|
(11) | EP 0 762 486 B9 |
| (12) | CORRECTED EUROPEAN PATENT SPECIFICATION |
| Note: Bibliography reflects the latest situation |
|
|
| (54) |
Etching of nitride crystal Ätzung von Nitridkristallen Gravure de cristaux de nitrure |
|
|
|||||||||||||||||||||||||||||||
| Note: Within nine months from the publication of the mention of the grant of the European patent, any person may give notice to the European Patent Office of opposition to the European patent granted. Notice of opposition shall be filed in a written reasoned statement. It shall not be deemed to have been filed until the opposition fee has been paid. (Art. 99(1) European Patent Convention). |
[0001] The invention relates to a method of gas-phase etching Group III-nitride crystals to produce an etched surface having an excellent surface quality. The invention also relates to a regrowth method that is performed after the gas-phase etching. In particular, the invention relates to a method of gas-phase etching and regrowth for Group III-nitride crystals. The method can be used to fabricate diodes or semiconductor lasers that emit ultraviolet to green light, light detectors, transistors for use at high temperatures, and semiconductor elements. Additionally, the methods are well suited for use in mass production, are low in cost and result in high yields.
[0002] Compared to AlGaAs crystals and other typical III-V crystals such as AlGaInP or GaInAsP, Group III-nitride crystals such as GaN are extremely difficult to etch. A variety of etching methods have been proposed. These methods are broadly classified into wet etching and dry etching. For example, wet etching places the surface of the GaN crystal to be etched in contact with a wet etchant, such as sodium hydroxide solution.
[0003] In one example of dry etching, the surface of the GaN crystal to be etched is irradiated with a plasma of ions, for example, Ar ions.
[0004] Recently, a report in 64 APPL. PHYS. LETT. (17), 25 April 1994, entitled Low Bias Electron Cyclotron Resonance Plasma Etching of GaN, AIN, and InN, proposed that Cl2/H2 or CH4/H2/Ar plasma irradiation be used to etch the surface of Group III-nitride crystals such as GaN, AIN, and InN. This technique can also be classified as dry etching.
[0005] Wet etching has a slow etch rate, even when a high-temperature etchant is used, and produces a rough etched surface. This makes it difficult to regrow a high-quality crystal on the etched surface using, for example, metal-organic chemical vapor deposition (MOCVD) or hydride vapor phase epitaxy (HVPE). Thus, additional processing is necessary to improve the flatness of the etched surface before MOCVD or HVPE can be performed.
[0006] On the other hand, dry etching uses a mechanical etchant instead of a chemical etchant, and has a fast etch rate. However, dry etching not only results in a rough etched surface, but also tends to damage the structure of the crystal. This leads to a concern that devices made from a crystal whose structure has been damaged by dry etchng will have degraded operating characteristics and a shortened lifetime.
[0007] Therefore, a new method for etching Group III-nitride crystals is required. The method should have a rapid etch rate, produce a smooth etched surface and should not damage the structure of the crystal.
[0008] Patent Abstracts of Japan, volume 16, no. 423 (E-1260), 7 September 1992 and JP 04146619A, 20 May 1992 teach a method of forming diamond or boron nitride thin films on a substrate. The teaching includes pre-treating the surface of the substrate to remove impurities by treating with a chlorine or fluorine gaseous mixture when the substrate is at a high temperature.
[0009] Patent Abstracts of Japan, volume 10, no. 221 (E-424), 2 August 1986 and JP 61056474 A, 22 March 1986 teach the manufacture of a GaN semiconductor device. In order to form electrodes on a lower GaN layer, a heat treatment is carried out at 500°C in a gas atmosphere containing hydrogen chloride gas to form an aperture in a higher GaN layer.
[0011] According to an aspect of the present invention, there is provided a method of gas-phase etching a Group III nitride crystal as specified in claim 1.
[0012] The method does not use plasma irradiation in contrast to the conventional dry etching technologies described above. Moreover, the invention can provide a method of gas-phase etching Group III nitride crystals that does not damage the crystal structure, and that can produce an etched surface with excellent surface quality and on which high-quality regrowth is possible.
[0013] The preferred method can be used to fabricate light-emitting diodes or semiconductor lasers that emit ultraviolet to green light, light detectors, transistors for use at high temperatures, and other semiconductor elements. The method is well suited for use in mass production, has low cost and results in a high yield.
