A METHOD OF FABRICATING LDD MOS TRANSISTORS UTILIZING HIGH ENERGY ION IMPLANT THROUGH AN OXIDE LAYER - Patent 0797842

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EP 0 797 842 A1

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(43)	Date of publication:
	01.10.1997 Bulletin 1997/40

(21)	Application number: 95942891.0

(22)	Date of filing: 22.11.1995

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International Patent Classification (IPC):

H01L 21/ 336^{( . )}

H01L 21/ 8238^{( . )}

(86)	International application number:
	PCT/US1995/015299

(87)	International publication number:
	WO 1996/019011 (20.06.1996 Gazette 1996/28)

(84)	Designated Contracting States:
	DE

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Priority:

16.12.1994 US 19940357676

(71)	Applicant: ADVANCED MICRO DEVICES INC.
	Sunnyvale, California 94088-3453 (US)

(72)	Inventors:
	CHANG, K., Y. Los Gatos, CA 95032 (US) GARDNER, Mark, I. Cedar Creek, TX 78612 (US) HAUSE, Fred Austin, TX 78749 (US)

(74)	Representative: Sanders, Peter Colin Christopher, et al
	BROOKES & MARTIN High Holborn House 52/54 High Holborn London WC1V 6SE London WC1V 6SE (GB)

(54)	A METHOD OF FABRICATING LDD MOS TRANSISTORS UTILIZING HIGH ENERGY ION IMPLANT THROUGH AN OXIDE LAYER