| (19) |
 |
|
(11) |
EP 0 751 699 A3 |
| (12) |
EUROPEAN PATENT APPLICATION |
| (88) |
Date of publication A3: |
|
07.05.1997 Bulletin 1997/19 |
| (43) |
Date of publication A2: |
|
02.01.1997 Bulletin 1997/01 |
| (22) |
Date of filing: 19.06.1996 |
|
|
| (84) |
Designated Contracting States: |
|
DE FR GB |
| (30) |
Priority: |
26.06.1995 US 495064
|
| (71) |
Applicant: Hewlett-Packard Company |
|
Palo Alto,
California 94304 (US) |
|
| (72) |
Inventors: |
|
- Samuels, Brian C.
Fremont, CA 94539 (US)
- Mueller, Gerd O.
San Jose, CA 95132 (US)
- Mueller-Mach, Regina B.
San Jose, CA 95132 (US)
|
| (74) |
Representative: Powell, Stephen David et al |
|
WILLIAMS, POWELL & ASSOCIATES
34 Tavistock Street
London WC2E 7PB
London WC2E 7PB (GB) |
|
| |
|
| (54) |
Method and device for sealing of a thin film electroluminescent device |
(57) A method of forming a seal for a thin film electroluminescent device (10) includes
using deposition techniques (36) to form an integral thin film encapsulating layer
(26; 28). Plasma enhanced chemical vapor deposition is utilized, allowing the formation
of the seal to take place at substantially room temperature. A pre-bake (34) is performed
at an elevated temperature in an evacuated environment prior to the formation of the
thin film encapsulating layer. A silicon nitride film my be used as a single-film
encapsulating layer, or may be used with another material (30) in the fabrication
of a multi-film encapsulating layer.