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(11) | EP 0 646 968 B1 |
| (12) | EUROPEAN PATENT SPECIFICATION |
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Method of manufacturing diamond semiconductor Verfahren zur Herstellung eines Diamanthalbleiters Procédé pour la fabrication d'un semi-conducteur de diamant |
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| Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention). |
Background of the Invention
[0001] This invention relates to a method of manufacturing a diamond semiconductor device in accordance with the precharacterizing part of claim 1. Such a method is known e.g. from EP-A-0 543 392.
[0002] There were attempts to artificially synthesize diamond in old days, and in 1960s it became possible to successfully synthesize diamond even under low pressures. Up to now, it has become possible to manufacture thin films of diamond under pressure close to vacuum. This has led to extensive attempts to obtain diamond semiconductor from thin film diamond and produce semiconductor devices by using such diamond semiconductor.
[0003] Compared with silicon, diamond has the following characters.
(1) Its carrier mobility is much higher so that its operation speed is several times than that of silicon.
(2) Its band gap is 5.5 eV wide, and thus it is capable of operation without destruction at an overwhelmingly high temperature of 700°C compared to silicon. (With silicon, a trend of operation state deterioration arises at around 150°C.)
(3) It resists radiation. Particularly, it is less subject to software error due to radiation which is a problem in the super LSI. This means that it can be used even in bad environments. Thus, it is expected to be used in stringent environments such as center space or places around a nuclear reactor. Such applications can not be expected with silicon.
[0004] For practical use of diamond semiconductor, however, there are problems to be solved such as follows.
(1) There still is no process of inexpensively growing single crystal thin film.
(2) It is impossible to obtain n-type doping.
(3) There still is no practically estabilished etching technique for designing complicated circuits.
[0005] Particularly, the problem in (2), i.e., impossibility of n-type doping, is a fatal one in the device production, which is very serious for the future practical use of diamond semiconductor.
[0006] This point will be described in further detail. Diamond itself is generally very inferior in the doping efficiency when it is used as semiconductor material. For example, the carrier concentration that is obtainable by a p-type semiconductor with 1,000 ppm of boron is only about 10E16 cm-3.
[0007] Further, the constituent element of diamond is carbon, with its atomic diameter being small compared to silicon or the like. Therefore, it is impossible to use for the n-type doping such element as phosphorus which is used in the silicon process, and it is inevitable to use nitrogen with the atomic diameter close to that of carbon (see, for instance, Japanese Patent Laid-Open Publication No. Sho 4-266020). In case of using nitrogen, however, there is the following problem.
[0008] The fifth valence electron of the nitrogen atom is strongly bound to the nitrogen atom, and its releasing requires great electron energy of 1.7 eV. Therefore, at room temperature only a very small number of electrons can be moved in the crystal, and thus effective device functions can not be obtained. For this reason, when using nitrogen atoms as dopant, it is necessary to effect the doping without causing destruction of the crystal structure and also with a high concentration. This dictates some or other contrivance for the doping process. Due to this problem, nitrogen is inconvenient as doping means. Accordingly, there has been a demand for an n-type doping technique using an element other than nitrogen.
[0009] As prior art, there has been proposed a technique of forming diamond semiconductor through vapor growth (CVD) using a heated filament process, which uses as material a liquid-phase organic compound containing lithium or a compound thereof (obtainable by dissolving lithium oxide, lithium hydroxide, lithium chloride, lithium ethylate, etc. in acetone, methanol, ethanol, aldehyde, etc.) (Japanese Patent Laid-Open No. Hei 3-205398). There has also been proposed a technique of forming diamond semiconductor through the heated filament CVD or various types of plasma CVD by adding lithium or a compound thereof to the material gas (such as methane) in a heating device (Japanese Patent Laid-Open Publication No. Hei 4-175295). These techniques, however, are not always clear with respect to their realization. In addition, in either technique impurities are introduced simultaneously with the diamond semiconductor thin film formation, and it is not sure that the diamond semiconductor having been formed is doped.
Summary of the Invention
[0010] The present invention has been obtained in the light of the problems discussed above, and it seeks to provide a technique, which can solve the above problems, is free from the possibility of diamond structure destruction, permits n-type doping of diamond and permits high concentration n-type doping.
[0011] In the method of producing the diamond semiconductor device, disclosed in EP-A-0 543 392 which corresponds to the pre-characterizing part of claim 1, the lithium compound used for doping lithium atoms into the diamond semiconductor layer is e.g. a solution of lithium chloride in azetone.