[0014] The present invention can also provide a method in which regrowth is performed on the etched surface immediately after the etching operation and results in high performance elements.
[0015] In the preferred gas-phase etching method, a gas-phase etchant is provided. The gas-phase etchant includes at least one halogen in gaseous form and/or at least one halogen hydride in gaseous form. A Group III nitride crystal is heated to a temperature in the range of 500-900°C and is etched in a flow of the gas-phase etchant. The gas-phase etchant additionally includes hydrogen. The gas-phase etchant may alternatively be diluted with inert gas, and the Group III nitride crystal may be etched in a flow of the gas-phase etchant diluted with the inert gas.
[0016] In the regrowth method of the present invention, regrowth is immediately performed on the etched surface provided by the gas-phase etching method of the present invention. Since the gas-phase etching method according to the invention is compatible with the type of reactor used to perform MOCVD or HVPE, the regrowth can be performed in the same reactor as that in which the gas-phase etching was performed. Performing the etching and the regrowth in the same reactor saves having to transfer the newly-etched crystal to another reactor to perform the regrowth, and reduces the risk of contamination of the etched surface prior to the regrowth being performed.
[0017] The gas-phase etching and regrowth method can be applied to such Group III nitride crystals as GaN, AIN, InN, GalnN, AllnN, AIGaN, AlGalnN, or BAlGalnN. The benefits set forth above are easily obtained using these Group III nitrides.
[0018] The gas-phase etchant may be composed of at least one of the halogens, i.e. F2, Cl2, Br2, and I2, in gaseous form, and/or at least one of their hydrides, i.e. HF, HCI, HBr, and HI in gaseous form, with hydrogen.
[0020] An embodiment of the present invention is described below, by way of example only, with reference to the accompanying drawings, in which:
[0021] Figure 1 is a schematic view of an example of a reactor that can be used to perform the preferred gas-phase etching method.
[0022] Figure 2 shows how an etch mask is applied to the sample prior to etching using the preferred gas-phase etching method:
[0024] Figure 4 shows the sample illustrated in Figure 3 after it has been etched using the preferred gas-phase etching method.
[0025] Figure 5A is a copy from a video printer (150 x magnification) of the etched surface obtained using the preferred gas-phase etching method.
[0026] Figure 5B is a copy of a photomicrograph of the etched surface obtained using a conventional etching method.
[0027] Figure 6 shows how the etching depth measured after one hour varies with the concentration of the HCI gas in the gas-phase etchant at a given temperature.
[0028] The preferred gas-phase etching method for Group III nitride crystals provides an excellent etched surface quality by etching the Group III nitride crystal under specific high temperature conditions in flow of a specific gas-phase etchant that includes specific components. No plasma irradiation is used in the preferred gas-phase etching method, which can be easily be performed using the same type of reactor as is used for performing MOCVD or HVPE. This enables regrowth to be performed using MOCVD or HVPE immediately after the etched surface has been formed without having to transfer the Group III nitride crystal to another reactor. Using the same reactor prevents an oxide film or a carbon film, which would obstruct regrowth, from being formed on the etched surface, and prevents contamination of the regrowth interface with impurities.
[0029] In the preferred gas-phase etching method, a gas-phase etchant is provided. The gas-phase etchant includes at least one halogen in gaseous form and/or least one halogen hydride in gaseous form. A Group III nitride crystal is heated to a temperature in the range of 500-900°C and is etched in a flow of the gas-phase etchant. The gas-phase etchant additionally includes hydrogen. The gas-phase etchant may alternatively be diluted with inert gas, and the Group III nitride crystal may be etched in a flow of the gas-phase etchant diluted with the inert gas.
[0030] The regrowth method enables regrowth to be immediately performed on the etched surface provided by the gas-phase etching method.
[0031] The gas-phase etchant is composed of at least one of the halogens, i.e., F2, Cl2, Br2, and I2, in gaseous form, and/or at least one of their hydrides, i.e., HF, HCI, HBr, and HI, in gaseous form, with hydrogen.
