BACKGROUND OF THE INVENTION
[0001] For controlling the energy stored in an inductive load, it is important to make available
a diagnostic signal when the current in the inductor reaches a preset level.
[0002] A driving system for an inductor is depicted in Fig. 1. The inductor L is connected
between a supply node Vs and a transistor T₁ that acts as a switch, driven by a drive
circuit (DRIVE) to an input of which a signal V
IN is applied.
[0003] As shown in Fig. 2, when V
IN goes high, T₁ turns-on and a current I
C starts to flow through the inductor, increasing with a linear law in function of
time. For any value I reached by the current, the corresponding energy that is stored
in the inductance is given by:
The power stage normally comprises a circuit for limiting the maximum current in
order to avoid destruction of the transistor, therefore in the diagram of Fig. 2,
the current is limited to a maximum value I
max. Moreover, if the transistor T₁ must be turned-off always at the same level of energy
stored in the inductor, it is necessary to produce a signal when the current I reaches
a preset level I
D, in order to maximize the energy stored in the inductor at the end of each charging
phase, that is when T₁ turns off. This is often required, for example, in electronic
sparkplug driving, where it is also necessary that the level I
D at which the turning off occurs be very close to the maximum limit current I
max.
[0004] In conventional systems, this is achieved in the manner depicted in Fig. 3. A maximum
current limiting circuit A1 (LIMITATOR) intervenes on the drive circuit (DRIVE) when
the voltage drop on the sensing resistance R
s, due to I
C, equals the reference voltage E₁, that is when

.
[0005] Similarly, a diagnostic signal V
D of Fig. 2, is produced when

, considering that, for the above reported reasons, I
D may have a value very close to I
max. To this purpose, a second diagnostic comparator (DIAGNOSTIC) A2 is employed.
[0006] Given that I
D must be lower than I
max, though close thereto, E₁ must also be greater than E₂ but must have a value very
close thereto. The absolute values of E₁ as well as of E₂ should on the other hand
be as low as possible, because to them corresponds a voltage drop on R
s due to the current I
C. Such a voltage drop is in series with the saturation voltage of the transistor and
causes power dissipation, therefore the voltage on R
s and therefore also E₁ and E₂ should not be greater than few 10mV. This means that
if a diagnostic signal, for example for a value greater than 90% of the limit current
I
max, is required;

must be verified.
[0007] As a numeric example, by assuming: I
max=5A and R
s=10mΩ; E₁=50mV and therefore

