Technical Field
[0001] This invention relates to integrated semiconductor lasers and, more particularly,
to a laser which is tunable to a one or more of a plurality of selectable frequencies.
Background of the Invention
[0002] High capacity lightwave transmission systems attempt to optimize bandwidth usage
by employing wavelength division multiplexing. This is accomplished by using optical
sources such as lasers, each designed to operate at a different wavelength (frequency)
from the other lasers.
[0003] Recently, a number of designs have been proposed for tunable semiconductor lasers
exhibiting a large number of available optical wavelengths. One such tunable laser
is shown in U.S. Patent 5,373,517 and EP-A-0 612 125.
[0004] This laser is fabricated with optical amplifiers, optical waveguides and an N×N waveguide
grating router which are all integrated on a semiconductor wafer and disposed within
a resonant optical cavity formed between two reflective end surfaces.
[0005] Waveguides formed in the semiconductor wafer carry light between the reflective end
surfaces and the frequency router. The waveguides terminate on the input and output
ports of the router at locations determined solely by first order diffraction within
the free-space region of the router.
[0006] An addressable optical amplifier is formed in a portion of each input and output
waveguide for the router. Each amplifier can be selectively addressed via a bias current
to provide optical gain or optical loss. Amplification results within a particular
waveguide when the amplifier is activated by a bias current. If the amplification
provides sufficient optical gain to overcome intra-cavity losses, lasing is sustained
at the wavelength determined by the path through the router. Moreover, selected amplifiers
provide sufficient loss within their respective waveguides to prevent transmission
of optical energy when no bias current or a low bias current is supplied to the amplifier.
[0007] In operation, this tunable laser is set to operate at a predetermined wavelength
when a single pair of amplifiers is selected to operate in their separate amplification
modes. This pair of amplifiers determines a particular path through the frequency
router and, therefore, the wavelength of the light output. Light at the desired wavelength
is extracted directly from the spot at which the particular path terminates on the
reflective end surface. The laser is rapidly tunable to any of N wavelengths by selecting
an appropriate pair of amplifiers.
[0008] While this laser has shown improved performance with respect to tuning speed, tuning
range, and wavelength selectivity, its overall length is sufficiently long to prohibit
high speed operation using direct modulation or an intra-cavity modulator. Modulation
is limited to several hundred Mbps.
Summary of the Invention
[0009] A tunable laser capable of high speed operation is realized by modifying the aforementioned
tunable laser to incorporate an N×N wavelength grating router having an output waveguide
positioned for capturing second order diffraction optical energy from a free-space
region in the router. The second order diffraction optical energy is delivered to
the laser output at the desired wavelength to which the laser is tuned.
[0010] Reflective surfaces of the laser can be modified to improve overall performance of
the laser. In one embodiment of the tunable laser, highly reflective coatings are
employed on the reflective surfaces at the terminus of all waveguides except the output
waveguide. In another embodiment of the laser, an anti-reflective coating is utilized
on the reflective surface at the remote end of the output waveguide.
[0011] An external modulator is integrated into the output waveguide of the tunable laser
in another embodiment of the invention.
Brief Description of the Drawing
[0012] A more complete understanding of the invention may be obtained by reading the following
description of specific illustrative embodiments of the invention in conjunction with
the appended drawing in which:
FIG. 1 shows a simplified schematic drawing of a prior art tunable laser incorporating
a waveguide grating router;
FIG. 2 shows a simplified diagram of the waveguides and free-space regions in a prior
art waveguide grating router;
FIG. 3 shows a simplified diagram of a modified portion of the waveguide grating router
having a secondary or output waveguide for capturing second order diffraction optical
energy;
FIG. 4 shows a simplified schematic drawing of a tunable laser incorporating a waveguide
grating router realized in accordance with the principles of the present invention;
and
FIG. 5 shows an alternative embodiment of the tunable laser of FIG. 4.
