Field of the Invention
[0001] This invention relates to input circuits for use with photodiodes and more particularly
to input circuits which resonate the photodiode capacitance with an inductor in order
to improve the signal to noise ratio and to eliminate the detrimental influence of
background optical noise and interference.
Description of the Related Art
[0002] Hand-held infrared (IR) apparatus has become popular for many types of communications
applications. Such apparatus is frequently used in environments where the background
optical noise and interference can be much larger in magnitude than the desired signal.
Fluorescent lighting, for example, can exhibit intense amplitude modulation at twice
the line frequency and can have a rich harmonic content at multiples of 120 Hz. typically
extending out to several kilohertz. Superimposed on top of the basic AC line frequency
there may be much higher frequency optical components arising from switching transients
and voltage spikes on the AC power line originating in high speed, high power, switching
power supplies and motor controllers that are connected to the AC line and thereby
to fluorescent lighting. This high speed optical structure is essentially all gone
by about 200 KHz. The optical noise and interference arising from computer monitors
and TV sets, however, extend out past 500 KHz. For these reasons it is not desirable
to operate an IR link by directly modulating the IR optical source with the desired
data to be transmitted. Instead it is preferable to 100% amplitude modulate the IR
optical source at a high frequency (about 1 MHz. in the embodiment to be described
herein after), thereby forming an optical carrier, and then in turn to modulate this
optical carrier with the desired signal information.
[0003] The IR signal is usually detected by using one or several photodiodes. In order to
maximize the signal to noise ratio while simultaneously minimizing the effect of low
frequency interfering optical sources, it would in principle appear advantageous to
resonate the capacitance of the photodiode detector with an inductor. However, one
serious problem with this apparently simple approach is that these IR devices are
frequently hand-held and are powered by batteries, while the battery voltage itself
changes with time due to aging and discharge with use. As a result, the reverse bias
voltage applied to the photodiode detector changes thereby changing its capacitance
and correspondingly detuning the input tank LC circuit. Although the use of a Zener
diode, or other stabilizing means, to control the voltage that is applied to the photodiode
is a theoretical possibility, this would be more complex and a wasteful use of power
in hand held apparatus that is to be used over extended periods of time.
[0004] In addition to the detuning issue there is a second potentially equally serious problem
with the apparently advantageous scheme of simply resonating the photodiode capacitance
with an inductor to form an input LC tuned circuit. this arises from the fact that
such an input-tuned circuit is automatically narrow banded by the Q factor of the
tank (where Q is defined as the tank resonant frequency divided by its half amplitude
response bandwidth). As a result an IR link using the proposed scheme would apparently
in principle be limited to low data rates, corresponding to its input-tank bandwidth.
Sunmary of the Invention
[0005] The problem of providing an input circuit with high signal to noise ratio for an
infrared receiver using a photodiode detector that is also immune to changes in the
battery voltage, is solved by the present invention wherein a photodiode is in parallel
with an inductor to form a resonant tank circuit at a carrier frequency. The signal
across this tank circuit is coupled to an inverting amplifier having a specially chosen
feedback capacitor. The value of the feedback capacitor is chosen from the gain versus
voltage characteristics of the inverting amplifier in such a way as to compensate
for changes that result from changing capacitance of the photodiode detector.
[0006] It is an additional inherent aspect of the present invention that an input signal
having a broader bandwidth can be accommodated by lowering the Q of the resonant tank
circuit through the use of a resistor of a specially chosen value connected in parallel
with the feedback capacitor. It is the resistive part of the input impedance of the
inverting amplifier which serves to lower the Q, by active damping, and it does so
in such a way as to introduce very much less Johnson noise (typically by a factor
of 3 or more) than would be the case of obtaining the same damping by physically connecting
an actual resistor across the resonant tank. This therefore corresponds to broad-banding
an LC tank without paying the corresponding noise penalty that would be occasioned
by the use of a passive damping resistor.
[0007] If the tank must be broad-banded (for data rate improvement) to the point where the
system is susceptible to lower frequency optical interference, additional filtering
may be added in accordance with the present invention following the inverting amplifier
that produces the combined effect of damping and capacitance cancellation.
Brief Description of the Drawing
[0008] Fig. 1 is a schematic diagram of a circuit constructed in accordance with the present
invention.