[0012] JP-A-4-1745 17 describes a further known method of manufacturing a diamond semiconductor device by means of diffusion of lithium atoms from e.g. a lithium compound into a diamond crystal whereby a film containing lithium or lithium containing compound is laminated on the former diamond film and heated to achieve a solid face-solid face diffusion of lithium atoms. In contradiction thereto, the lithium diffusion in the present method is carried out by ECR-discharge where the lithium atoms are diffused from their vapour phase into the diamond crystal.
[0013] According to the present invention, the above problems are solved by a method of manufacturing a diamond semiconductor device, comprising the steps of:
forming a diamond semiconductor layer on a substrate; and subsequently
doping lithium atoms into the diamond semiconductor layer by using ECR plasma to form a diffusion layer in the diamond semiconductor layer, characterized in that the lithium atoms are produced from a nitrogen compound of lithium.
[0017] The step of dry cleaning may be carried out with ECR plasma and by using the same apparatus as for the doping.
[0018] The invention is predicated in the following knowledge secured by the inventor. While it is well known in the art that boron is used as p-type dopant for diamond semiconductor, it has been pointed out that boron, when struck by a neutron, becomes lithium of n-type. According to the invention, this problem is used conversely, and lithium is used. Lithium has a smaller atomic radius than carbon atoms, and thus it is suitable as dopant.
[0019] The ECR discharge permits formation of high density plasma of about 1 x 1012 cm-3 by using the commonly termed electronic cyclotron resonance. It is thus possible to produce active lithium atoms at a high density. Besides, the ion energy is too low to be able to destroy the crystal structure.
[0020] As for the source of lithium element, almost all lithium compounds are solid at normal temperature. Therefore, compounds which have been provided in the prior art of obtaining diamond semiconductor using lithium or a compound thereof as noted before, are not always convenient, and it is suitable to use a compound which can be readily gassified. Such compounds are nitrogen compounds of lithium. Particularly, lithium azide which can be decomposed at about 120°C, can be used suitably as the source for CVD or the like. Further, as a result of decomposition of lithium azide, nitrogen is produced as another element. It is disclosed that nitrogen may be an n-type dopant with respect to diamond (e.g., Japanese Patent Laid-Open Publication No. Hei 4-266020, and U.S. Patent Application No. 08/238,892 filed on May 6, 1994 assigned to the assignee of the present application), and it is free from pollution problems.
[0021] Generally, high ionization degree plasma is obtainable without burden on the side of the plasma generating apparatus by supplying pulse microwave to the apparatus. As an example, in order to obtain a high temperature plasma at an ion density of 1 x 1014 cm-3 or above, the microwave output should be 10 W/cm2 or above. When such high power microwave is supplied as a continuous wave to the chamber, great damage may be caused to the window member between the chamber and waveguide and also to the chamber inner walls. By supplying microwave pulses, high density plasma is obtainable without such problem. In addition, the gas dissociation proceeds, and active lithium atoms can be produced at a high density.
[0022] Further, by using the same ECR plasma CVD apparatus, the diamond semiconductor surface can be cleaned by causing nitrogen system gas flow with RF bias application before causing lithium azide gas flow. Besides, the nitrogen system gas is free from any pollution problem.
[0023] As has been shown, according to the invention it is possible to obtain effective n-type doping of diamond semiconductor and high concentration doping of nitrogen into diamond semiconductor.
Brief Description of the Drawings
[0024]
Figs. 1(A) and 1(B) are views illustrating a process in an embodiment; and
Fig. 2 is an ECR plasma doping apparatus used in the embodiment.
Description of the Preferred Embodiments
Examples
[0025] Examples of the invention will now be described with reference to the drawings. The following examples of course are by no means limitative and may be changed variously without departing from the scope of the invention. For example, changes in the structures and conditions involved are possible.
Example 1
[0026] In this example, the invention is carried out for doping lithium by using lithium azide gas and with ECR plasma while applying no RF bias.
[0027] Fig. 2 shows an ECR plasma doping apparatus used in this example. The apparatus is a microwave plasma doping apparatus with magnetic field. A microwave 2 is generated in a magnetron 1 and can be shaped into a pulse wave in a pulse generator, if necessary (in this example it is not necessary to form any pulse shaping) to be coupled through a waveguide 3 to a reaction chamber 5 defined by quartz wall 4. A solenoid coil 6 which surrounds the reaction chamber 5 generates a microwave frequency (2.45 GHz) and a magnetic field (8.75E-2T) for achieving ECR discharge, thus generating gas plasma 7. A substrate 8 is set on a susceptor 9 which is conveyed and set in position by conveying means (not shown). The susceptor 9 with the substrate 8 set thereon is heated by a heater (not shown) through a heater tubing 10, whereby the substrate 8 is heated. Gas is introduced through a gas inlet tube 11 and exhausted by an exhausting system (not shown) through an exhausting tube. Lithium azide is accommodated in a tank (not shown) capable of heating, and it is heated to 120°C before it is supplied.
