(19)
(11) EP 0 660 337 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
08.11.1995 Bulletin 1995/45

(43) Date of publication A2:
28.06.1995 Bulletin 1995/26

(21) Application number: 94120409.1

(22) Date of filing: 22.12.1994
(51) International Patent Classification (IPC)6: H01C 7/112, H01C 17/06
(84) Designated Contracting States:
DE FR GB

(30) Priority: 24.12.1993 JP 326588/93
17.02.1994 JP 20209/94

(71) Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Kadoma-shi, Osaka-fu, 571 (JP)

(72) Inventors:
  • Hattori, Akiyoshi
    Yawata City, 614 (JP)
  • Hori, Yoshihiro
    Hirakata City, 573-01 (JP)
  • Yoshida, Akihiko
    Hirakata City, 573 (JP)

(74) Representative: Jung, Elisabeth, Dr. et al
Patentanwälte, Dr. Elisabeth Jung, Dr. Jürgen Schirdewahn, Claus Gernhardt, Postfach 40 14 68
D-80714 München
D-80714 München (DE)


(56) References cited: : 
   
       


    (54) Metal oxide film resistor and method for producing the same


    (57) A metal oxide film resistor comprises mainly zinc oxide and an auxiliary oxide of at least one metal added as an activator for covering a wide range of resistance of from 1 kΩ to 10 MΩ. A method of producing such a metal oxide film resistor comprises the steps of preparing a solution composed of at least a zinc salt, and forming a zinc oxide film (2) on an insulating substrate (1) by supplying a vapor of the solution to the insulating substrate (1) heated to a temperature at which the zinc salt thermally decomposes and by thermally decomposing the zinc salt on the surface of the insulating substrate (1).






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