(19)
(11) EP 0 681 327 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
05.02.1997 Bulletin 1997/06

(43) Date of publication A2:
08.11.1995 Bulletin 1995/45

(21) Application number: 95302789.3

(22) Date of filing: 26.04.1995
(51) International Patent Classification (IPC)6: H01L 23/532
(84) Designated Contracting States:
DE FR GB

(30) Priority: 28.04.1994 US 234884

(71) Applicant: XEROX CORPORATION
Rochester New York 14644 (US)

(72) Inventors:
  • Fulks, Ronald T.
    Mountain View, California 94040 (US)
  • Yao, William W.
    Los Altos, California 94022 (US)
  • Ho, Jackson H.
    Palo Alto, California 94301 (US)

(74) Representative: Goode, Ian Roy et al
Rank Xerox Ltd Patent Department Parkway
Marlow Buckinghamshire SL7 1YL
Marlow Buckinghamshire SL7 1YL (GB)

   


(54) Dual dielectric capping layers for hillock suppression in metal layers in thin film structures


(57) A thin film structure comprising a substrate (52), a metal layer (54) supported by said substrate, a first dielectric layer (56) deposited over the metal layer and a second dielectric layer (58) deposited over the first dielectric layer. The temperature of deposition of the first dielectric layer should be chosen low enough so as to avoid stressing the metal layer and, thus, to keep the metal layer substantially hillock free during the deposition of the first dielectric layer. The second dielectric layer (58) may then be deposited at a higher temperature than the first layer (56).






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