Detailed Description
[0013] A brief description of the prior art tunable laser and waveguide grating router is
being provided in order to develop a better understanding of the present invention
and its departure from the prior art. It should be noted that the waveguide grating
router has also been referenced by its inventors and others as a "frequency routing
device." The latter term describes the action of light at different frequencies taking
different paths through the router. In the description which follows, the terms "frequency"
and "wavelength" may be used interchangeably when referring to the operation of the
laser or its router.
[0014] FIG. 1 shows an example of a prior art laser which is rapidly tunable over a wide
frequency range. The tunable laser comprises a waveguide grating router for providing
frequency selectivity, a number of waveguides extending from the router for carrying
optical signals to and from the router, and a number of active sections for providing
optical amplification and sufficient gain for lasing behavior. Constituent elements
of the laser shown in FIG. 1 may be monolithically integrated on a semiconductive
wafer. These elements may be realized using known photolithographic and semiconductor
growth techniques.
[0015] FIG. 1 shows an exemplary illustration of wafer 10 made of a semiconductive material
such as a semiconductor compound from Group III-V. For example, the wafer and its
grown regions can be realized primarily from layers of indium phosphide (InP) and
an indium phosphide based material such as InGaAsP. Growth techniques such as MOCVD
are contemplated for device fabrication.
[0016] As shown in FIG. 1, N×N waveguide grating router 12 is defined on wafer 10. A first
plurality of waveguides 14₁, 14₂,..., 14
N is connected to one end of waveguide grating router 12; a second plurality of waveguides
16₁, 16₂, ..., 16
N is connected to an opposite end of waveguide grating router 12. The waveguides are
disposed at each end of the free space region at appropriate locations which correspond
to only the presence of first order diffraction light energy from the waveguide grating.
Waveguides 14 and 16 are realized in practice as buried rib waveguides.
[0017] In the embodiment shown in FIG. 1, a first plurality of optical amplifiers 18₁, 18₂,
..., 18
N connects corresponding ones of the first plurality of waveguides to cleaved face
20 formed in semiconductive wafer 10; a second plurality of waveguides 22₁, 22₂, ...,
22
N connects corresponding ones of the second plurality of waveguides to second cleaved
face 24 formed in wafer 10. Cleaved faces 20 and 24 form the reflective surfaces defining
the resonant cavity in which lasing action is supported.
[0018] Each optical amplifier comprises a doped section of waveguide with controllable optical
transmissivity. Doping may be such that an appropriately configured semiconductor
junction is defined in each optical amplifier. The doped section is optically active
in that application of electrical energy to the doped section causes it to become
transmissive to the flow of optical energy and provides some degree of gain to optical
signals flowing through the doped section. When electrical bias current above a lasing
threshold is applied, laser action begins. These doped sections of waveguide are substantially
opaque to the transmission of light when there is no applied electrical stimulation.
The electrically controlled doped sections thus may be considered to be optoelectronic
gates with optical amplification capability. Each amplifier is thereby individually
controllable and addressable The details of fabricating such sections in a semiconductor
wafer such as wafer 10 shown in FIG. 1 are generally known in the art and thus are
not described here.
[0019] A gate control circuit 25 selectively provides bias current to predetermined ones
of the optical amplifiers to produce laser light at one of N discrete frequencies
as indicated by output light beam 11 in FIG. 1.
[0020] Selective application of bias current to predetermined ones of the optical amplifiers
in FIG. 1 defines certain wavelength selective optical pathways in the resonant cavity
between cleaved faces 20 and 24 determined by the geometry of the waveguide grating
region of the router. Application of bias current above a lasing threshold to the
selected ones of the optical amplifiers will cause lasing action at a wavelength supported
in the wavelength selective optical pathways. Those optical amplifiers which are not
driven by any bias current remain opaque to the transmission of optical energy through
them. As such they block transmission of light at other wavelengths.
