PROCESS FOR THE ANISOTROPIC AND SELECTIVE DRY ETCHING OF NITRIDE OVER THIN OXIDES - Patent 0739537

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EP 0 739 537 A1

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(43)	Date of publication:
	30.10.1996 Bulletin 1996/44

(21)	Application number: 95943617.0

(22)	Date of filing: 13.11.1995

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International Patent Classification (IPC):

H01L 21/ 311^{( . )}

H01L 21/ 66^{( . )}

(86)	International application number:
	PCT/US1995/015474

(87)	International publication number:
	WO 1996/016433 (30.05.1996 Gazette 1996/25)

(84)	Designated Contracting States:
	DE FR GB

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Priority:

10.11.1994 US 19940337303

(71)	Applicant: NATIONAL SEMICONDUCTOR CORPORATION
	Sunnyvale, CA 95086-3737 (US)

(72)	Inventors:
	HEBERT, François Sunnyvale, CA 94089 (US) BASHIR, Rashid Santa Clara, CA 95051 (US)

(74)	Representative: Bowles, Sharon Margaret, et al
	BOWLES HORTON Felden House Dower Mews High Street Berkhamsted Hertfordshire HP4 2BL Berkhamsted Hertfordshire HP4 2BL (GB)

(54)	PROCESS FOR THE ANISOTROPIC AND SELECTIVE DRY ETCHING OF NITRIDE OVER THIN OXIDES