(19)
(11) EP 0 637 847 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
05.07.1995 Bulletin 1995/27

(43) Date of publication A2:
08.02.1995 Bulletin 1995/06

(21) Application number: 94305830.5

(22) Date of filing: 05.08.1994
(51) International Patent Classification (IPC)6: H01L 29/73, H01L 29/861, H01L 27/07
(84) Designated Contracting States:
DE FR GB IT NL

(30) Priority: 06.08.1993 GB 9316368

(71) Applicants:
  • TEXAS INSTRUMENTS INCORPORATED
    Dallas Texas 75265 (US)

    DE FR IT NL 
  • TEXAS INSTRUMENTS LIMITED
    Bedford MK41 7PA (GB)

    GB 

(72) Inventors:
  • Maytum,Mick
    Willington Bedfordshire MK44 3QB (GB)
  • Garnham,Dave
    Sharnbrook Bedfordshire MK44 1HY (GB)

(74) Representative: Nettleton, John Victor et al
Abel & Imray Northumberland House 303-306 High Holborn
London, WC1V 7LH
London, WC1V 7LH (GB)


(56) References cited: : 
   
       


    (54) Improvements in or relating to transistor switches


    (57) An electronic switch (80) having a transistor (T) and a diode (D) formed on a substrate (82) is provided. The electronic switch (80) includes a commong transistor collector and diode cathode region (81) of a first conductivity type formed in the substrate (82). The switch (80) also includes a transistor base region (83) of a second conductivity type formed in a first section of the collector region (81) and a transistor emitter region (84) of the first conductivity type formed in a section of the base region (80) includes a diode anode region (85) formed of the second conductivity type and in a second section of the collector region (81). At least a portion of the anode region (85) is selectively doped with a metallic dopant to provide centers for charge carrier recombination so as to increase the recovery time of the diode (D).






    Search report