[0021] Waveguide grating router 12 operates in such a way that an optical signal at frequency
F₁ in waveguide 14₁ is directed straight through router 12 to waveguide 16₁ and vice
versa. For an optical signal at frequency F₂, the router directs the optical signal
from waveguide 14₁ to waveguide 16₂ and vice versa. In general, an optical signal
having a frequency F
i appearing on waveguide 14₁ and flowing toward the device 12 is directed to a waveguide
16
i by the waveguide grating router. Similarly, an optical signal having a frequency
F
i appearing on a waveguide 16
i and flowing toward the waveguide grating router 12 is directed to waveguide 14₁.
Additional details about operation and fabrication of router 12 are discussed in U.S.
Patents 5,002,350, 5,136,671, and 5,243,672, all issued to C. Dragone. It will be
apparent to those persons skilled in the art that waveguides 14 serve as extensions
of their corresponding waveguides in router 12, namely, waveguides 26. Similarly,
waveguides 16 serve as extensions of the corresponding waveguides 38 in router 12.
[0022] The edges of the wafer at the ends of the two sets of optical amplifiers are cleaved
to form reflective surfaces define a tunable resonant cavity between them. Amplifiers
on one side of waveguide grating router 12 are used as electronically controllable
transmission gates opened by application of a bias current. When these gates are biased
by a current of 10 to 20 mA, for example, they become optically transparent and provide
some gain depending on the level of the bias current with respect to the lasing threshold
current value. On the other hand, the gates are highly lossy and suppress optical
transmission when the applied bias current is zero.
[0023] In normal operation, only one optical amplifier from the plurality on one side of
router 12 is biased so that it is optically transmissive. The remaining optical amplifiers
of the plurality on the same side are usually unbiased. On the opposite side of waveguide
grating router 12, one of the optical amplifiers in that plurality is also biased
above a lasing threshold. The remaining amplifiers on that side are then unbiased
in order to absorb any light reaching them. The pair of biased (active) optical amplifiers
then defines a particular pathway through the router which produces an optical signal
at a specific wavelength associated with that pathway.
[0024] Application of bias currents to the optical amplifiers in this manner defines a transparent
pathway within the resonant cavity for lasing action. Along this pathway, stationary
waves can be sustained for wavelengths (frequencies) within a passband associated
with the pathway. Wavelengths outside this passband are associated with the other
pathways and are therefore suppressed by the lossy unbiased optical amplifiers. Lasing
occurs at the Fabry-Perot mode whose wavelength is nearest the passband maximum. Adjacent
Fabry-Perot modes are suppressed by passband selectivity which can be adjusted by
appropriate design of the router.
[0025] For the N×N waveguide grating router of FIG. 1, there are N passbands having a bandwidth
ΔF and repeated periodically with a free spectral range (FSR) period NΔF. Assuming
that the gain of the active semiconductive medium peaks sufficiently over one of these
FSRs, N lasing wavelengths can be obtained in the free spectral range by appropriate
activation of selected optical amplifiers in the wafer 10. Wavelengths outside this
free spectral range are suppressed by gain discrimination. Tuning is achieved at discrete
wavelengths separated by intervals ΔF over a tuning range NΔF. In addition, combinations
of lasing frequencies can be obtained by activating more than one amplifier section
on one side of router 12.
[0026] Described below are several examples illustrating tuning of the laser in FIG. 1 to
one of a plurality of discrete optical frequencies. If it is desired that the laser
of FIG. 1 produce optical energy at a frequency F₁, bias current is applied to optical
amplifier 18₁ and optical amplifier 22₁. When the total gain from the two optical
amplifiers is sufficient to overcome the total optical loss in the cavity, lasing
is sustained at the wavelength determined by the path through the router. The minimum
current required to sustain lasing is commonly called the threshold current.
