source electrode 6 and the drain electrode 5 is determined, in the above-described compound semiconductor field effect transistor.

[0004] In figure 5(a), (b), and (c), reference numeral 1 designates a refractory metal gate, reference numeral 2 designates an n-type channel layer, reference numerals 3a and 3b designate respectively a source and a drain high concentration n-type layers, reference numeral 7 designates a depletion layer below the gate produced in the channel layer 2, reference numeral 8 designates a flow of an electron from the source region 3a to the drain region 3b in the below-gate depletion layer 7, and reference numeral 9 designates a high electric field region in the channel 2 between the gate and the drain where collision ionization occurs at an end part of the electron flow 8 in the below-gate depletion layer 7 at the drain end. Reference numeral 10 designates an electron which has lost energy due to the collision ionization. Reference numeral 11 designates a positive hole generated due to the collision ionization. Reference numeral 12 designates a source region, reference numeral 13 designates a gate region, and reference numeral 14 designates a drain region. Reference numeral 15 designates a flow of positive hole and reference numeral 16 designates a region where the concentration of positive holes is increased. Reference character E_c designates an energy of the conduction band of a compound semiconductor and reference character E_v designates an energy of the valence band of the compound semiconductor.

[0005] Figure 6 shows an energy band structure where the abscissa represents the depth along the line D-D' in figure 5(b) and the ordinate represents the energy band structure at that depth position.

[0006] In the operation of this field effect transistor, the electron flowing in the n-type channel layer 2 from the source side 6 to the drain side 5 is accelerated by a high electric field at the high electric field region A produced between the gate and the drain, and occurs collision ionization at a region in the vicinity of the drain end 9, thereby generating electron-hole pairs 10 and 11 (figure 5(a)).

[0007] The holes generated at the drain end 9 region move toward the source 6 side by being pulled toward that side as shown by the dotted line of figure 5(b), and due to the potential wall of about 1V existing between the n-type channel layer 2 and the semi-insulating i-type layer (or p-type layer) 4, a region of high hole concentration 16 is generated at the source 6 side in a stable state (figure 5(b)).

[0008] When the electric field is further intensified, the acceleration of the electron by the high electric field is further strengthened and the collision ionization at the drain end 9 region is further increased, whereby the amount of electron-hole pair generation is further increased and the high concentration hole region 16' at the source 6 side extends out closer to the drain 5 side as shown in figure 5(c).

[0009] As a result of the above-described process, the electric field of the high concentration hole region 16' extending out to the drain 5 side is weakened, whereby the distance between the high concentration hole region 16' and the drain end 9 is shortened, and further, the electric field at the drain end 5 region is strengthened. Therefore, the generation of the electron-hole pair is further increased at the drain end 9 region, thereby constituting a positive feedback, and finally reaching a breakdown.

[0010] In this way, in this field effect transistor, the holes which can move freely in the high concentration positive hole region, move so that they may cancel the electric field applied thereto thereby to weaken that electric field, and when these holes are increasingly produced in this way and these are produced at closer to the drain side, the electric field at a region between the high concentration positive hole region and the end of the drain region is further strengthened, thereby destroying the p-n junction at the drain end, leading to a breakdown.

[0011] In this prior art field effect transistor, the drain breakdown voltage is determined according to the above-described process.

[0012] In the prior art field effect transistor, holes generated at the drain end 9 region are accumulated in the substrate at the source side as described above, and the electric field intensity at the drain end 9 region is further strengthened, and this promotes the collision ionization which finally leads to a breakdown, i.e., a drain breakdown. In the prior art field effect transistor, only a drain breakdown voltage of 6V to 7V is obtained.

[0013] As another prior art, Japanese Patent Published Application No. 61-264764 discloses a non-volatile semiconductor memory in which a p⁺ type high concentration diffusion layer adjacent to an N⁺ type source diffusion layer is provided so as to stray charges to the ground. However, this prior art aims at preventing positive holes from entering the floating gate and does not aim at improving the breakdown voltage of FET.

SUMMARY OF THE INVENTION

[0014] It is an object of the present invention to provide a compound semiconductor field effect transistor that has an improved drain breakdown voltage.

[0015] It is another object of the present invention to provide a method for producing the above described field effect transistor.

[0016] Other objects and advantages of the present invention will become apparent from the detailed description given hereinafter; it should be understood, however, that the detailed description and specific embodiment are given by way of illustration only, since various changes and modifications within the spirit and scope of the invention will become apparent to the those skilled in the art from this detailed description.