[0033] When the gas-phase etchant includes hydrogen and at least one halogen in gaseous form and/or at least one halogen hydride in gaseous form, the gas-phase etchant etches the Group-III nitride crystal using the reactions described by the formulas (a) and/or (b) shown below. The preferred mixture ratios of the constituents of the gas-phase etchant are those which provide the quantities of halogen and hydrogen that are needed in the reactions described by formulas (a) and (b). In formulas (a) and (b), GaN is used as an example of the Group III-nitride.
where X denotes a halogen.
[0034] The ammonia (NH3) generated in the reactions described by the formulas (a) and (b) further reacts with the halogen and the hydrogen or the halogen hydride of the gas-phase etchant to generate ammonium halide (NH4X). Therefore, is is preferable that the mixture ratio be determined to take account of the additional quantities of halogen, hydrogen, and/or halogen hydride consumed by this additional reaction.
[0035] The constituent gases of the gas-phase etchant may be mixed prior to supplying the gas-phase etchant to the reactor in which etching is carried out. Alternatively, the constituent gases may be supplied to the reactor separately and mixing to form the gas-phase etchant may occur in the reactor.
[0036] The flow rate of the gas-phase etchant supplied to the reactor should be that which causes the above-mentioned etching reaction to proceed at such a rate that the GaX3 or NH3 by-products generated by the reaction can easily be exhausted from the reactor. The rate at which the reaction by-products are exhausted from the reactor is related to the characteristics of the equipment used (for example, the size of the reaction pipe and/or the performance of the exhaust system), the size of the Group III-nitride crystal being etched, and the amount of etching. However, a flow rate in the range of about 0.1 milliliters per second (mℓ/s) to 10 liters per second (ℓ/s) is preferred for the gas-phase etchant when a reaction pipe diameter of 80 mm is used.
[0037] When any of the gas-phase etchants described above, and irrespective of whether the gas-phase etchant is diluted with inert gas, best etching results are obtained with the temperature of the Group III-nitride crystal in the range of 500 to 950°C. A temperature less than 500°C results in too slow an etch rate to be practical. A temperature above 950°C results in too fast an etch rate, increases the possibility that the surface quality of the etched surface will be impaired, and degrades the flatness of the etched surface.
[0038] The gas-phase etchants described above, irrespective of whether they are diluted with inert gas, are preferably used at atmospheric pressure, but excellent etching of Group III-nitride crystals can still be obtained at lower or higher pressures. However, because of the equipment structure and operational convenience, performing the etch at atmospheric pressure provides advantages in terms of manufacturing cost.
[0039] The preferred regrowth method should be performed immediately after a surface of the Group III nitride crystal has been etched using the gas-phase etching method described above. In other words, as will be described below, the basic structure of the reactor used for performing the gas-phase etching method is the same as that of the reactor used to perform conventional regrowth methods such as MOCVD or HVPE. Consequently, after the gas-phase etching has been completed, the Group III nitride crystal with the etched surface is not removed from the reactor in which the gas-phase etching was performed, but is then immediately subject to the regrowth method.
[0040] When the regrowth method is used, etching and regrowth can be performed in the same reactor. In other words, the regrowth method is performed on the Group III-nitride crystal after it has been etched without removing the crystal from the reactor and without allowing the etched surface to come into contact with the atmosphere. This prevents such problems as the growth of an oxide film or a carbon film on the etched surface, which obstructs regrowth, or the introduction of impurities at the regrowth interface.
[0041] The reactor shown in Figure 1, for example, can be used to perform the gas-phase etching and regrowth method using any of the gas-phase etchants described above. The preferred gas-phase etching and regrowth method is performed according to the following procedure. Two gas cylinders 71 and 72, inert gas cylinders (not shown), and a supply source (not shown) of each type of material needed during regrowth are set up. Gas from the gas cylinders 71 and 72, and the inert gas cylinders are mixed in the specified ratios and are diluted, if necessary, immediately before being introduced to the reactor 1.
[0042] The procedure used when the gas-phase etchant includes hydrogen, as described above, will now be described. The gas cylinder 71 contains at least one halogen in gaseous form and/or at least one halogen hydride in gaseous form. The gas cylinder 72 contains hydrogen. Since halogens and halogen hydrides are corrosive, the gas in the gas cylinder 71 may be diluted with hydrogen or a suitable inert gas.