Description of the Preferred Embodiment
[0009] In Fig. 1 an input infrared light beam 120, having a carrier which has been modulated
with information to be detected, is caused to impinge on a photodiode 101. Although
photodiode 101 is shown as a single diode, it can if desired be composed of a plurality
of photodiodes connected in parallel in order to maximize the amount of photo current
generated by the light beam and to accommodate the reception of light from various
angles and distances. In the embodiment which was constructed, for example, eight
Siemens type BPW34FA photodiodes were connected in parallel, yielding a total light
receiving area of 0.56 cm and an operating capacitance of about 170 pf. with the back-bias
potential provided. Optical filters that pass infrared (IR) and attenuate visible
light are built in to the BPW34FA photodiodes that were used. This tends to ameliorate
the problem of lower frequency optical interference from fluorescent lights. However
the amplifier circuitry following the photodiodes, even with the filters, still has
to handle from tens, up to as much as hundreds, of microamperes of sometimes strongly
modulated DC leakage current due to the background light. This background photo current
is typically hundreds to many thousands of times larger than the actual signal current
of interest.
[0010] An attractive way to solve the problem of background current is to simply resonate
the photodiode capacitance with a suitable inductor to form a tank circuit at the
optical carrier frequency (1 MHz. in the embodiment constructed). This approach automatically
in effect throws away all of the unwanted modulated background light photocurrent,
leaving only its shot noise contribution around the carrier frequency. However, there
are two serious problems with this apparently attractive approach. As the battery
voltage changes the photodiode capacitance also changes and this results in a change
in the resonant frequency of the tank circuit, essentially detuning the receiver and
reducing the amount of signal received. In addition, one would like to have the tank
circuit have as high a Q as possible in order to have as high a signal to noise ratio
as possible. If, however, the carrier is modulated in a way so as to generate wide
sidebands, the Q of the tank circuit may have to be lowered in order to broaden the
bandwidth of the input circuit. If one attempts to achieve this by simply connecting
a resistor directly in parallel with the tank circuit, the reduction in signal to
noise ratio (arising from the resistor Johnson noise) may be unacceptable.
[0011] In Fig. 1, the biasing voltage for photodiode 101 is supplied from a positive potential
source 104, V
s, through a resistor 102 to the cathode of photodiode 101. A capacitor 103 is connected
between the cathode of the photodiode and ground potential to provide a low-pass filtering
action with resistor 104 which attenuates any unwanted noise components that may be
present on power supply terminal 104. The anode of photodiode 101 is connected through
inductor 105 to ground potential. Since capacitor 103 provides a low impedance at
the carrier frequency, photodiode 101 and inductor 105 are essentially connected in
parallel to form a parallel resonant circuit at the carrier frequency.
[0012] The signal at the carrier frequency, bearing the modulated data of interest, is coupled
from the junction of photodiode 101 and inductor 105 to the input of an inverting
amplifier 108. The power input to amplifier 108 is connected by way of line 118 to
receive the filtered potential available at the cathode of photodiode 101, and line
119 completes the power connection to ground for amplifier 108. The output of amplifier
108 on line 117 is connected both to one terminal of a feedback capacitor 106 and
to one terminal of a feedback resistor 107. The other terminals of capacitor 106 and
resistor 107 are connected to the inverting input of amplifier 108 to form a negative
feedback arrangement. In the embodiment which was constructed, amplifier 108 was implemented
with an inverted cascode amplifier having a gain of 40 by using a Motorola MPSA18
NPN transistor input stage. This amplifier exhibited an input series noise spectral
density of 3.5 nV/(Hz.)
1/2 and negligible phase shift at the operating frequency of 1 MHz. As a result of the
feedback arrangement capacitor 106 and resistor 107, respectively, cause the generation
of an input impedance having capacitive and resistive components across a resonant
tank circuit including photodiode 101 and inductor 105. The capacitive component influences
the resonant frequency of the tank circuit, and inductor 105 is preferably an adjustable
inductor which can be changed to provide the correct tank resonant frequency. The
resistive component of the amplifier effective input impedance advantageously reduces
the Q in a manner to be described herein after.