[0027] An optically transmissive path is thereby defined between the reflective surfaces
20 and 24. This path comprises optical amplifier 18₁, waveguide 14₁, waveguide grating
router 12, waveguide 16₁, and optical amplifier 22₁. An optical standing wave is formed
in the resonant cavity at frequency F₁ and laser light at that desired frequency is
output by the integrated device of FIG. 1 as shown by output optical beam 11. In this
case, surface 20 may be partially transmissive and surface 24 may be totally reflective.
[0028] Similarly, if it is desired that the laser of FIG. 1 produce optical energy at a
frequency F₂, bias current is applied to optical amplifier 18₁ and optical amplifier
22₂. Bias current applied to optical amplifier 22₂ is above the lasing threshold for
the semiconductor material. An optically transmissive path is thereby defined in the
resonant cavity. The path comprises optical amplifier 18₁, waveguide 14₁, waveguide
grating router 12, waveguide 16₁, and optical amplifier 22₂. An optical standing wave
is created between the surfaces 20 and 24 at the frequency F₂ and laser light at that
frequency is output by the device of FIG. 1 as shown by output optical beam 11.
[0029] Optical energy at frequencies F₃ to F
N may be produced by activating optical amplifiers 22₃ to 23
N, respectively, instead of activating the optical amplifiers 22₁ or 22₂. The output
frequency produced by the laser in FIG. 1 may be changed rapidly by switching the
applied bias current from one optical amplifier to another in some desired order.
[0030] FIG. 2 shows the pertinent details in simplified form of an exemplary of a waveguide
grating router device 12 employed in FIG. 1. The waveguide grating router contains
a plurality of input waveguides 26 connected to first free space region 28. A plurality
of interconnecting waveguides 30 extends from the free space region 28 to optical
grating waveguide region 32. Optical grating waveguide region 32 comprises a plurality
of unequal length waveguides for providing a predetermined amount of path length difference
between interconnecting waveguides 30 and a corresponding plurality of interconnecting
waveguides 34 connected to second free space region 36. Second free space region 36
is connected to a plurality of output waveguides 38.
[0031] Waveguides 26 and 38 serve as the input/output ports for the router. Stub waveguides
27, 29, 35, and 37 provide no input or output for the router and merely act to improve
optical power transfer to the extremity waveguides in the pluralities of waveguides
26, 30, 34, and 38.
[0032] Waveguides 26 and waveguides 38 are all within the central Brillouin zone of the
grating, which is known as the field of view for the grating. The input and output
waveguides receive first order diffraction optical energy within the router from the
grating waveguide region.
[0033] Angular opening 2γ of the central Brillouin zone is given by the following expression:
k·a ·sinγ =π, where
k equals 2π/λ,
a equals the spacing of the grating waveguides at the surface of the free space region
in the router, and λ is the optical signal wavelength. Similarly, the angle θ of the
first order diffraction is defined as
k·a·sin
θ =φ,|φ|<π, where φ is the phase difference of the optical signals between neighboring
grating waveguides. Angle θ is measured with respect to center axis 200 for the free
space region. Accordingly, the angle of the second order diffraction θ', which is
also measured with respect to center axis 200 of the free space region, is computed
as θ-2γ for θ>
0 and as θ+2γ for θ<
0. The longitudinal axis of the waveguide for capturing the second order diffraction
optical energy is disposed to intersect the surface of the free space region at angle
θ' from center axis 200. The frequency of the light captured by the latter waveguide
is substantially identical to the frequency of the first order diffracted light captured
by the waveguide whose longitudinal axis intersects the same free space region at
angle θ.
[0034] These waveguide grating routers operate as multiplexers and demultiplexers of optical
frequencies. The details of their construction and operation are more fully described
in the U.S. patents referred to above, the entire contents of which are hereby incorporated
by reference into this application. In the case of waveguide grating router 12 in
FIG. 1, input waveguides 26 are connected to the waveguides 14₁, 14₂, ..., 14
N, respectively and the plurality of output waveguides 38 are connected to the waveguides
16₁, 16₂, ..., 16
N.
[0035] In the prior art waveguide grating router shown in FIG. 2, N waveguides 26 are disposed
along an outer surface first free space region 28 to collect the first order diffraction
light associated with each of the N different wavelengths coupled by the router. There
is no higher order diffracted light coupled out of the free space region and delivered
to the output port of the waveguide grating router. In general, since the higher order
diffracted light at one of the N wavelengths is considered within the loss budget
of the router, the design of waveguide grating routers has been customized to reduce
the amount of light within the free space region propagating in second and higher
order diffraction modes.
[0036] In the present invention, the primary waveguides (e.g., waveguides 26 and 38) associated
with first order diffracted light from the free space regions of the waveguide grating
router are coupled to the output or input ports of the router together with a secondary
waveguide which serves as an output waveguide. The output waveguide is constructed
within the waveguide grating router to capture second order diffraction light at the
desired wavelength from one free space region of the router and then couple that captured
light to the router output.
[0037] FIG. 3 shows a simplified diagram of a modified portion of the waveguide grating
router having a secondary waveguide for capturing second order diffraction optical
energy realized in accordance with the principles of the present invention. The portion
of the waveguide grating router shown in FIG. 3 is the first free space region 28
and waveguide connections to one side of that free space region. Several primary waveguides
26 are shown as well as secondary waveguide 261. Each waveguide terminates at specific
locations on router 12 which connect to waveguides 14
i and 15 (shown in FIG. 4). For example, primary waveguide 26₁ terminates at the location
on router 12 to which waveguide 14₁ is connected. Similarly, primary waveguide 26₂
terminates at the location on router 12 to which waveguide 14₂ is connected. Waveguide
15 is connected to router 12 at the location where secondary waveguide 261 connects.
It is the latter waveguide, secondary waveguide 261, which is designed to capture
second order diffracted light from free space region 28 and deliver that captured
light to the output of the router. Assuming that the first order diffraction light
at the desired wavelength is captured by primary waveguide 26₁, the second order diffraction
light at the desired wavelength is captured by secondary waveguide 261. Primary waveguide
26₁ is associated directly with secondary waveguide 261 because both waveguides carry
light at the same wavelength.
[0038] The spacing between grating waveguides 30 at the free space region 28 is
a. Grating waveguides 30 have their center axes directed to focal point 204 for curved
surface 282. Primary waveguides 26 and secondary waveguide 261 have their axes directed
to center of curvature 205 for curved surface 281. Waveguide 26₁ is displaced from
the central axis of the free space region by an angle θ. In order to capture the second
order diffracted light at the desired wavelength, that is, at the same wavelength
found in waveguide 26₁, waveguide 261 is displaced along the output surface of the
free space region by an angle 2γ measured from the waveguide 26₁.
[0039] FIG. 4 shows a simplified schematic drawing of a tunable laser incorporating a modified
waveguide grating router realized in accordance with the principles of the present
invention and partially shown in FIG. 3. Router 12 as modified according to FIG. 3
captures the second order diffraction lasing optical energy F₁' at frequency F₁ and
delivers it to waveguide 15. Waveguide 15 is an output waveguide for the tunable laser
in that it supplies the light output beam 110 to the laser output. Element 17 is an
optional amplifier similar to waveguide optical amplifiers 18 and 22 for amplifying
the light output beam of the laser. Tuning of the laser is accomplished, as described
above, by pumping an appropriate pair of optical amplifiers with the bias current.
[0040] In this configuration, the intra-cavity loss of the laser is not increased. Second
order diffraction optical power which had previously been discarded is now being used
for output coupling. With high reflectivity mirrors in place on the primary waveguides,
first order diffraction optical energy is returned to the resonant cavity for lasing
rather than output coupling thereby increasing the laser efficiently.
[0041] FIG. 5 shows an alternative embodiment of the tunable laser of FIG. 4. In this embodiment,
optional enhancements are made to the laser shown in FIG. 4. For example, the laser
is shown with high reflectivity layers 115 and 118 for the resonant cavity, anti-reflective
layer 116 for the laser output port, and integrated on-chip modulator 117. It is contemplated
that one or all of these improvements can be incorporated into the present tunable
laser.
[0042] High reflectivity layers 115 and 118 such as multilayer dielectric stack mirror coatings
are applied to the reflective surfaces of the tunable laser. These layers are not
intended to extend over that portion of the reflective surface through which the desired
second order diffraction optical energy exits the laser. Instead, the highly reflective
layers extend over the portions of the reflective surfaces through which first order
diffraction light could exit the laser. It is contemplated that reflectivities significantly
higher than 30% and preferably near 100% can be used for layers 115 and 118.
[0043] Anti-reflective layer 116 is applied over that portion of the reflective surface
through which the desired second order diffraction light exits the laser. This layer
is realized in one embodiment by a multilayer dielectric stack mirror. Reflectivity
for the anti-reflective layer is contemplated to be less that 10% and preferably on
the order of 1%.
[0044] Element 117 can be an integrated on-chip optical modulator for directly modulating
the laser output beam before it leaves tunable laser 10. Of course, element 117 could
also include any combination of optical amplifier, optical polarization controller,
and optical modulator.
[0045] While the optical amplifiers are shown as the connections between the waveguides
14, 15 and 16 and their respective resonant cavity surfaces in the laser, it is contemplated
that the amplifiers or other elements such as a modulator can be formed at any point
along their respective waveguide as long as the angle or spacing between primary and
secondary waveguides equals 2γ. The angle γ is called the angle of the first Brillouin
zone since it limits the zone of first order diffraction.
[0046] Waveguides in the router and laser described above are desirably single mode waveguides.
It should be noted that one or more of these waveguides can be fabricated to operate
as multimode waveguides.
[0047] It is understood that, while the Group III-V material system InGaAsP/InP is described
above for fabricating the tunable laser, other material combinations may be selected
from other semiconductor Group III-V systems such as GaAs/InGaAs, InGaAs/InGaAlAs,
InGaAs/InAlAs, GaAs/AlAs, GaAsSb/GaAlAsSb and AlGaAs/GaAs to realize the tunable laser.
In these semiconductor systems, the layers may be lattice-matched to suitable GaAs
or InP substrates. Mismatching is also contemplated wherein strained layers are grown
over the substrate material. Finally, extension of the device structures to semiconductor
compounds in Group II-VI and Group IV is also contemplated.
[0048] In an example from experimental practice, the tunable laser has been realized with
an 8x8 waveguide grating router operating at a fundamental channel wavelength of 1562
nm. The interchannel wavelength spacing is 1.62 nm with an output channel power close
to 0 dBm. Losses from the router and output coupling are 8 dB and 4 dB, respectively.
The integrated modulator in the secondary output waveguide has been designed for 2.5
Gbps operation.
[0049] While a presently preferred embodiment of the invention employs amplifiers in waveguides
on both sides of the resonant cavity, it is contemplated that the router and waveguides
can be redesigned to employ amplifiers on a single side of the cavity. For example,
amplifiers 18 can be eliminated from the apparatus shown in FIG. 4 provided that only
one waveguide 14 is terminated on the reflective surface. Since the remaining waveguides
14 are not terminated on the reflective surface, those waveguides are not capable
of providing optical feedback to the cavity. In such a modified laser, it is only
necessary to activate one amplifier for generating a laser output beam at a desired
wavelength.
1. A laser tunable to at least one of N separate wavelengths including,
first and second reflective surfaces positioned opposite each other for defining a
resonant optical cavity there between
a waveguide grating router disposed within said resonant optical cavity having at
least one primary waveguide and one secondary waveguide, both on one side of said
router, and N input waveguides on an opposite side of said router, said primary waveguide
and said N input waveguides for capturing first order diffraction optical energy from
corresponding free space regions in said router, and said secondary waveguide for
capturing second order diffraction optical energy at the at least one wavelength,
the wavelength of optical energy in said primary and secondary waveguides being substantially
identical,
a plurality of selectively controllable optical amplifiers, each amplifier in series
with a corresponding waveguide from the group consisting of said N input waveguides
and said at least one primary waveguide, and
control means for pumping at least a pair of said selectively controllable optical
amplifiers to create a wavelength selective pathway through the router for laser operation
at the at least one wavelength said wavelength selective pathway optically connecting
both reflective surfaces.
2. A laser tunable to at least one of N separate wavelengths including,
first and second reflective surfaces positioned opposite each other for defining a
resonant optical cavity there between
a waveguide grating router disposed within said resonant optical cavity having at
least one primary waveguide and one secondary waveguide, both on one side of said
router, and N input waveguides on an opposite side of said router, said primary waveguide
and said N input waveguides for capturing first order diffraction optical energy from
corresponding free space regions in said router, and said secondary waveguide for
capturing second order diffraction optical energy at the at least one wavelength,
the wavelength of optical energy in said primary and secondary waveguides being substantially
identical,
a plurality of selectively controllable optical amplifiers, each amplifier in series
with a corresponding waveguide from said N input waveguides, and
control means for pumping at least one of said selectively controllable optical amplifiers
to create a wavelength selective pathway through the router for laser operation at
the at least one wavelength said wavelength selective pathway optically connecting
both reflective surfaces.
3. The laser as defined in claim 1 or claim 2 further comprising an optical modulator
in the secondary waveguide.
4. The laser as defined in any of the preceding claims wherein the reflectivity of said
first reflective surface is significantly reduced to make that surface anti-reflective
substantially where the light from the secondary waveguide impinges on the first reflective
surface.
5. The laser as defined in any of the preceding claims further including a selectively
controllable optical amplifier in series with said secondary waveguide and said control
means for pumping said amplifier in said secondary waveguide.
6. The laser as defined in any of the preceding claims wherein the first and second reflective
surfaces are highly reflective to reflect almost all optical energy impinging thereon
and wherein the reflectivity of said first reflective surface is significantly reduced
to make that surface anti-reflective substantially where the light from the secondary
waveguide impinges on the first reflective surface.
7. A tunable laser comprising,
a resonant laser cavity defined by two reflective elements in an actively doped semiconductor
wafer,
a frequency routing device formed in the cavity comprising a plurality of controllable
frequency selective pathways optically connecting the reflective elements such that
selective gating of one or more of the frequency selective pathways causes selected
one or more laser frequencies to be supported in the laser cavity to provide tunability
of the laser, and
a secondary pathway related to one of the frequency selective pathways for capturing
second order diffraction optical energy at the selected one or more frequencies, said
secondary pathway optically connected to at least one of the reflective elements.
8. The tunable laser as defined in claim 7 further comprising a plurality of optical
amplifiers in the frequency selective pathways.
9. The tunable laser as defined in claim 8 further comprising an optical amplifier in
said secondary pathway.
10. The tunable laser as defined in claim 8 further comprising an optical modulator in
the secondary pathway.
11. The tunable laser as defined in claim 8 further comprising a control circuit for selectively
activating the optical amplifiers to define a predetermined frequency selective pathway
in the laser cavity and to create lasing action in the predetermined frequency selective
pathway.
12. The tunable laser as defined in claim 11 further comprising an optical amplifier in
said secondary pathway
and wherein the control circuit activates the optical amplifier in the secondary pathway.
13. The tunable laser as defined in claim 12 wherein the first and second reflective elements
are highly reflective to reflect almost all optical energy impinging thereon and wherein
the reflectivity of said first reflective element is significantly reduced to make
that element anti-reflective substantially where the light from the secondary pathway
impinges on the first reflective element.