|
(11) | EP 0 744 776 A3 |
| (12) | EUROPEAN PATENT APPLICATION |
|
|
|
|
|||||||||||||||||||
| (54) | Amorphous silicon thin film transistor and method preparing same |
| (57) The disclosure relates to an amorphous silicon thin film transistor. The transistor
includes a substrate, a gate electrode formed on the substrate, an insulating film
formed on the substrate, a hydrogenated amorphous silicon film formed on the insulating
film, a non-doped microcrystal silicon film formed on the amorphous silicon film;
and source and drain electrodes which are formed on the microcrystal silicon film.
In the transistor, there is provided an ohmic contact between the source and drain
electrodes through the microcrystal silicon film. The insulating film optionally has
an etched surface layer prepared by etching the insulating film which has been formed
on the substrate, with an aqueous solution containing HF. The TFT can be produced
in a simple manner with safety and with a simple equipment. |