[0043] The Group III-nitride crystal 100 grown on a substrate such as sapphire is loaded on the susceptor 2 provided in the reactor 1. In the following description, a GaN crystal will be used as an example of the Group III-nitride crystal 100. However, the method can be applied to other Group III-nitride crystal. The thermocouple 3 is set to measure the temperature of the crystal 100 on the susceptor 2.
[0044] Prior to etching, the GaN crystal 100 is masked by suitable masking material to define the parts of the crystal that will be etched. For example, SiO2 or a two-layer film of Au (top layer) and Ti (bottom layer) may be used as the masking material.
[0045] The valve 4 is opened, and the vacuum pump 5 is operated to exhaust the interior of the reactor 1. The valve 4 is then closed, and the valve 61 and/or the valve 62 are opened to supply the gas in the gas cylinders 71 and 72 to the interior of the reactor. This purges the interior of the reactor.
[0046] The pressure in the reactor 1 during the purge operation and the subsequent etching operation is set to atmospheric pressure by keeping the valves 61, 62 and 63 open, and using the mass flow controllers 91 and 92 to adjust the flow rates of the gases constituting the gas-phase etchant so that a steady flow of the gas-phase etchant is provided at substantially atmospheric pressure.
[0047] With the gases constituting the gas-phase etchant flowing as just described, the interior of the reactor 1 is heated by the heat source 8 placed in or near the reactor. As the GaN crystal 100 is heated, its temperture is measured by the thermocouple 3. Heating continues until the GaN crystal reaches a specified temperature within the range of 500° to 950°C. When the temperature of the GaN crystal is within this range, the gases constituting the gas-phase etchant etch the GaN crystal according to the reactions defined by the formulas (a) and/or (b) set forth above. The GaN crystal is etched where its surface is not masked and contacts the gas-phase etchant.
[0048] The NH3 generated by the etching reaction reacts again with the gas-phase etchant in the reactor 1 to form NH4X. The NH4X, any NH3 that did not react with the gas-phase etchant, the GaX3 and any other volatile compounds created by the etching reaction are discharged to the outside through valve 63 along with excess gas-phase etchant (primarily, hydrogen) not consumed by the etching reaction.
[0049] The etching reaction just described continues until the required etching depth has been reached. The flow of the gas-phase etchant is then discontinued.
[0050] Since the reactor 1 has the same basic structure as the reactor used for performing MOCVD or HVPE, when MOCVD or HVPE is performed to perform the regrowth method on the etched surface as described above, the GaN crystal 100 can remain loaded on the susceptor 2 at the end of the etching process. The GaN crystal 100 can then undergo regrowth by MOCVD or HVPE without being removed from the reactor 1. The MOCVD or HVPE process used to perform the regrowth on the etched surface is conventional and so will not be described here.
[0051] For illustration purposes only the procedure for etching the GaN crystal 100 using the gas-phase etchant including at least one halogen in gaseous form and/or at least one halogen hydride in gaseous form will be described next. Since this procedure is almost identical to that using the gas-phase etchant including at least one halogen in gaseous form and/or at least one halogen hydride in gaseous form and additionally including hydrogen, only the parts of the procedure that are different will be described.
[0052] To simplify the following explanation, the gas cylinder 71 will be regarded as being the gas cylinder that contains the at least one halogen in gaseous form and/or at least one halogen hydride in gaseous form.
[0053] The at least one halogen in gaseous form and/or at least one halogen hydride in gaseous form is introduced into the reactor 1 from the gas cylinder 71 by opening the valves 61 and 63. The at least one halogen in gaseous form and/or at least one halogen hydride in gaseous form constituting the gas-phase etchant etch the GaN crystal according to the reactions defined by the formulas (b) and/or (c) set forth above, depending on the gas-phase etchant used. The GaN crystal is etched where its surface is not masked and contracts the gas-phase etchant.
[0054] The NH3 created by the etching reaction further reacts with the gas-phase etchant in the reactor 1 and becomes ammonium halide NH4X. The NH4X, NH3, GaX3, N2, and other products of the reaction are discharged outside the reactor through the valve 63, together with the excess gas-phase etchant that was not consumed by the etching reaction.
[0055] The etching reaction just described continues until the required etching depth has been reached. The flow of the gas-phase etchant is then discontinued.
