Triple well flash memory cell and fabrication process

(19)

(11)

EP 0 810 667 A3

(12)	EUROPEAN PATENT APPLICATION

(88)	Date of publication A3:
	10.12.1997 Bulletin 1997/50

(43)	Date of publication A2:
	03.12.1997 Bulletin 1997/49

(21)	Application number: 97108659.0

(22)	Date of filing: 30.05.1997

(51)	International Patent Classification (IPC)⁶: H01L 27/115, H01L 21/8247, G11C 16/06

(84)	Designated Contracting States:
	DE FR GB

(30)

Priority:

30.05.1996 US 18694 P
27.05.1997 US 863917
27.05.1997 US 863918
27.05.1997 US 863919
27.05.1997 US 863920

(71)	Applicant: Hyundai Electronics America, Inc.
	San Jose, CA 95134 (US)

(72)	Inventor:
	The designation of the inventor has not yet been filed ()

(74)	Representative: Sparing - Röhl - Henseler Patentanwälte
	Rethelstrasse 123 40237 Düsseldorf 40237 Düsseldorf (DE)

(54)	Triple well flash memory cell and fabrication process

(57) A structure for a flash memory cell is described in which a triple well is formed with the memory cell residing in a P-well, which in turn is deposed in an N-well in a P-type substrate. The structure provides the ability to operate such memories with considerably lower operating potentials than prior art devices. A process for fabricating the flash memory cell is also described.

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