[0013] For abrupt p-n junctions, of the type most often used for photodiodes, the depletion
layer thickness is essentially proportional to the square root of the total reverse
bias voltage V
b. Accordingly the photodiode capacitance C
d is proportional to the reciprocal of the battery voltage:

As a result, the relationship between small changes in the photodiode capacitance
and changes in the battery voltage can be expressed as follows:

The capacitive component of the input impedance is equal to (G+1) times the feedback
capacitor C
f. Since the gain G is much greater than 1, the capacitive component of the input impedance
can be approximated as (GC
f) . Since the capacitance of the photodiode and the capacitive component of the input
impedance are in parallel, one would like any change in the photodiode capacitance
to be compensated for by a corresponding negative change in the capacitive component
of the input impedance:

Solving the latter equation for C
f and substituting for the value of ΔC
d from the above equation, the following relationship must be satisfied in order to
obtain the desired compensation:

For the inverted cascode amplifier of the type used in the construction of the present
embodiment, the gain G is proportional to (V
b-V
o), where V
o is a constant voltage of about 1 volt representing the collector voltage of the MPSA18
input stage. Accordingly, for an inverted cascode amplifier of the type used in the
embodiment which was constructed, the change in gain versus change in battery voltage
can be expressed by the following equation:

Substituting the latter equation into the above equation for C
f, the following equation for an inverted cascode amplifier is obtained:

In the embodiment which was constructed where C
d was equal to 170 pf., G was about 40, the battery voltage was about 5 volts, and
V
o was about 1 volt, the value for C
f was 1.7 pf. With this value of feedback capacitor, changes in the photodiode capacitance
due to changes in the battery voltage are automatically cancelled by changes in the
capacitive component of the input impedance, and the tank circuit resonant frequency
becomes essentially independent of battery voltage. For the system constructed the
shift in the input tank resonant frequency was found to be negligible over the desired
range of supply voltages of 4 to 6 volts.
[0014] As pointed out herein above, the processing of an input carrier signal which requires
a wide bandwidth may require that the bandwidth of the input tank circuit be broadened
by damping the tank circuit. Feedback resistor 107 provides a resistive component
to the input impedance of amplifier 108 which in turn provides this damping, and it
does so in a way that does not result in the introduction of as large an amount of
Johnson noise as would be the case if the tank circuit were simply damped by a parallel
resistor. (A theoretical discussion of the advantages of using a feedback resistor
to damp an input circuit can be found in the article entitled " Signal, Noise and
Resolution in Position-Sensitive Detectors", by V. Radeka, IEEE trans. Nuc. Sci. NS-21,
No. 1, February, 1974.)
[0015] In the present embodiment which was constructed, a feedback resistor of 120 K Ohms
and an amplifier gain of 40 resulted in a resistive portion of the input impedance
of 3000 Ohms. This 3 K Ohms of damping results in an advantageously low Q of only
5 for the input tank used, and computer analysis confirmed that the noise performance
was three times better than that possible by the use of passive damping. The resulting
over all receiver noise was negligible compared to the noise due to the many microamperes
of photocurrent typically arising from background light.
[0016] Since the input tank bandwidth is quite large in the embodiment which was constructed,
the receiver still had a significant gain at lower frequencies where large quantities
of modulating interfering signals can still exist. Accordingly, the output of amplifier
108 is connected by way of line 117 to the base of a common emitter stage using NPN
transistor 109. This stage of amplification using transistor 109 has two additional
methods of interference filtering.
[0017] The base of transistor 109 is connected to a constant current sink 110 to bias the
transistor. Also connected from the emitter of transistor 109 to ground potential
is a series circuit consisting of capacitor 111 and resistor 220. The value of capacitor
111 is chosen such that it presents a significant impedance at low frequencies but
is insignificant relative to the value of resistor 220 at the carrier frequency. Accordingly,
the gain provided by transistor 109 at frequencies lower than the carrier frequency
is considerably reduced.
[0018] In addition, the collector of transistor 109 is connected to a parallel resonant
circuit consisting of inductor 114 and capacitor 115, the other end of which is connected
to the positive potential source 104. This parallel resonant circuit is chosen to
resonate at the carrier frequency and is damped by the action of resistor 116 which
is connected in parallel with the resonant circuit in order to maintain the proper
bandwidth.
[0019] Finally, a capacitor 113 couples the signal at the carrier frequency to an output
terminal which can be connected to further stages of amplification, followed by appropriate
demodulation, using standard techniques that are well known in the radio receiver
and data communications arts. In particular it is noteworthy that the resonant, capacity
cancelling, actively damped IR receiver approach that is described herein is advantageously
compatible with all three of the standard modulation techniques, namely frequency
shift keying (FSK), phase shift keying (PSK), and amplitude shift keying (ASK). In
particular if FSK is used (as was in the case of the present system) the receiver
of Figure 1 can be used to drive a standard low-cost FM radio receiver chip such as
the Motorola MC3359. This chip incorporates a standard quadrature demodulator which
can be used to recover the signal information. An even better approach is to use the
demodulator described in my copending patent application entitled, "Phase Locked Quadrature
Demodulator".
[0020] What has been described herein is an illustrate embodiment of the present invention.