[0056] The regrowth method can be performed on the newly-etched surface of the GaN crystal 100 by MOCVD or HVPE after the above-described etching method has been performed. Similar to when the gas-phase etchant additionally includes hydrogen, the regrowth can be performed without removing the GaN crystal 100 from the susceptor 2 inside the reactor 1.
[0057] Next, the procedure used when the gas-phase etchant is diluted with inert gas will be described. Since this procedure is almost identical to using the undiluted gas-phase etchant described above, only the parts that differ will be described.
[0058] In this procedure, an additional gas cylinder (not shown) filled with the inert gas to be used for diluting the gas-phase etchant is provided in addition to the gas cylinders 71 and 72. Alternatively, the gas cylinders 71 and 72 can be filled with the respective gases diluted with inert gas.
[0059] The GaN crystal 100 is etched by adjusting the relative rates of flow of gas from the cylinders 71 and 72 and the additional gas cylinder to establish the specified mixture ratio and dilution ratio of the gas-phase etchant immediately before introduction into the reactor 1. The resulting gas-phase etchant diluted with the inert gas is introduced the gas into the reactor 1 in the quantity specified described above, and etching takes place by the etching reaction described in the appropriate one of formulas (a) to (c) described above.
[0060] When the etching process is complete, the GaN crystal 100 may remain on the susceptor 2 so that regrowth by MOCVD, HVPE or some other suitable regrowth process can be performed.
EXAMPLE 1
Sample Preparation
[0062] In the following description of the first example, a GaN crystal will be used as an example of a Group III-nitride crystal. The GaN crystal is prepared for etching by depositing a patterned two-layer mask structure of Au (top layer)/Ti (bottom layer) on the surface to be etched, as shown in the cross-sectional view of Figure 2. Apertures in the two-layer mask structure define the parts of the surface that will be etched by the gas-phase etching method.
[0063] Figure 2 shows the stainless-steel mask 11 placed in contact with the surface 103 of the GaN crystal sample 109 composed of the GaN crystal 100 grown on the sapphire substrate 101. Apertures, such as the aperture 105, in the stainless-steel mask define the areas of the surface 103 on which the two-layer mask structure will be formed. First, Ti is sputtered to the desired thickness in the direction of the arrows 107. Then, the layer of Ti is covered with a layer of Au sputtered to the desired thickness. The stainless-steel mask 11 is then removed from the surface 103. This leaves parts of the surface 103 protected from etching by the two-layer mask structure 12.
[0064] Figure 3 shows the GaN crystal sample 109 just prior to etching. The two-layer mask structure 12 deposited on the parts of the surface 103 of the GaN crystal 100 that were exposed by the apertures in the stainless-steel mask 11 protects these parts of the surface during the following gas-phase etching process.
Etching
[0065] The GaN crystal sample 109 having parts of its surface 103 protected by the two-layer mask structure 12, as just described, is etched by executing the procedure described above using the reactor 1 shown in Figure 1.
[0066] The GaN crystal sample 109 shown in Figure 3 was set in the state shown in Figure 1 in the reactor 1. The thermocouple 3 was set to measure the temperature of the sample 109.
[0067] Next, as described above, the vacuum pump 5 was operated to decrease the pressure inside the reactor 1. The valve 61 was then opened to introduce hydrogen from the gas cylinder 71 into the interior of the reactor 1. This purged the interior of the reactor 1 with hydrogen. The gas flow was continued until the pressure inside the reactor reached about atmospheric pressure.
[0068] Next, while maintaining the flow of hydrogen from the gas cylinder 71, the valves 62 and 63 were opened, and the mass flow controller 91 was adjusted to provide a flow rate of about 1 ℓ/minute of hydrogen from the gas cylinder 71 into the reactor 1. Before the hydrogen enters into the reactor 1 from the gas cylinder 71, it is mixed with a flow from the gas cylinder 72 of about 100 mℓ/minute of hydrogen chloride gas diluted to 5 vol % with hydrogen gas. The flow rate of the dilute hydrogen chloride gas is set by adjusting the mass flow controller 92.
[0069] The heat source 8 was then operated to heat the GaN crystal sample 109 to a temperature of 640°C. Heating the sample continued until the thermocouple 3 indicated 640°C. The flow of the gaseous etchant over the sample 109 was continued for one hour after the temperature of the sample reached 640°C to etch the exposed surface of the sample.
[0070] Figure 4 shows the GaN sample 109 at the end of the etching method according to the invention.