[0028] In this example, the process of doping lithium into diamond semiconductor was carried out as follows.
[0029] A diamond semiconductor film 102 was formed by low pressure synthesis on a substrate 101, and then an insulating film (SiO2 film) 103 was formed to a thickness of 200 nm on the film 102 by the usual plasma CVD to form a resist pattern 104. Then, an opening is formed by etching to form an exposed portion 105 (Fig. 1(A)).
[0030] Then, doping was made into the exposed portion 105 of the diamond semiconductor film 102 using the apparatus of Fig. 2 described above and under the following conditions, thus forming a diffusion layer 106.
Rate of gas flow: LiN3 = 30 SCCM
Pressure: 1.33 Pa
Temperature: 150°C
Microwave: 850 W (2.45 GHz)
RF bias: 0 W
[0031] Since microwave was supplied at this time, high density plasma (of about 1012 cm-3) was produced by the ECR discharge to dope lithium atoms at a high density. Thus, the diffusion layer 106 as shown in Fig. 1(B) could be formed efficiently.
[0032] The operation of this diamond semiconductor was tested to obtain satisfactory semiconductor operation.
[0033] As shown, with this example it is possible to obtain efficient n-type doping into diamond semiconductor, which has been a fatal problem in the prior art, and manufacture high performance diamond semiconductor with high productivity and inexpensively.
Example 2
[0034] This example concerns the doping into diamond semiconductor with ECR plasma produced by pulse microwave. The same ECR plasma doping apparatus shown in Fig. 2 as in Example 1 was used.
[0035] The work had the same structure as that in Example 1, so Figs. 1(A) and 1(B) will be referred to.
[0036] As in Example 1, the diamond semiconductor film 102 was formed by low pressure synthesis on substrate 101. Then, Si2O film 103 was formed to a thickness of 200 nm on the film 102 to form resist pattern 104. Then, an opening was formed by etching to form exposed portion 105. The structure shown in Fig. 1(A) was then formed.
[0037] Doping was then carried out into the exposed portion 105 of the diamond semiconductor film 102 using the apparatus of Fig. 2 and under the following coditions, thus forming diffusion layer 106.
Rate of gas flow: LiN3 = 30 SCCM
Pressure: 1.33 Pa
Temperature: 150°C
Microwave: 850 W (2.45 GHz)
RF bias: 0 W
Pulse ratio of the microwave pulses: 1 : 2
[0038] Since in this embodiment pulse microwave was supplied at the time of doping process, high density (at about 1 x 1014 cm-3) plasma was generated to obtain high density doping of lithium atoms, thus obtaining the structure shown in Fig. 1(B). With this example, the same effects as in Example 1 could be obtained.
Example 3
[0039] In this example, the doping was carried out in combination with surface cleaning. The same ECR plasma doping apparatus as in Example 1 was used.
[0040] Now, an actual example of application of the invention to the doping into diamond semiconductor will be described with reference to Figs. 1(A) and 1(B).
[0041] The diamond semiconductor film 102 was formed by low pressure synthesis on substrate 101, and then the SiO2 film 103 was formed to a thickness of 200 nm on the diamond film 102 by usual plasma CVD to form resist pattern 104. An opening was then formed by etching to form exposed portion 105 (Fig. 1(A)).
[0042] Then, the surface of the exposed portion 105 in the diamond semiconductor film 102 was cleaned by using the apparatus of Fig. 2 and under the following conditions. At this time, it is of course to effect etching by applying a RF bias, and this principle is utilized in this example. The substrate temperature was set to 30°C. The microwave was held "on" at all times. The N20 gas that is used at this time has no adverse effects on diamond and does not have any possibility of pollution. Of course, it is possible to use other nitrogen system gases such as nitrogen gas. By using the nitrogen system gas in the above way, it is possible to avoid cross contamination (or mutual contamination).
Rate of gas flow: N2O = 30 SCCM
Pressure: 1.33 Pa
Temperature: 30°C
Microwave: 850 W (2.45 GHz)
RF bias: 30 W
[0043] Afterwards, doping into the exposed portion 105 of the diamond semiconductor layer 102 was carried out by using the apparatus of Fig. 2 and under the following conditions, thus forming the diffusion layer 106. The conditions were the same as in Example 2.
Rate of gas flow: LiN3 30 SCCM
Pressure: 1.33 Pa
Temperature: 100°C
Microwave: 850 W (2.45 GHz)
RF bias: 0 W
Pulse ratio of microwave pulses: 1 : 2
[0044] As shown, since pulse microwave was supplied, high density (of about 1 x 1014 cm-3) plasma was generated to obtain high density doping of lithium atoms (Fig. 1(B)).