Numerous departures may be made by those skilled in the art without departing from
the spirit and scope of the present invention. For example, an inverting amplifier
configuration other than the cascode can be used to provide compensation for the change
in capacitance of the photodiode. One simply has to analyze the amplifier to determine
its change in gain versus change in battery voltage characteristic and use that relationship
in the above-identified equation to obtain the required value of the feedback capacitor.
1. A photodetector circuit for use in extracting an output signal from a modulated optical
carrier of frequency fo, said circuit to be connected to a voltage supply Vb which is subject to a change ΔVb in voltage, said circuit comprising a photodetector diode having a capacitance of
Cd at the nominal voltage of Vb, an inductor, means for connecting said photodetector diode and said inductor such
that said photodetector diode and said inductor are in parallel at said frequency
fo and said photodetector diode is back-biased by said voltage supply, the capacitance
of said photodetector diode being subject to change with changes in the voltage from
said voltage supply, and an inverting amplifier having an input and an output and
a change in gain ΔG versus change in voltage supply ΔVb characteristic of (ΔG/ΔVb), means for connecting the input of said amplifier to the parallel resonant combination
of said photodetector diode and said inductor, characterized in that said circuit
further includes an impedance connected between the input and output of said amplifier,
said impedance having a capacitive element Cf which provides a capacitive component to the input impedance of said inverting amplifier,
thereby resulting in a parallel resonant tank circuit consisting of the photodetector
diode, the inductance, and said capacitive component.
2. A photodetector circuit as defined in claim 1 wherein said capacitive element C
f substantially satisfies the following equation:
3. A photodetector circuit as defined in claim 1 wherein said inverting amplifier is
an inverted cascode amplifier whose gain G is proportional to (V
b-V
o) where V
o is a constant voltage of about 1 volt, and said impedance capacitive element C
f substantially satisfies the following equation:
4. A photodetector circuit as defined in claim 1, 2, or 3 wherein said impedance also
includes a resistive element, said resistive element resulting in a resistive component
to the input impedance of said inverting amplifier, said resistive component resulting
in a lower Q of said parallel resonant tank circuit.
5. A photodetector circuit for use in extracting an output signal from a modulated optical
input of carrier frequency fo, said circuit to be connected to a voltage supply Vs which is subject to a change in voltage, said circuit comprising a photodetector
diode, an inductor connected in series with said photodetector diode, low-pass filtering
means for connecting said voltage supply to the series combination of said photodetector
diode and said inductor such that said photodetector diode is back-biased by a voltage
of Vb from said voltage supply, the capacitance of said photodetector diode being subject
to change with changes in voltage from said voltage supply, and an inverting amplifier
having an input and an output and powered by said voltage Vb, said amplifier having a change in gain ΔG versus change in voltage supply ΔVb characteristic of (ΔG/ΔVb), means for connecting the input of said amplifier to the junction of said photodetector
diode and said inductor, characterized in that said circuit further includes an impedance
connected between the input and output of said amplifier, said impedance having a
capacitive element Cf which provides a capacitive component to the input impedance of said inverting amplifier,
thereby resulting in a parallel resonant tank circuit consisting of the photodetector
diode, the inductance, and said capacitive component.
6. A photodetector circuit as defined in claim 5 wherein said impedance also includes
a resistive element, said resistive element resulting in a resistive component to
the input impedance of said inverting amplifier, said resistive component resulting
in a lower Q for said parallel resonant tank circuit, whereby said resistive component
provides low noise damping.
7. A photodetector circuit as defined in claim 6 wherein said circuit further includes
an NPN transistor having a base, emitter and collector electrode, said NPN transistor
being connected in a common emitter arrangement with its base connected to the output
of said inverting amplifier, a high impedance current sink connected between said
emitter electrode and ground potential, a series circuit consisting of a capacitor
and resistor connected between said emitter electrode and ground potential, and a
collector impedance connected between said collector electrode and said voltage supply,
whereby said output signal is available from said collector electrode.
8. A photodetector circuit as defined in claim 7 wherein said collector impedance includes
a damped parallel resonant circuit having a resonant frequency substantially equal
to fo.
9. A photodetector circuit as defined in claim 8 wherein said capacitive element C
f substantially satisfies the following equation:
10. A photodetector circuit as defined in claim 8 wherein said inverting amplifier is
an inverted cascode amplifier whose gain G is proportional to (V
b-V
o) where V
o is a constant voltage of about 1 volt, and said impedance capacitive element C
f substantially satisfies the following equation: