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(11) | EP 0 704 906 A3 |
| (12) | EUROPEAN PATENT APPLICATION |
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| (54) | Electrode of semiconductor device and method of fabricating thereof |
| (57) An electrode of a semiconductor device includes a semiconductor layer (6) having
a surface, a laminated structure laminating a plurality of layers comprising conductive
materials on the surface of the semiconductor layer (6) and having a side surface,
and a side barrier layer disposed on the side surface of the laminated structure and
comprising a conductive material which can prevent a conductive material of a specific
layer constituting the laminated structure except a lowermost layer in contact with
the semiconductor layer (6) reacting with the semiconductor layer (6) from diffusing
into the semiconductor layer (6) through the side surface of the laminated structure.
Therefore, the side barrier layer prevents the conductive material reacting with the
semiconductor layer (6) from diffusing into the semiconductor layer (6) through the
side surface of the laminated structure, and erosion of the semiconductor layer (6)
and deterioration of a contact between the electrode (4) and the semiconductor layer
(6) are not caused due to the reaction of the semiconductor layer (6) with the conductive
material, whereby the reliability of the semiconductor device in which this electrode
(4) is provided is improved. |