<?xml version="1.0" encoding="UTF-8"?><!DOCTYPE ep-patent-document PUBLIC "-//EPO//EP PATENT DOCUMENT 1.4//EN" "ep-patent-document-v1-4.dtd"><ep-patent-document id="EP0836524A1" file="EP96918351NWA1.xml" lang="en" doc-number="0836524" date-publ="19980422" kind="A1" country="EP" status="n" dtd-version="ep-patent-document-v1-4"><SDOBI lang="en"><B000><eptags><B001EP>......DE....FRGB..IT....NL..........................................................................</B001EP><B003EP>*</B003EP><B007EP>EPregister to ST.36 EBD process v 1.0 kbaumeister@epo.org (15 Jan 2013)</B007EP></eptags></B000><B100><B110>0836524</B110><B130>A1</B130><B140><date>19980422</date></B140><B190>EP</B190></B100><B200><B210>96918351.0</B210><B220><date>19960605</date></B220><B240><B241><date>19980105</date></B241></B240><B250>en</B250><B251EP>en</B251EP><B260>en</B260></B200><B300><B310>1995US07649</B310><B320><date>19950605</date></B320><B330><ctry>WO</ctry></B330><B310>19950017123P</B310><B320><date>19950707</date></B320><B330><ctry>US</ctry></B330></B300><B400><B405><date>19980422</date><bnum>199817</bnum></B405><B430><date>19980422</date><bnum>199817</bnum></B430></B400><B500><B510EP><classification-ipcr sequence="1"><text>B08B   3/    02            A I                    </text></classification-ipcr><classification-ipcr sequence="2"><text>B01D  15/    04            A I                    </text></classification-ipcr><classification-ipcr sequence="3"><text>B01J  39/    04            A I                    </text></classification-ipcr><classification-ipcr sequence="4"><text>C01B   7/    07            A I                    </text></classification-ipcr><classification-ipcr sequence="5"><text>C01B   7/    19            A I                    </text></classification-ipcr><classification-ipcr sequence="6"><text>C01B  15/   013            A I                    </text></classification-ipcr><classification-ipcr sequence="7"><text>C01C   1/    02            A I                    </text></classification-ipcr><classification-ipcr sequence="8"><text>C01C   1/    16            A I                    </text></classification-ipcr><classification-ipcr sequence="9"><text>H01L  21/   304            A I                    </text></classification-ipcr><classification-ipcr sequence="10"><text>H01L  21/   306            A I                    </text></classification-ipcr><classification-ipcr sequence="11"><text>H01L  21/   311            A I                    </text></classification-ipcr></B510EP><B540><B541>en</B541><B542>ON-SITE GENERATION OF ULTRA-HIGH-PURITY BUFFERED HF FOR SEMICONDUCTOR PROCESSING</B542><B541>fr</B541><B542>GENERATION SUR SITE DE PEROXYDE D'HYDROGENE TAMPONNE A PURETE ULTRA-HAUTE POUR LE TRAITEMENT DE SEMI-CONDUCTEURS</B542><B541>de</B541><B542>ERZEUGUNG VOR ORT VON ULTRAHOCHREINEM GEPUFFERTEM WASSERSTOFFPEROXID FÜRDIE HALBLEITERVERARBEITUNG.</B542></B540></B500><B700><B710><B711><snm>STARTEC VENTURES, INC.</snm><adr><str>1327 Farrand Road</str><city>Fallbrook, CA 92028</city><ctry>US</ctry></adr></B711></B710><B720><B721><snm>HOFFMAN, Joe, G.</snm><adr><str>Suite F, 2140 Orinda Drive</str><city>Cardiff, CA 92007</city><ctry>US</ctry></adr></B721><B721><snm>CLARK, R., Scot</snm><adr><str>1327 Farrand Road</str><city>Fallbrook, CA 92028</city><ctry>US</ctry></adr></B721></B720><B740><B741><snm>Daniels, Jeffrey Nicholas, et al</snm><adr><str>Page White &amp; Farrer 54 Doughty Street</str><city>London WC1N 2LS</city><ctry>GB</ctry></adr></B741></B740></B700><B800><B840><ctry>DE</ctry><ctry>FR</ctry><ctry>GB</ctry><ctry>IT</ctry><ctry>NL</ctry></B840><B860><B861><dnum><anum>US1996009556</anum></dnum><date>19960605</date></B861><B862>en</B862></B860><B870><B871><dnum><pnum>WO1996039237</pnum></dnum><date>19961212</date><bnum>199702</bnum></B871></B870></B800></SDOBI></ep-patent-document>