A SEMICONDUCTOR DEVICE HAVING A SELF-ALIGNED P-WELL WITHIN A P-BURIED-LAYER - Patent 0698283

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EP 0 698 283 A1

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(43)	Date of publication:
	28.02.1996 Bulletin 1996/09

(21)	Application number: 95911124.0

(22)	Date of filing: 27.02.1995

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International Patent Classification (IPC):

H01L 21/ 74^{( . )}
H01L 21/ 8249^{( . )}

H01L 21/ 8238^{( . )}

(86)	International application number:
	PCT/US1995/002467

(87)	International publication number:
	WO 1995/025342 (21.09.1995 Gazette 1995/40)

(84)	Designated Contracting States:
	DE FR GB

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Priority:

15.03.1994 US 19940213621

(71)	Applicant: NATIONAL SEMICONDUCTOR CORPORATION
	Sunnyvale, CA 95086-3737 (US)

(72)	Inventors:
	CHEN, Datong Fremont, CA 94538 (US) BASHIR, Rashid Santa Clara, CA 95051 (US) DE SANTIS, Joseph, A. San Jose, CA 95123 (US)

(74)	Representative: Bowles, Sharon Margaret, et al
	BOWLES HORTON Felden House Dower Mews High Street Berkhamsted Hertfordshire HP4 2BL Berkhamsted Hertfordshire HP4 2BL (GB)

(54)	A SEMICONDUCTOR DEVICE HAVING A SELF-ALIGNED P-WELL WITHIN A P-BURIED-LAYER