. This means that

. Occasionally,

may be required and the difference between E₁ and E₂ must be even smaller than few
mV.
[0008] The known arrangement of Fig. 3 is critical, because the voltage difference on R
s at which the operational amplifiers A₁ and A₂ must react is very small (in the order
of millivolts) and is comparable in terms of order of magnitude with the voltage offset
of the comparators that are employed. This may determine a non-negligeable imprecision
in the signalling of the reaching by the current I
C of the diagnostic level I
D. Eventually, if the offset of the differential amplifier A₂ become greater in absolute
value than the voltage difference E₁ - E₂, the system will not produce the required
diagnostic signal, with serious consequence on the functioning of the system.
[0009] In other words, in all the applications where for obvious reasons of optimization,
the current level I
D must be fixed very close to the limit level I
max, the known circuits may be operating in extremely critical conditions and therefore
losing in reliability and precision in ensuring a correct ratio between I
D and I
max.
OBJECTIVE AND SUMMARY OF THE INVENTION
[0010] A main objective of the present invention is to provide a system for generating a
diagnostic signal, indicative of the reaching by the current flowing through a power
transistor of a preset level, the precision of which be substantially insensitive
of the input offset of the respective detecting circuits.
[0011] A further aim of the invention is to simplify the known circuit by employing a single
monitoring comparator in order to eliminate the imprecision deriving from different
characteristics of equivalent input offset of distinct monitoring comparators.
[0012] The new method of the invention is implemented by a circuit that employs a single
detecting differential amplifier, capable of producing a signal the level of which
is a function of the difference between a reference voltage and a voltage present
across a sensing resistance of the current flowing through the power transistor. The
signal produced by the differential amplifier (comparator) is conventionally employed
for driving a transistor that is functionally connected so as to subtract part of
a driving current that is delivered toward the power transistor by a conventional
drive circuit.
[0013] In this way, a negative reaction is implemented that determines a maximum limit of
the current through the power transistor and, according to a preferred embodiment
of the invention, the same signal produced by the comparator is used for driving a
second transistor through which a current that is essentially lower than said current
subtracted to the first transistor is forced.
[0014] Therefore, the signal present across said second transistor is employed for producing
the desired diagnostic signal by employing a threshold circuit.
[0015] The second transistor, driven in a current mirror relationship with the first current
limiting transistor, reaches a state of saturation before the first transistor and
therefore determines the triggering of a threshold circuit that generates the diagnostic
signal upon the reaching of a current level I
D, positively lower by a pre-established quantity than the limit current value I
max.
[0016] The current forced through the second transistor Is a mirrored current that may have
a given ratio with a driving current that is delivered toward the power transistor.
[0017] The ratio between I
D and I
max no longer depends from the input equivalent offset of the comparator, as in the circuits
of the prior art, because the respective circuits that determine: one, the limit value
of the current through the output power transistor, and the other, the generation
of a diagnostic signal upon the reaching of a certain level I
D by the current, are both driven by the same signal produced by the comparator. Therefore,
the circuit permits to fix said ratio even very close to unity, though ensuring a
correct operation of the circuit also in presence of disturbances. In practice, the
invention allows to maximize the energy handled by the power transistor, while retaining
a high degree of safety and realiability.
BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The different features and advantages of the invention will become even clearer through
the following description of an important embodiment and by referring to the attached
drawings, wherein:
Figure 1 is a functional diagram of an output stage for driving a load L;
Figure 2 shows a series of diagrams of operation of a power stage, according to certain recurrent
requisites for this type of circuit, as described above;
Figure 3 is a block diagram of a control system for a power stage according to the requisites
set forth in the diagrams of FIg. 2, as described above;
Figure 4 is a functional block diagram of a control circuit for a power stage according to
the present invention;
Figure 5 is a circuit diagram of an embodiment of the circuit of the invention.
GENERAL DESCRIPTION OF THE INVENTION
[0019] The functional block diagrams of Figures 3 and 4 place in evidence the distinction
between the known method for generating a diagnostic signal V
D, depicted in Fig. 3, and the method of the invention depicted in Fig. 4.
[0020] As may be observed, the invention contemplates the use of a single comparator, which
may be constituted by a differential amplifier A (comparator) capable of generating
a signal in function of the difference between a reference voltage E₁ and the voltage
present across a sensing resistance R
s, through which the current I
C flowing in the power transistor T₁ (and in the load L) flows.
[0021] The signal produced by the comparator A drives two circuits. The first circuit (LIMITATOR)
produces a limiting signal of the maximum current that may flow through the power
transistor T₁, which acts on the drive circuit (DRIVE) that delivers a driving current
to the power transistor T₁. The second circuit (DIAGNOSTIC) is a circuit capable of
producing a diagnostic signal V
D upon the reaching by part of the current I
C of a value I
D that is lower by a re-established amount than the limiting value I
max of the current I
C, as established by the LIMITATOR circuit.
PREFERRED EMBODIMENT OF THE INVENTION
[0022] A preferred embodiment of the circuit of the invention is shown in Fig. 5. The circuit
operates in the following manner. When V
IN is commanded high, the control circuit CONTROL closes the switch M and a current
I
G flows in T₂. Also T₄ and T₅, both connected in a current mirror configuration with
the transistor T₂, are turned-on and generate currents, the value of which will depend
from the respective ratio of emitter area with T₂.
[0023] T₅ provides a driving current:

, to the base of T₉, which activates the power transistor T₁ with a base current

. Of course, the equalities:

will be verified and the current I
C will start to flow in the inductor L through the transistor T₁.
[0024] When I
C reaches the value:
, the differential amplifier A is activated and through its output starts to deliver
current to the bases of the transistors T₆ and T₇.
[0025] T₇ starts to absorb a current I₇, by subtracting it to the driving current I₅, so
that , being

and being I₅ constant, upon an increase of I₇, I
F will also increase and therefore

will decrease. Finally, when I
B has dropped down to the value given by:

, the current through the load would stabilize at a maximum level I
max, which cannot be overcome in view of the fact that the feedback loop of the amplifier
A tends to maintain the condition

.
[0026] According to the invention, to obtain a diagnostic signal V
D, a transistor T₆, functionally connected in a current mirror configuration with the
transistor T₇, is employed. Therefore, the two transistors T₆ and T₇ will reach a
state of conduction simultaneously and with a current ratio that directly depends
from the ratio between their emitter areas. As an example, it may be assumed that

.
[0027] A diagnostic signal:

is generated by the threshold circuit composed of the stage comprising T₃ and R₁.
The signal V
D is generated upon the turning-on of T₃, which is determined by the signal present
substantially across the transistor T₆. The turning-on of T₃ will occur only if: I₆
> I₄; but

, I
F being equal to

.
[0028] Therefore, by imposing the condition:

, the transistor T₆, once it has absorbed all the current I₄, saturates and activates
T₃, thus determining the generation of the diagnostic signal V
D.
[0029] The diagnostic signal V
D is always produced
positively before the the reaching of the maximum limit current, because, as already mentioned,