[0071] The state of the etched surface of a typical sample after etching is shown in Figure 5(A), which is a copy from a video printer (150× magnification). In Figures 4 and 5(A), e indicates the etched surface. The depth of the etched surface was 0.17 µm in this example.
[0072] The area indicated by 100 in Figure 5(A) is the part of the surface 103 of the GaN crystal sample 109 protected by the two-layer masking structure 12 shown in Figure 4, i.e., the part of the surface of the GaN crystal sample that is not etched.
[0073] For comparison, Figure 5(B) shows a photomicrograph of the etched surface resulting from a conventional dry-etch process in which 1,000W microwaves were used, and a GaN crystal sample was plasma etched by Cl2/H2 gas (0.13 Pa (1mTorr) -150 VDC). This photomicrograph was published in Low Bias Electron Cyclotron Resonance Plasma Etching of GaN, AIN, and InN, 64 APPL. PHYS. LETT. (17), 25 April 1994.
[0074] Figure 5(B) shows an etched surface that is fairly rough and is pitted by the holes p. In contrast, the etched surface produced by the gas-phase etching method and shown in Figure 5(A) is smooth and unpitted.
EXAMPLE 2
Sample preparation
[0075] In the second example, the Group III-Nitride crystal sample that was etched was a structure in which crystals of GaN/GaInN/AlGaN were successively grown on a sapphire substrate. The masking material was a layer of SiO2. Apertures were formed in the SiO2 masking layer to define the parts of the surface of the crystal sample to be etched in a way similar to the apertured two-layer making structure described above.
Etching
[0076] Except for a temperature of 690°C and an etching time of one hour, the sample 109 was etched in the same way as that described above with reference to example 1.
Performing MOCVD Regrowth on the Etched Surface
[0077] After the end of the gas-phase etching process, MOCVD was carried out on the sample 109 without removing the sample from the reactor 1. An additional GaN crystal structure was regrown on the etched surface by MOCVD to form a buried growth. It is predicted that the service life of the buried laser structure resulting from the regrowth will be significantly longer than a similar structure made using conventional plasma etching because the gas-phase etching process does not damage the crystal structure.
EXAMPLE 3
[0078] Except for a number of changes in the hydrogen flow rate, the GaN crystal sample 109 was etched under the same conditions as described above with reference to example 1. The etching depth produced after one hour was measured to measure an etch rate. Figure 6 shows how the measured rate varies with the concentration of the HCI gas in the gas-phase etchant at a given temperature. The concentration of the HCI gas was varied by keeping the flow rate of the HCI gas fixed, and varying the flow rate of the hydrogen gas. As the flow rate of the hydrogen gas is increased to decrease the concentration of the HCI gas in the gas-phase etchant, the etch rate increases to a maximum, marked with an "X" in Figure 6, and then falls as the flow rate of the hydrogen gas is further increased. The hydrogen flow rate corresponding to the maximum etch rate is the optimum hydrogen flow rate.
[0079] Increasing the temperature and/or and increasing the HCI flow rate (i.e., increasing the HCl gas concentration) increases the maximum etch rate. In other words, increasing temperature moves the optimum hydrogen flow rate to the left in Figure 6. Observations showed that, at temperatures above 800°C, the etch rate increases monotonically with increasing HCl concentration.
[0080] The gas-phase etching method described above provides an etched surface with excellent surface quality and enable regrowth to be performed on the etched surface without additional treatment of the etched surface.
[0081] Moreover, unlike plasma etching, the gas-phase etching method provides a rapid etch rate without damaging the crystal structure. Further, since plasma irradiation is not used, etching and regrowth can be performed in the same reactor. Therefore, the preferred gas-phase etching method prevents such problems as the formation of an oxide film or carbon film that obstructs regrowth on the etched surface, or contamination of the regrowth interface with impurities. Semiconductor devices, such as light-emitting diodes or semiconductor lasers that emit ultraviolet to green light, light detectors, transistors for use at high temperature, and other semiconductor elements that are made using crystals etched by the described gas-phase etching method can have high performance and significantly extended lifetimes.
