(19)
(11) EP 0 832 717 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
11.11.1998 Bulletin 1998/46

(43) Date of publication A2:
01.04.1998 Bulletin 1998/14

(21) Application number: 97307533.6

(22) Date of filing: 25.09.1997
(51) International Patent Classification (IPC)6: B24B 9/06
(84) Designated Contracting States:
AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
Designated Extension States:
AL LT LV RO SI

(30) Priority: 27.09.1996 JP 256858/96

(71) Applicant: Shin-Etsu Handotai Co., Ltd
Chiyoda-ku Tokyo (JP)

(72) Inventors:
  • Hasegawa, Fumihiko, c/o Shin-Etsu Handotai Co. Ltd
    mura, Nishi-shirakawa-gun, Fukushima (JP)
  • Kuroda, Yasuyoshi, c/o SEH Shirakawa R&D Center
    Nishi-shirakawa-gun, Fukushima (JP)
  • Yamada, Masayuki, c/o SEH Shirakawa R&D Center
    Nishi-shirakawa-gun, Fukushima (JP)

(74) Representative: Rackham, Stephen Neil 
GILL JENNINGS & EVERY, Broadgate House, 7 Eldon Street
London EC2M 7LH
London EC2M 7LH (GB)

   


(54) Wafer processing


(57) A method for processing a peripheral chamfered portion of a wafer (W) having an orientation flat portion (W1), comprises: a first honing step for honing the orientation flat portion (W1) of the wafer (W) by relatively pressing the orientation flat portion (W1) against a cylindrical honing stone (21) with a first pressing force (F1), while rotating the wafer (W) at a first rotational speed (Ns1) and rotating the honing stone (21); a second honing step for honing the circumferential portion (W2) of the wafer (W) by relatively pressing the circumferential portion (W2) against the cylindrical honing stone (21) with a second pressing force (F2), while rotating the wafer (W) at a second rotational speed (Nsl) and rotating the honing stone (21); a third honing step for honing the edge portions (W3) of the wafer (W) by relatively pressing the edge portions (W3) against the cylindrical honing stone (21) with a third pressing force (F3), while rotating the wafer (W) at a third rotational speed (Ns3) and rotating the honing stone (21); and a polishing step for polishing the honed orientation flat portion (W1), the honed circumference portion (W2) and the honed edge portions (W3); wherein the first, second and third rotational speeds (Ns1, Ns2 and NS3), of the wafer (W) are different from one another; or the first, second and third pressing forces (F1, F2 and F3) are different from one another.






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