, and being

, the collector voltage of the transistor T₆ tends to fall positively before the
collector voltage of T₇. By suitably adjusting the emitter area ratio between T₆ and
T₇ and between T₄ and T₅, it is possible to precisely determine a certain ratio I
D/I
max, which may also be very close to unity.
[0030] The only parameter of the circuit described above, which may still determine an imprecision
in the definition of the level of current in the inductor at which the diagnostic
signal is generated, may be desumed from the expression already reported above:

. In fact, I
F depends from the current gains of T₁ and T₉, which may vary with the temperature
and/or be subject to a process "spread".
[0031] This cause of possible imprecision may be better understood by considering the expressions:

, I₆ > I₄ and

. The first equality denounces a strong dependence on temperature due to the term
I
F, while the second disequality is independent of temperature. As a consequence the
third equality above could be incoherent with the first two relationships.
[0032] In order to prevent the effects of this possible problem, an additional circuit composed
of the transistors T₈ and T₁₀, may be introduced, as shown in the embodiment of Fig.
5. The function of the additional circuit is the following.
[0033] T₈ and T₁₀ are connected in current mirror configuration with T₉, therefore the following
conditions hold:

;

;

where A₈, A₉ and A₁₀ are the respective emitter areas of the transistors.
[0034] Moreover, with the addition of the circuit composed by T₈ and T₁₀, it may be shown
that in order for a diagnostic signal V
D to be generated, the following conditions must hold:

; while

; but

and

from where, by assuming for example

, the following relationships are derived:
by having set:
[0035] Dependence from the current gain of transistors is exibited only by the current I₈,
which (from Fig. 5) is given by:

However, the term I₈ is present both in the expression (1) and in the expression
(2) which, if combined with the equation (3), show that the condition of generation
of a diagnostic signal is practically independent from the current gain of the power
transistor T₁.
1. A method for generating a diagnostic signal, indicative of the reaching of a predefined
level, lower than a maximum limit value, by the current flowing through a power transistor
which comprises generating at least a signal, function of the difference between a
reference voltage and a voltage produced on a sensing resistance through which said
current flows and using said signal for signalling the reaching of said preset level,
characterized by the fact that a unique signal, function of said voltage difference,
drives a first circuit that limits the maximum current and a threshold circuit generating
said diagnostic signal.
2. A method as defined in claim 1, characterized by comprising
driving, with said unique signal a first transistor, functionally capable of subtracting
part of a driving current delivered to said power transistor, and a second transistor;
forcing through said second transistor a current essentially lower than said substracted
current, for saturating a third transistor;
using a signal present across said saturating third transistor for triggering the
generation of said diagnostic signal.
3. A circuit for limiting the maximum current of the power transistor (T₁) and for generating
a diagnostic signal (VD) indicative of the reaching by part of the current (IC) through said power transistor T₁ of a preset level, lower than a maximum current
level, comprising at least a differential amplifier (A) capable of generating a signal,
the level of which is a function of the difference between a reference voltage (E₁)
and a voltage present across a sensing resistance (Rs) of said current (IC) and at least a first transistor (T₇) driven by said signal, functionally capable
of subtracting of part (I₇) of a driving current (I₅) delivered to said power transistor
(T₁) by a control circuit, determining a maximum limit of the current (IC), characterized by comprising
at least a second transistor (T₆) driven by said signal;
means (T₄) capable of forcing through said second transistor (T₆) a current (I₄)
essentially lower than said current (I₇) subtracted by said first transistor (T₆);
a threshold circuit (T₃, R₁), driven by a signal present across said second transistor
(T₆), capable of producing said second diagnostic signal (VD).
4. A circuit as defined in claim 3, characterized by comprising a current mirror circuit
(T₂, T₄, T₅) capable of mirroring a control current (I₄) through a third transistor
(T₄) constituting said means capable of forcing a current through said second transistor
T₆, and through a fourth transistor (T₅) capable of delivering said driving current
(I₅) to said power transistor (T₁).
5. A circuit according to claim 4, wherein said third transistor (T₄) has a smaller size
than said fourth transistor (T₅).
6. A circuit according to claim 5, wherein said power transistor (T₁) if driven through
a stage composed of a fifth transistor (T₉) , driven by a current equivalent to the
current (I₅) driven by said fourth transistor, less said current (I₇), subtracted
by said first transistor (T₇).
7. A circuit according to claim 6, characterized by comprising a sixth transistor (T₈),
connected to said fifth transistor (T₉), to form a current mirror with a seventh,
diode-configured, transistor (T₁₀), said sixth transistor (T₈) absorbing current from
the driving node of said threshold circuit (T₃, R₁); the ratio among the respective
emitter areas of said fifth, sixth and seventh transistors (T₉, T₈, T₁₀) being such
as to render the triggering condition of said threshold circuit (T₃, R₁) independent
from variation of the current gain of the power transistor (T₁).