1. A method of gas-phase etching a Group III nitride crystal, comprising the steps of:
providing a gas-phase etchant including at least one of a halogen in gaseous form and a halogen hydride in gaseous form;
heating the Group III-nitride crystal to a temperature in the range of 500-900°C; and
etching the Group III-nitride crystal in a flow of the gas-phase etchant characterized in that the etching creates a predetermined pattern in the crystal, and wherein, in the step of providing the gas-phase etchant, the gas-phase etchant includes hydrogen gas and wherein the group III-nitride crystal includes at least one of GaN, AlN, InN, GaInN, AlInN, AlGaN, AlGaInN, and BAlGaInN.
2. A method as in claim 1, wherein:
in the step of providing said gas-phase etchant, the gas-phase etchant is diluted with inert gas; and
in the step of etching the Group III-nitride crystal, the Group III-nitride is etched in a flow of said gas-phase etchant diluted with the inert gas.
3. A method as in claim 1 or 2 wherein the step of etching the Group III-nitride crystal
includes the step of setting the flow to a pressure equal to atmospheric pressure.
4. A method as in any preceding claim wherein, in the step of providing a said gas-phase
etchant, a gas-phase etchant including hydrogen and HCI is provided.
5. A method as in any preceding claim, wherein the method further comprises the step
of regrowing additional Group III-nitride crystal on the etched surface after the
step of etching the Group III-nitride crystal to form an etched surface in the Group
III-nitride crystal.
6. A method as in claim 5, comprising the step of providing a reactor;
the steps of heating the Group III-nitride crystal and etching the Group III-nitride crystal being performed inside the reactor; and
the step of regrowing additional Group III-nitride crystal being additionally performed inside the reactor without removing the Group III-nitride crystal from the reactor after the etched surface is formed.
1. Verfahren zum Gasphasenätzen eines Gruppe-III-Nitrid-Kristalls, umfassend die Schritte:
wobei der Gruppe-III-Nitrid-Kristall mindestens eines von GaN, AIN, InN, GaInN, AlInN, AlGaN, AlGaInN und BAlGaInN umfaßt.
Bereitstellen eines Gasphase-Ätzmittels, das mindestens eines von einem Halogen in gasförmigem Zustand und einem Halogenhydrid in gasförmigem Zustand umfaßt;
Erwärmen des Gruppe-III-Nitrid-Kristalls auf eine Temperatur in dem Bereich von 500 - 900° C; und
Ätzen des Gruppe-III-Nitrid-Kristalls in einem Strom des Gasphase- Ätzmittels,
dadurch gekennzeichnet, daß das Ätzen ein vorherbestimmtes Muster in dem Kristall erzeugt und wobei, in dem Schritt des Bereitstellens des Gasphase-Ätzmittels, das Gasphase-Ätzmittel Wasserstoffgas umfaßt undwobei der Gruppe-III-Nitrid-Kristall mindestens eines von GaN, AIN, InN, GaInN, AlInN, AlGaN, AlGaInN und BAlGaInN umfaßt.
2. Verfahren nach Anspruch 1, wobei:
in dem Schritt des Bereitstellens des Gasphase-Ätzmittels, das Gasphase-Ätzmittel mit inertem Gas verdünnt wird; und,
in dem Schritt des Ätzens des Gruppe-III-Nitrid-Kristalls, das Gruppe-III-Nitrid in einem Strom des mit dem inerten Gas verdünnten Gasphase-Ätzmittels geätzt wird.
3. Verfahren nach Anspruch 1 oder 2, wobei der Schritt des Ätzens des Gruppe-III-Nitrid-Kristalls
den Schritt des Einstellens des Stroms auf einen dem Atmosphärendruck gleichen Druck
umfaßt.
4. Verfahren nach einem der voranstehenden Ansprüche, wobei, in dem Schritt des Bereitstellens
des Gasphase-Ätzmittels, ein Wasserstoff und HCl umfassendes Gasphase-Ätzmittel bereitgestellt
wird.
5. Verfahren nach einem der voranstehenden Ansprüche, wobei das Verfahren ferner den
Schritt des Wiederaufwachsenlassens von zusätzlichem Gruppe-III-Nitrid-Kristall an
der geätzten Oberfläche nach dem Schritt des Ätzens des Gruppe-III-Nitrid-Kristalls,
um eine geätzte Oberfläche an dem Gruppe-III-Nitrid-Kristall zu bilden, umfaßt.