1. A method of manufacturing a diamond semiconductor device, comprising the steps of:
forming a diamond semiconductor layer (102) on a substrate (101); and subsequently
doping lithium atoms into the diamond semiconductor layer by using ECR plasma to form a diffusion layer (106) in the diamond semiconductor layer (102), characterized in that the lithium atoms are produced from a nitrogen compound of lithium.
2. The method of manufacturing a diamond semiconductor device according to claim 1, wherein
the ECR plasma is produced by pulse microwave.
3. The method of manufacturing a diamond semiconductor device according to claim 1, wherein
the surface of the diamond semiconductor layer is dry cleaned before the doping.
4. The method of manufacturing a diamond semiconductor device according to claim 3, wherein
the dry cleaning is carried out by using ECR plasma.
5. The method of manufacturing a diamond semiconductor device according to claim 3, wherein
the dry cleaning is carried out by using N2O etching gas.
6. The method of manufacturing a diamond semiconductor device according to claim 3, wherein
the dry cleaning and the doping are carried out in the same plasma apparatus.
7. The method of manufacturing a diamond semiconductor device according to claim 1, wherein
the nitrogen compound of lithium is lithium azide.
1. Verfahren zum Herstellen eines Halbleiterbauteils aus Diamant, mit den folgenden Schritten:
- Herstellen einer Diamanthalbleiterschicht (102) auf einem Substrat (101); und anschließend
- Eindotieren von Lithiumatomen in die Diamanthalbleiterschicht unter Verwendung eines ECR-Plasmas zum Ausbilden einer Diffusionsschicht (106) in der Diamanthalbleiterschicht (102);
dadurch gekennzeichnet, dass die Lithiumatome aus einer Stickstoffverbindung von Lithium erzeugt werden.2. Verfahren zum Herstellen eines Halbleiterbauteils aus Diamant nach Anspruch 1, bei
dem das ECR-Plasma durch impulsförmige Mikrowellen erzeugt wird.
3. Verfahren zum Herstellen eines Halbleiterbauteils aus Diamant nach Anspruch 1, bei
dem die Oberfläche der Diamanthalbleiterschicht vor dem Dotieren trocken gereinigt
wird.
4. Verfahren zum Herstellen eines Halbleiterbauteils aus Diamant nach Anspruch 3, bei
dem die Trockenreinigung unter Verwendung eines ECR-Plasmas ausgeführt wird.
5. Verfahren zum Herstellen eines Halbleiterbauteils aus Diamant nach Anspruch 3, bei
dem die Trockenreinigung unter Verwendung von N2O-Ätzgas ausgeführt wird.
6. Verfahren zum Herstellen eines Halbleiterbauteils aus Diamant nach Anspruch 3, bei
dem die Trockenreinigung und die Dotierung in derselben Plasmavorrichtung ausgeführt
werden.
7. Verfahren zum Herstellen eines Halbleiterbauteils aus Diamant nach Anspruch 1, bei
dem die Stickstoffverbindung von Lithium Lithiumazid ist.
1. Procédé de fabrication d'un dispositif semiconducteur de diamant, comprenant les étapes
de :
formation d'une couche semi-conductrice de diamant (102) sur un substrat (101) ; et par la suite
dopage des atomes de lithium dans la couche semi-conductrice de diamant par utilisation de plasma ECR pour former une couche de diffusion (106) dans la couche semi-conductrice de diamant (102), caractérisé en ce que les atomes de lithium sont produits à partir d'un composé d'azote de lithium.
2. Procédé de fabrication d'un dispositif semiconducteur de diamant selon la revendication
1, dans lequel le plasma ECR est produit par une impulsion hyperfréquence.
3. Procédé de fabrication d'un dispositif semiconducteur de diamant selon la revendication
1, dans lequel la surface de la couche semi-conductrice de diamant est nettoyée à
sec avant le dopage.
4. Procédé de fabrication d'un dispositif semiconducteur de diamant selon la revendication
3, dans lequel le nettoyage à sec est réalisé en utilisant du plasma ECR.
5. Procédé de fabrication d'un dispositif semiconducteur de diamant selon la revendication
3, dans lequel le nettoyage à sec est réalisé en utilisant du gaz de gravure N2O.
6. Procédé de fabrication d'un dispositif semiconducteur de diamant selon la revendication
3, dans lequel le nettoyage à sec et le dopage sont réalisés dans le même appareil
à plasma.
7. Procédé de fabrication d'un dispositif semiconducteur de diamant selon la revendication
1, dans lequel le composé d'azote de lithium est de l'azide de lithium.