[0017] According to a first aspect of the present invention, an n type high concentration layer at source side is surrounded by a p type layer and this p type layer is grounded. By this construction, the positive holes generated at the high electric field region at drain end and having flown into the source side directly flow into the ground voltage without being stored at the source side, thereby the likelihood that the positive holes stored at source side intensifies the electric field at the drain side thereby occurring a breakdown. can be suppressed.

[0018] In more detail, the field effect transistor of the present invention that has a metal-semiconductor junction formed on a first conductivity type channel layer produced on a compound semiconductor substrate as a gate electrode, includes a high concentration first conductivity type impurity layer forming a source region, a source electrode produced on the source region impurity layer, a second conductivity type impurity layer produced at below and outside of the second conductivity type source region impurity layer, a second conductivity type high concentration impurity layer produced at outside of the second conductivity high concentration impurity layer, and a second conductivity type layer electrode produced on the second conductivity type high concentration impurity layer in ohmic contact therewith, and the source electrode and the second conductivity type layer electrode are both grounded.

[0019] According to a second aspect of the present invention, a production method of a field effect transistor that has a metal-semiconductor junction formed on a first conductivity type channel layer produced on a compound semiconductor substrate as a gate electrode, includes producing a first conductivity type channel layer on a compound semiconductor substrate, producing a refractory metal on the entire surface of the substrate and applying etching processing to the refractory metal thereby to produce a gate electrode, producing an insulating film on the entire surface of the compound semiconductor substrate and etching back the same by an anisotropic etching, producing a side wall at the side of the refractory metal gate electrode, ion implanting second conductivity type impurities using the refractory metal gate and the side wall, and a resist pattern having an aperture only at source side as a mask, producing a second conductivity type impurity layer below the channel layer, removing the resist and then ion implanting first conductivity type impurities using a resist pattern having apertures at portions where a source and a drain are to be produced thereby to produce first conductivity type source and drain impurity layers, producing a high concentration second conductivity type impurity layer in the second conductivity type impurity layer at outside the source region high concentration impurity layer, and producing a second conductivity type layer electrode on the high concentration second conductivity impurity layer in ohmic contact therewith.

[0020] According to a third aspect of the present invention, a process of producing a second conductivity type impurity layer below the channel is omitted in the method according to the above-described second aspect.

[0021] According to the present invention, by that the n type source high concentration region is surrounded by a p type layer and the positive holes which have flown into the source side are made stray out to the ground through the high concentration p type layer, it can be suppressed that the positive holes generated at the drain side are stored at the source side thereby to weaken the electric field in the substrate at the source side, while the high concentration positive hole region is extended to the drain side thereby strengthen the electric field at the drain end. This results increasing the drain breakdown voltage.

BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a cross-sectional view illustrating a field effect transistor according to a first embodiment of the present invention.

[0023] Figure 2 is a cross-sectional view illustrating a field effect transistor according to a second embodiment of the present invention.

[0024] Figures 3(a) to 3(g) are diagrams illustrating a production flow for producing the field effect transistor of the first embodiment.

[0025] Figure 4 is a cross-sectional view illustrating a prior art refractory metal gate field effect transistor.

[0026] Figures 5(a) to 5(c) are schematic diagrams for explaining a drain breakdown voltage of the prior art refractory metal gate field effect transistor.

[0027] Figure 6 is a diagram illustrating an energy band structure where the abscissa represents the depth along the line D-D' in figure 5(b) and the ordinate represents the energy band structure for the respective depth position.

[0028] Figure 7 is a diagram showing the drain to source voltage vs. drain current characteristics of a field effect transistor, and a relation between the source to drain breakdown of a planner type field effect transistor and the gate to drain breakdown of the recess type field effect transistor.

DETAILED DESCRIPTION OF THE REFERRED EMBODIMENT

Embodiment 1.

[0029] Figure 1 is a diagram illustrating a semiconductor field effect transistor according to a first embodiment of the present invention. In the figure, reference numeral 4 designates a semi-insulating intrinsic layer or p-type layer of a compound semiconductor substrate such as GaAs or the like. An n-type active layer 2 serving as a channel of impurity concentration of 1 to 5 x 10¹⁷ cm⁻³ and a thickness of about 1000 Å is produced at the surface region of the compound semiconductor substrate 4. A refractory metal gate 1 comprising WSi or the like is produced on the n-type active layer 2 serving as a channel and the height of the gate 1 is about 3000 Å and the gate length is about 0.3 to 0.4 µm. High concentration n-type layers 3a and 3b of impurity concentration of about 5 x 10¹⁸ cm⁻³ serving as a source region and a drain region, respectively, are produced at the n-type active layer 2 serving as a channel at the both sides of the gate electrode 1 by impurity implantation to a depth a little larger than that of the channel layer. The interval between the source region and the drain region is about 3 µm. A source electrode 6 (n side electrode) and a drain electrode 5 comprising AuGe/Ni/Au are produced on the high concentration n-type layers 3a and 3b, respectively, in about 2500 Å thick.