6. Verfahren nach Anspruch 5, umfassend den Schritt des Bereitstellens eines Reaktors;
wobei die Schritte des Erwärmens des Gruppe-III-Nitrid-Kristalls und des Ätzens des Gruppe-III-Nitrid-Kristalls innerhalb des Reaktors durchgeführt werden; und
wobei der Schritt des Wiederaufwachsenlassens von zusätzlichem Gruppe-III-Nitrid-Kristall zusätzlich innerhalb des Reaktors durchgeführt wird, ohne daß der Gruppe-III-Nitrid-Kristall aus dem Reaktor entfernt wird, nachdem die geätzte Oberfläche gebildet worden ist.
wobei die Schritte des Erwärmens des Gruppe-III-Nitrid-Kristalls und des Ätzens des Gruppe-III-Nitrid-Kristalls innerhalb des Reaktors durchgeführt werden; und
wobei der Schritt des Wiederaufwachsenlassens von zusätzlichem Gruppe-III-Nitrid-Kristall zusätzlich innerhalb des Reaktors durchgeführt wird, ohne daß der Gruppe-III-Nitrid-Kristall aus dem Reaktor entfernt wird, nachdem die geätzte Oberfläche gebildet worden ist.
1. Procédé d'attaque en phase gazeuse d'un cristal à base de nitrure du groupe III, comprenant
les étapes de :
introduction d'un agent d'attaque en phase gazeuse comportant au moins un halogène sous une forme gazeuse ou un halogène hybride sous forme gazeuse ;
chauffage du cristal à base de nitrure du groupe III à une température dans la plage de 500 à 900°C ; et
attaque du cristal à base de nitrure du groupe III dans un flux de l'agent d'attaque en phase gazeuse, caractérisé en ce que l'attaque crée un profil prédéterminé sur le cristal, et dans lequel, dans l'étape d'introduction de l'agent d'attaque en phase gazeuse, l'agent d'attaque en phase gazeuse comprend de l'hydrogène gazeux et dans lequel le cristal de nitrure du groupe III comporte au moins l'un des éléments suivants : GaN, AIN, InN, GaInN, AlInN, AlGaN, AlGaInN, et BAlGaInN.
2. Procédé selon la revendication 1, dans lequel :
dans l'étape d'introduction dudit agent d'attaque en phase gazeuse, l'agent d'attaque en phase gazeuse est dilué dans un gaz inerte ; et
dans l'étape d'attaque du cristal à base de nitrure du groupe III, le nitrure du groupe III est attaqué dans un flux dudit agent d'attaque en phase gazeuse dilué dans le gaz inerte.
3. Procédé selon la revendication 1 ou 2, dans lequel l'étape d'attaque du cristal à
base de nitrure du groupe III comporte l'étape de réglage du flux à une pression égale
à la pression atmosphérique.
4. Procédé selon l'une quelconque des revendications précédentes, dans lequel, dans l'étape
d'introduction dudit agent d'attaque en phase gazeuse, un agent d'attaque en phase
gazeuse comportant de l'hydrogène et du HCl est introduit.
5. Procédé selon l'une quelconque des revendications précédentes, dans lequel le procédé
comporte, en outre, l'étape de croissance d'un cristal à base de nitrure du groupe
III additionnel sur la surface attaquée, après l'étape d'attaque du cristal à base
de nitrure du groupe III destinée à former une surface attaquée sur le cristal à base
de nitrure du groupe III.
6. Procédé selon la revendication 5, comprenant l'étape consistant à utiliser un réacteur
;
les étapes de chauffage du cristal à base de nitrure du groupe III et d'attaque du cristal à base de nitrure du groupe III étant exécutés à l'intérieur du réacteur ; et
l'étape de croissance de cristal à base de nitrure du groupe III additionnel étant, en outre, exécutée à l'intérieur du réacteur sans retirer le cristal à base de nitrure du groupe III du réacteur après formation de la surface attaquée.
les étapes de chauffage du cristal à base de nitrure du groupe III et d'attaque du cristal à base de nitrure du groupe III étant exécutés à l'intérieur du réacteur ; et
l'étape de croissance de cristal à base de nitrure du groupe III additionnel étant, en outre, exécutée à l'intérieur du réacteur sans retirer le cristal à base de nitrure du groupe III du réacteur après formation de la surface attaquée.