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(11) | EP 0 657 943 A3 |
| (12) | EUROPEAN PATENT APPLICATION |
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| (54) | Semiconductor device having a thyristor structure |
| (57) A semiconductor device having a thyristor structure including a first semiconductor
region of a first conductivity type, a second semiconductor region of a second conductivity
type, a third semiconductor region of the first conductivity type and a fourth semiconductor
region of the second conductivity type; a first MISFET capable of injecting majority
carriers from the fourth semiconductor region into the second semiconductor region;
and a second MISFET capable of being turned on and off independently of the first
MISFET and extracting majority carriers from the third semiconductor region into the
fourth semiconductor region, wherein the fourth semiconductor region is divided into
the source region of the first MISFET and the source region of the second MISFET,
the latter being formed in a portion isolated from the former, characterized in that
the depth of the source region of the second MISFET is different from that of the
drain region thereof. |