[0030] A p-type high concentration layer 18 of impurity concentration of 1 x 10²⁰ cm⁻³ is produced outside the high concentration n-type layer 3a at the source side. A p-type ohmic electrode 17 is disposed on the p-type high concentration layer 18 in contact therewith. A p-type layer 19 of impurity concentration of about 10¹⁶ to 10¹⁸ cm⁻³ and of a depth of 2000 to 3000 Å is produced under the high concentration n-type layer 3a at the source side and the p-type high concentration layer 18. The electrode (p side electrode) comprising Ti/Pt/Au or Ti/Mo/Au is produced on the p-type layer 18 in about 2500 Å thick. When a circuit is constructed, the electrode 17 on the p-type layer 18 and the source electrode 6 are connected to each other to constitute a source grounded circuit.

[0031] In the structure of this first embodiment shown in figure 1, the p-type layer 19 is provided below the p-type high concentration layer 18 and the source side high concentration n-type layer 3a as well as the p-type high concentration layer 18 is provided outside the source side high concentration n-type layer 3a in contact therewith, and the ohmic electrode 17 is provided on the p-type high concentration layer 18. Therefore, the positive holes generated at the drain (5) side region and flowing to the source (6) side region are structurally grounded by the p-type ohmic electrode 17 through the p-type high concentration layer 18.

[0032] Therefore, the positive holes generated at the drain end 9 region are not stored in the substrate at the source side, but flow to the ground even when they flow to the source side. As a result, it never occurs that the positive holes are stored at the source side thereby to further strengthen the electric field at the drain end 9 region, finally leading to a breakdown, thereby greatly improving the drain breakdown voltage of the field effect transistor. By such a structure, a breakdown voltage of above 10V is obtained.

[0033] While the present invention relates to a technique of improving the drain breakdown voltage, in a planar FET, when the gate to drain voltage is increased, the gate to drain destruction occurs, leading to a breakdown before the drain current reaches a fairly large value. In other words, the gate to drain breakdown voltage in a planar type FET is always lower than that of the recess type FET, and in order to solve the problem that the gate to drain breakdown voltage (corresponding to the gate breakdown voltage) is low, a gate is produced offset or a recess type gate is provided. In such recess type MESFET, however, although the gate breakdown voltage as well as the drain breakdown voltage are increased by adopting the recess type structure, such recess type MESFET requires a recess etching, resulting in a complicate production process.

[0034] To the contrary, when the method of the present invention is employed, it is possible with keeping the transistor structure in a planar type to obtain an MESFET having a high drain breakdown voltage in a planar type MESFET in which drain breakdown voltage appears prior to the gate breakdown voltage by using jointly the gate offset and the method of the present invention.

[0035] This fact will be described in more detail with reference to figure 7. In a recess type field effect transistor, the external source and drain layer (ohmic contact formation layer) is thicker relative to the thickness of the channel layer direct below the gate, and even when positive holes extend out to the drain side, the effect that the electric field between the gate and the drain is increased thereby is suppressed. In comparison with a planar type one, the breakdown due to the destruction between the source and the drain when a smaller source to drain current flows, i.e., the destruction and breakdown at the part B in the drain to source voltage versus drain current characteristics shown in figure 7 appears prior to the breakdown between the gate and the drain when a larger source to drain current flows, i.e., the destruction and breakdown at the part C in the characteristics shown in figure 7, thereby resulting in a gate breakdown voltage lower than the drain breakdown voltage.

[0036] On the other hand, in a planar type field effect transistor, although it is possible to increase the gate to drain breakdown voltage by enlarging the distance between the gate and the drain, the drain to source breakdown voltage when a larger current flows cannot be increased even by increasing the distance between the gate and the drain, resulting in that the destruction at the part C shown in figure 7 occurs prior thereto. Therefore, increasing the drain to source breakdown voltage is requested.

[0037] As discussed above, in the field effect transistor of the first embodiment of the present invention, so as not to accumulate the positive holes flowing from the drain 5 side region to the source 6 side region due to the high electric field region produced at the drain 5 side region to a high concentration, the p-type layer 19 is provided outside the source region 3a, and the p-type layer 19 is provided surrounding the source region 3a to make the positive holes stray to the ground through the high concentration p-type layer 18. Therefore, it is avoided that the positive holes generated at the drain side region are accumulated at the source side region thereby to weaken the electric field in the substrate at the source side region as well as the high concentration positive hole region extends out to the drain side, thereby strengthening the electric field at the drain end region at the drain side, whereby the drain breakdown voltage of the planar type FET can be largely increased.

