......DE....FRGB..................................R0660337EUROPEAN PATENT APPLICATIONA319951108EP94120409.119941222enenen326588/9319931224JP20209/9419940217JP19951108199545199506281995266 6H 01C 7/112 A 6H 01C 17/06 BdeMetalloxid-Dünnschichtwiderstand und HerstellungsverfahrenenMetal oxide film resistor and method for producing the samefrRésistance en film mince d'oxyde de métal et méthode de fabrication1MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.00216883X 171 M1006, Oaza KadomaKadoma-shi, Osaka-fu, 571JPHattori, Akiyoshi3-A17-104, Otokoyama-takezonoYawata City, 614JPHori, Yoshihiro46-3-402, Yamadaike-higashimachiHirakata City, 573-01JPYoshida, Akihiko19-13, Korien Yamanote-choHirakata City, 573JPJung, Elisabeth, Dr.et al00006103Patentanwälte, Dr. Elisabeth Jung, Dr. Jürgen Schirdewahn, Claus Gernhardt, Postfach 40 14 68D-80714 MünchenDEDEFRGB19951108199545

A metal oxide film resistor comprises mainly zinc oxide and an auxiliary oxide of at least one metal added as an activator for covering a wide range of resistance of from 1 kΩ to 10 MΩ. A method of producing such a metal oxide film resistor comprises the steps of preparing a solution composed of at least a zinc salt, and forming a zinc oxide film (2) on an insulating substrate (1) by supplying a vapor of the solution to the insulating substrate (1) heated to a temperature at which the zinc salt thermally decomposes and by thermally decomposing the zinc salt on the surface of the insulating substrate (1).