<?xml version="1.0" encoding="UTF-8"?><!DOCTYPE ep-patent-document PUBLIC "-//EPO//EP PATENT DOCUMENT 1.4//EN" "ep-patent-document-v1-4.dtd"><ep-patent-document id="EP0804802A1" file="EP96901172NWA1.xml" lang="en" doc-number="0804802" date-publ="19971105" kind="A1" country="EP" status="n" dtd-version="ep-patent-document-v1-4"><SDOBI lang="en"><B000><eptags><B001EP>......DE..ESFRGB..IT....NLSE........................................................................</B001EP><B003EP>*</B003EP><B007EP>EPregister to ST.36 EBD process v 1.0 kbaumeister@epo.org (15 Jan 2013)</B007EP></eptags></B000><B100><B110>0804802</B110><B130>A1</B130><B140><date>19971105</date></B140><B190>EP</B190></B100><B200><B210>96901172.0</B210><B220><date>19960117</date></B220><B240><B241><date>19970703</date></B241></B240><B250>en</B250><B251EP>en</B251EP><B260>en</B260></B200><B300><B310>19950000152</B310><B320><date>19950118</date></B320><B330><ctry>SE</ctry></B330></B300><B400><B405><date>19971105</date><bnum>199745</bnum></B405><B430><date>19971105</date><bnum>199745</bnum></B430></B400><B500><B510EP><classification-ipcr sequence="1"><text>H01L  21/    28            A I                    </text></classification-ipcr><classification-ipcr sequence="2"><text>H01L  21/    04            A I                    </text></classification-ipcr><classification-ipcr sequence="3"><text>H01L  21/   203            A I                    </text></classification-ipcr><classification-ipcr sequence="4"><text>H01L  29/    24            A I                    </text></classification-ipcr><classification-ipcr sequence="5"><text>H01L  29/    45            A I                    </text></classification-ipcr><classification-ipcr sequence="6"><text>H01L  29/   861            A I                    </text></classification-ipcr></B510EP><B540><B541>en</B541><B542>A METHOD OF PRODUCING AN OHMIC CONTACT AND A SEMICONDUCTOR DEVICE PROVIDED WITH SUCH OHMIC CONTACT</B542><B541>fr</B541><B542>PROCEDE DE FABRICATION D'UN CONTACT OHMIQUE ET DISPOSITIF A SEMI-CONDUCTEUR EQUIPE D'UN TEL CONTACT OHMIQUE</B542><B541>de</B541><B542>VERFAHREN ZUR HERSTELLUNG EINES OHMSCHEN KONTAKTS UND EINE HALBLEITERVORRICHTUNGMIT EINEM SOLCHEN OHMSCHEN KONTAKT</B542></B540></B500><B700><B710><B711><snm>TELEFONAKTIEBOLAGET LM ERICSSON</snm><adr><str /><city>126 25 Stockholm</city><ctry>SE</ctry></adr></B711></B710><B720><B721><snm>KRONLUND, Bertil, Karl</snm><adr><str>Inedalsgatan 17, 3 tr</str><city>S-112 33 Stockholm</city><ctry>SE</ctry></adr></B721></B720><B740><B741><snm>Rosenquist, Per Olof, et al</snm><adr><str>Bergenstrahle &amp; Lindvall AB, P.O. Box 17704</str><city>118 93 Stockholm</city><ctry>SE</ctry></adr></B741></B740></B700><B800><B840><ctry>DE</ctry><ctry>ES</ctry><ctry>FR</ctry><ctry>GB</ctry><ctry>IT</ctry><ctry>NL</ctry><ctry>SE</ctry></B840><B860><B861><dnum><anum>SE1996000035</anum></dnum><date>19960117</date></B861><B862>en</B862></B860><B870><B871><dnum><pnum>WO1996022611</pnum></dnum><date>19960725</date><bnum>199634</bnum></B871></B870></B800></SDOBI></ep-patent-document>