Embodiment 2.

[0038] Figure 2 is a cross-sectional view illustrating a field effect transistor according to a second embodiment of the present invention. In the figure, reference numeral 20 designates a p-type layer of impurity concentration of about 10¹⁶ cm⁻³ inserted between the semiconductor substrate 4 and the channel layer 2. The other constructions except for providing this p-type layer 20 are the same as those of the first embodiment shown in figure 1 and the operation is almost the same as that of the first embodiment. However, it is possible to make the effective channel thickness thinner by the p-n junction produced under the channel, thereby improving the gain of the transistor.

Embodiment 3.

[0039] Figure 3 shows cross-sectional views for illustrating a production method of a field effect transistor according to a third embodiment of the present invention. This third embodiment is an embodiment of a method for producing the field effect transistor of the above-described first embodiment shown in figure 1. The production method will be described with reference to figure 3 in the following.

[0040] First, an n-type channel layer 2 of impurity concentration of about 1 to 5 x 10¹⁷ cm⁻³ is produced on the compound semiconductor substrate 4 (Figure 3(a)).

[0041] Next, a refractory metal 1, for example WSi, is sputtered on the entire surface, and thereafter, this refractory metal is processed to a gate configuration by performing a dry etching using a gas mixture of CHF₃ and SF₆ using a resist mask 20 as the mask, thereby producing a gate electrode 1 (Figure 3(b)).

[0042] Next, after removing the mask 20, SiO insulating film 21 is produced to about 3000Å thickness on the entire surface, this is etched back by anisotropically etching using a gas mixture of CHF₃ and O₂, thereby producing side walls 21a of about 3000 Å width in the transverse direction (Figure 3(c)).

[0043] Next, a resist pattern 22 having an opening 22a only at the source side is produced, and p-type impurity, for example, Mg is ion-implanted from the opening 22a so that the n-type channel layer 2 can be inverted to p-type or more and a concentration peak may come to a deep position of about 2000 Å from the surface, thereby producing a p-type layer 19 (Figure 3(d)).

[0044] Next, a resist pattern 23 having an opening 23a over the region from the source region 3a to the drain region 3b is produced, and n-type impurity, for example, Si is ion-implanted from the opening 23a, and after removing the resist, the device is heated to a temperature of 500 to 550 C to perform an annealing, and the implanted impurities are diffused, thereby producing a source region 3a and a drain region 3b (Figure 3(e)).

[0045] Next, an insulating film 24, for example, a plasma SiN film, having an opening 24a at the outside (opposite side of the drain region 3b) of the source region 3a at the source side is produced, thereafter, a ZnO film 25 is spattered, and using the SiN film 24 as a mask, solid phase diffusion is carried out to diffuse Zn into the p-type layer 19 from the ZnO film 25 at the opening 24a of the SiN film 24, thereby producing a p-type high concentration layer 18 of impurity concentration of about 1 x 10²⁰ cm⁻³ (Figure 3(f)).

[0046] Next, ohmic electrodes 6, 5, and 17 are respectively produced on the source region 3a, the drain region 3b, and the Zn diffusion layer 18 (Figure 4(g)).

[0047] In the production method of a field effect transistor according to this third embodiment, the field effect transistor having the structure shown in figure 1 can be easily produced.

Embodiment 4.

[0048] This fourth embodiment relates to a method for producing the field effect transistor of the second embodiment shown in figure 2. This fourth embodiment can be obtained only by omitting the process of producing the p-type layer 19 in figure 3(d) in the production process of an FET of the third embodiment shown in figure 3. According to this fourth embodiment, the field effect transistor of the second embodiment can be easily produced.

Embodiment 5.

[0049] This fifth embodiment relates to a method for producing the field effect transistor shown in figure 1. This fifth embodiment is obtained by previously producing the p-type layer 19 below the n-type channel layer 2 in the first process shown in figure 3(a) and omitting the process shown in figure 3(d) corresponding thereto in the production method of a field effect transistor of the third embodiment shown in figure 3.

[0050] In this fifth embodiment, the field effect transistor of the structure shown in figure 1 can be more easily obtained than by the third embodiment.

