ON-SITE MANUFACTURE OF ULTRA-HIGH-PURITY NITRIC ACID FOR SEMICONDUCTOR PROCESSING

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EP 0 835 168 A1

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(43)	Date of publication:
	15.04.1998 Bulletin 1998/16

(21)	Application number: 96918226.0

(22)	Date of filing: 05.06.1996

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International Patent Classification (IPC):

B01D 1/ 00^{( . )}
B01D 3/ 02^{( . )}
B01J 39/ 04^{( . )}
C01B 7/ 07^{( . )}
C01B 15/ 013^{( . )}
C01C 1/ 16^{( . )}
H01L 21/ 306^{( . )}

B01D 3/ 00^{( . )}
B01D 3/ 14^{( . )}
B08B 7/ 04^{( . )}
C01B 7/ 19^{( . )}
C01C 1/ 02^{( . )}
F26B 7/ 00^{( . )}
H01L 21/ 311^{( . )}

(86)	International application number:
	PCT/US1996/009215

(87)	International publication number:
	WO 1996/039263 (12.12.1996 Gazette 1997/02)

(84)	Designated Contracting States:
	DE FR GB IT NL

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Priority:

05.06.1995 WO 1995US07649

(71)	Applicant: STARTEC VENTURES, INC.
	Fallbrook, CA 92028 (US)

(72)	Inventors:
	HOFFMAN, Joe, G. Cardiff, CA 92007 (US) CLARK, R., Scot Fallbrook, CA 92028 (US) YUAN, Wallace, I. Irvine, CA 92714 (US)

(74)	Representative: Daniels, Jeffrey Nicholas, et al
	Page White & Farrer 54 Doughty Street London WC1N 2LS London WC1N 2LS (GB)

(54)	ON-SITE MANUFACTURE OF ULTRA-HIGH-PURITY NITRIC ACID FOR SEMICONDUCTOR PROCESSING