TRANSISTOR FABRICATION METHODS AND METHODS OF FORMING MULTIPLE LAYERS OF PHOTORESIST - Patent 0672299

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EP 0 672 299 A1

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(43)	Date of publication:
	20.09.1995 Bulletin 1995/38

(21)	Application number: 94901678.0

(22)	Date of filing: 30.11.1993

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International Patent Classification (IPC):

H01L 21/ 8238^{( . )}
H01L 21/ 336^{( . )}
H01L 27/ 092^{( . )}
H01L 29/ 78^{( . )}

H01L 21/ 265^{( . )}
H01L 21/ 8244^{( . )}
H01L 27/ 11^{( . )}
H01L 29/ 786^{( . )}

(86)	International application number:
	PCT/US1993/011422

(87)	International publication number:
	WO 1994/013009 (09.06.1994 Gazette 1994/13)

(84)	Designated Contracting States:
	DE FR GB IT NL

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Priority:

01.12.1992 US 19920984666

(71)	Applicant: PARADIGM TECHNOLOGY, INC.
	San Jose, California 95134 (US)

(72)	Inventors:
	YEN, Ting-Pwu Fremont, CA 94539 (US) CHEN, Hsiang-Wen Cupertino, CA 95014 (US)

(74)	Representative: Hector, Annabel Mary
	W.P. Thompson & Co. Celcon House 289-293 High Holborn GB-London WC1V 7HU GB-London WC1V 7HU (GB)

(54)	TRANSISTOR FABRICATION METHODS AND METHODS OF FORMING MULTIPLE LAYERS OF PHOTORESIST