<?xml version="1.0" encoding="UTF-8"?><!DOCTYPE ep-patent-document PUBLIC "-//EPO//EP PATENT DOCUMENT 1.4//EN" "ep-patent-document-v1-4.dtd"><ep-patent-document id="EP0812477A1" file="EP96908627NWA1.xml" lang="en" doc-number="0812477" date-publ="19971217" kind="A1" country="EP" status="n" dtd-version="ep-patent-document-v1-4"><SDOBI lang="en"><B000><eptags><B001EP>..BE..DE..ESFRGB..IT......SE........................................................................</B001EP><B003EP>*</B003EP><B007EP>EPregister to ST.36 EBD process v 1.0 kbaumeister@epo.org (15 Jan 2013)</B007EP></eptags></B000><B100><B110>0812477</B110><B130>A1</B130><B140><date>19971217</date></B140><B190>EP</B190></B100><B200><B210>96908627.0</B210><B220><date>19960227</date></B220><B240><B241><date>19970828</date></B241></B240><B250>en</B250><B251EP>en</B251EP><B260>en</B260></B200><B300><B310>19950112826</B310><B320><date>19950228</date></B320><B330><ctry>IL</ctry></B330></B300><B400><B405><date>19971217</date><bnum>199751</bnum></B405><B430><date>19971217</date><bnum>199751</bnum></B430></B400><B500><B510EP><classification-ipcr sequence="1"><text>H01L  21/   302            A I                    </text></classification-ipcr><classification-ipcr sequence="2"><text>H01L  21/   203            A I                    </text></classification-ipcr><classification-ipcr sequence="3"><text>H01L  21/   311            A I                    </text></classification-ipcr><classification-ipcr sequence="4"><text>H01L  21/   312            A I                    </text></classification-ipcr><classification-ipcr sequence="5"><text>H01L  21/   768            A I                    </text></classification-ipcr><classification-ipcr sequence="6"><text>H01L  23/   522            A I                    </text></classification-ipcr></B510EP><B540><B541>en</B541><B542>AN IMPROVED LASER ABLATEABLE MATERIAL</B542><B541>fr</B541><B542>MATERIAU AMELIORE POUVANT SUBIR UNE ABLATION PAR UN RAYONNEMENT LASER</B542><B541>de</B541><B542>EIN VERBESSERTER LASERABSCHEIDBARES MATERIAL</B542></B540></B500><B700><B710><B711><snm>Chip Express Corporation</snm><adr><str>Suite 105, 2903 Bunker Hill Lane</str><city>Santa Clara, CA 95054</city><ctry>US</ctry></adr></B711></B710><B720><B721><snm>JANAI, Meir</snm><adr><str>12 Buber Street</str><city>34861 Haifa</city><ctry>IL</ctry></adr></B721><B721><snm>CASSUTO, Yoram</snm><adr><str>8 Harakofot Street</str><city>34749 Haifa</city><ctry>IL</ctry></adr></B721><B721><snm>SILVERSTEIN, Michael, Stephen</snm><adr><str>17/4 Alter Street</str><city>32984 Haifa</city><ctry>IL</ctry></adr></B721><B721><snm>ZEHAVI, Sharone</snm><adr><str>1575 Tenaka Place I-4</str><city>Sunnyvale California 94087</city><ctry>US</ctry></adr></B721></B720><B740><B741><snm>Weisert, Annekäte, Dipl.-Ing. Dr.-Ing., et al</snm><adr><str>Patentanwälte Kraus Weisert &amp; Partner Thomas-Wimmer-Ring 15</str><city>80539 München</city><ctry>DE</ctry></adr></B741></B740></B700><B800><B840><ctry>BE</ctry><ctry>DE</ctry><ctry>ES</ctry><ctry>FR</ctry><ctry>GB</ctry><ctry>IT</ctry><ctry>SE</ctry></B840><B860><B861><dnum><anum>US1996002920</anum></dnum><date>19960227</date></B861><B862>en</B862></B860><B870><B871><dnum><pnum>WO1996027212</pnum></dnum><date>19960906</date><bnum>199640</bnum></B871></B870></B800></SDOBI></ep-patent-document>