[0051] Although the above-described prior art, Japanese Patent Published Application No. 61-264764, is common to the present invention in that a p-type layer is provided at the source and it is grounded so as to stray positive holes to the source side, this prior art publication does not concern compound semiconductor MESFETs as in the present invention, but concerns silicon devices. Therefore, the insertion of p-type layer has not come from the view of increasing the drain breakdown voltage, and also the operation mechanism and principle are quite different.

[0052] In addition, there are some techniques of providing a p-type region to prevent interferences between circuit elements, which p-type region is connected to ground. However, these conventional techniques only provides a ground between circuits and do not provide a boundary region of a ground voltage between circuits and do not provide a p-type region in an FET element, which p-type region is grounded.

[0053] As discussed above, according to the present invention, a p-type layer is produced surrounding a high concentration n-type layer at the source side, and the source is grounded through the high concentration p-type layer. Therefore, it can be avoided, that positive holes generated at the drain end region are accumulated at the source side region thereby to weaken the electric field in a substrate at the source side region as well as the high concentration positive hole region extends out to the drain side thereby to strengthen the electric field at the drain side, finally leading to a breakdown. This results a great improvement in the drain breakdown voltage at the drain side region.

Claims

1. A field effect transistor (Fig. 1) which includes metal-semiconductor junction, serving as a gate electrode (1), produced on a first conductivity type channel layer (2) produced on a compound semiconductor substrate (4), comprising:
   a high concentration first conductivity type impurity layer (3a) serving as a source region;
   a source electrode (6) produced on said source region impurity layer (3a);
   a second conductivity type impurity layer (19) produced below and at the outside of said source region impurity layer (3a) so as to surround said source region (3a);
   a second conductivity type high concentration impurity layer (18) produced at a portion of said second conductivity type impurity layer (19) at the outside of said source region impurity layer (3a);
   a second conductivity type layer electrode (17) disposed on said second conductivity type high concentration impurity layer (18) so as to be in contact with said second conductivity type high concentration impurity layer (18); and
   said source electrode (6) and said second conductivity type layer electrode (17) both being grounded to the earth.

2. The field effect transistor (Fig. 2) of claim 1, wherein said source region high concentration impurity layer (3a) has no said underlying second conductivity type impurity layer (19).

3. A method for producing a field effect transistor (Fig. 3) which includes metal-semiconductor substrate, serving as a gate electrode (1), produced on a first conductivity type channel layer (2) produced on a compound semiconductor substrate (4), comprising:
   producing said first conductivity type channel layer (2) on said compound semiconductor substrate (4);
   producing a refractory metal on the entire surface of said substrate (4) and etching the same to produce a gate electrode (1);
   producing an insulating film (21) on the entire surface of said compound semiconductor substrate (4) and anisotropically etching back the same to produce side walls (21a) at the side surfaces of said refractory metal gate electrode (1);
   implanting ions of second conductivity type impurity employing said refractory metal gate (1), said side walls (21a), and a resist pattern (22) having an aperture (22a) only at the source side as masks to produce a second conductivity type impurity layer (19) underlying said channel layer (2);
   removing a portion of said resist pattern (22) and implanting ions of first conductivity type impurity employing a resist pattern (23) having apertures (23a) for producing a source and a drain of a transistor as a mask to produce a first conductivity type source and drain impurity layers (3a and 3b);
   producing a high concentration second conductivity type impurity layer (18) in a portion of said second conductivity type impurity layer (19) at the outside of said source region high concentration impurity layer (3a) by diffusion; and
   producing a second conductivity type layer electrode (17) on said high concentration second conductivity type impurity layer (18) in ohmic contact with said second conductivity type impurity layer (18).

4. A method for producing a field effect transistor comprising:
   producing a first conductivity type channel layer (2) on a compound semiconductor substrate (4);
   producing a refractory metal on the entire surface of said substrate (4) and etching the same to produce a gate electrode (1);
   producing an insulating film (21) on the entire surface of said compound semiconductor substrate (4) and anisotropically etching back the same to produce side walls (21a) at the side surfaces of said refractory metal gate electrode (1);
   removing a portion of a resist pattern (22) and implanting ions of first conductivity type impurity employing a resist pattern (23) having apertures (23a) for producing a source and a drain of a transistor as a mask to produce a first conductivity type source and drain impurity layers (3a and 3b);
   producing a high concentration second conductivity type impurity layer (18) in a portion of a second conductivity type impurity layer (20) at the outside of said source region high concentration impurity layer (3a) by diffusion; and
   producing a second conductivity type layer electrode (17) on said high concentration second conductivity type impurity layer (18) in ohmic contact with said second conductivity type impurity layer (18).

Drawing