(19)
(11) EP 0 649 045 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
27.12.1995 Bulletin 1995/52

(43) Date of publication A2:
19.04.1995 Bulletin 1995/16

(21) Application number: 94116026.9

(22) Date of filing: 11.10.1994
(51) International Patent Classification (IPC)6: G02F 1/133, B23K 26/02
(84) Designated Contracting States:
DE FR GB

(30) Priority: 14.10.1993 JP 256215/93

(71) Applicant: NEC CORPORATION
Tokyo (JP)

(72) Inventors:
  • Haba, Belgacem
    Minato-ku, Tokyo (JP)
  • Morishige, Yukio
    Minato-ku, Tokyo (JP)

(74) Representative: Glawe, Delfs, Moll & Partner 
Patentanwälte Postfach 26 01 62
80058 München
80058 München (DE)


(56) References cited: : 
   
       


    (54) Method of repairing disconnection of wiring of a liquid crystal substrate


    (57) The invention provides a method of depositing a patterned thin layer for repairing a wiring disconnection of a liquid crystal wiring substrate (12). The method includes the steps of positioning a medium (15) in the vicinity of or in contact with the disconnection of the substrate (12), and radiating a laser beam to the medium (15) so that a material produced by a thermal decomposition of the medium (15) is stuck to the disconnection to form a patterned thin layer for repairing the disconnection. Since the method does not need the steps of applying a medium to a substrate, heating a substrate, and washing a substrate after a modification has been completed, all of these steps are required in conventional methods, it takes only 30 seconds per a repairing, whereas the conventional methods took about 5 minutes.






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