| (19) |
 |
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(11) |
EP 0 634 788 A3 |
| (12) |
EUROPEAN PATENT APPLICATION |
| (88) |
Date of publication A3: |
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02.11.1995 Bulletin 1995/44 |
| (43) |
Date of publication A2: |
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18.01.1995 Bulletin 1995/03 |
| (22) |
Date of filing: 01.07.1994 |
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| (84) |
Designated Contracting States: |
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DE FR GB |
| (30) |
Priority: |
09.07.1993 JP 170068/93
|
| (71) |
Applicant: KABUSHIKI KAISHA TOSHIBA |
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Kawasaki-shi,
Kanagawa-ken 210 (JP) |
|
| (72) |
Inventors: |
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- Ohshima, Yoichi,
c/o Intellectual Property Div.
Minato-ku,
Tokyo 105 (JP)
- Aochi, Hideaki,
c/o Intellectual Property Div.
Minato-ku,
Tokyo 105 (JP)
|
| (74) |
Representative: Lehn, Werner, Dipl.-Ing. et al |
|
Hoffmann, Eitle & Partner,
Patentanwälte,
Arabellastrasse 4
81925 München
81925 München (DE) |
|
| |
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| (54) |
Method of manufacturing semiconductor device utilizing selective CVD method |
(57) A method of manufacturing semiconductor devices, which comprises the steps of forming
a first conductive region of a first conductive material for effecting a growth of
a conductive film thereon by a selective growth method. A second conductive region
of a second conductive material for not effecting a growth of a conductive film is
formed in the selective growth method. An insulating layer is covered with the first
and second conductive regions. A through hole in the insulating layer for filling
the hole with the conductive film is formed. The conductive film is grown within said
through hole over the first conductive region, thereby filling the through hole with
the conductive film.