<?xml version="1.0" encoding="UTF-8"?><!DOCTYPE ep-patent-document PUBLIC "-//EPO//EP PATENT DOCUMENT 1.4//EN" "ep-patent-document-v1-4.dtd"><ep-patent-document id="EP0836719A1" file="EP96919439NWA1.xml" lang="en" doc-number="0836719" date-publ="19980422" kind="A1" country="EP" status="n" dtd-version="ep-patent-document-v1-4"><SDOBI lang="en"><B000><eptags><B001EP>......DE....FRGB..IT....NL..........................................................................</B001EP><B003EP>*</B003EP><B007EP>EPregister to ST.36 EBD process v 1.0 kbaumeister@epo.org (15 Jan 2013)</B007EP></eptags></B000><B100><B110>0836719</B110><B130>A1</B130><B140><date>19980422</date></B140><B190>EP</B190></B100><B200><B210>96919439.0</B210><B220><date>19960605</date></B220><B240><B241><date>19980102</date></B241></B240><B250>en</B250><B251EP>en</B251EP><B260>en</B260></B200><B300><B310>1995US07649</B310><B320><date>19950605</date></B320><B330><ctry>WO</ctry></B330><B310>19950018104P</B310><B320><date>19950707</date></B320><B330><ctry>US</ctry></B330><B310>19960017828P</B310><B320><date>19960308</date></B320><B330><ctry>US</ctry></B330></B300><B400><B405><date>19980422</date><bnum>199817</bnum></B405><B430><date>19980422</date><bnum>199817</bnum></B430></B400><B500><B510EP><classification-ipcr sequence="1"><text>G05D  11/    03            A I                    </text></classification-ipcr><classification-ipcr sequence="2"><text>C01B   7/    19            A I                    </text></classification-ipcr><classification-ipcr sequence="3"><text>C01C   1/    02            A I                    </text></classification-ipcr><classification-ipcr sequence="4"><text>C01C   1/    16            A I                    </text></classification-ipcr><classification-ipcr sequence="5"><text>H01L  21/   306            A I                    </text></classification-ipcr><classification-ipcr sequence="6"><text>H01L  21/   311            A I                    </text></classification-ipcr></B510EP><B540><B541>en</B541><B542>SYSTEM AND METHOD FOR ON-SITE MIXING OF ULTRA-HIGH-PURITY CHEMICALS FOR SEMICONDUCTOR PROCESSING</B542><B541>fr</B541><B542>SYSTEME ET PROCEDE DE MELANGE IN SITU DE PRODUITS CHIMIQUES A PURETE ULTRAELEVEE POUR L'ELABORATION DE SEMI-CONDUCTEURS</B542><B541>de</B541><B542>VERFAHREN UND SYSTEM ZUM ÖRTLICHEN MISCHEN VON EXTREM HOCHREINEN CHEMIKALIEN FÜR DIE HALBLEITERHERSTELLUNG</B542></B540></B500><B700><B710><B711><snm>STARTEC VENTURES, INC.</snm><adr><str>1327 Ferrand Road</str><city>Fallbrook, CA 92028</city><ctry>US</ctry></adr></B711></B710><B720><B721><snm>HOFFMAN, Joe G.</snm><adr><str>Suite F, 2140 Orinda Drive</str><city>Cardiff, CA 92007</city><ctry>US</ctry></adr></B721><B721><snm>CLARK, R., Scot</snm><adr><str>1327 Farrand Road</str><city>Fallbrook, CA 92028</city><ctry>US</ctry></adr></B721><B721><snm>JONES, Allen, H., Jr.</snm><adr><str>11960 N. 1112th Street</str><city>Scottsdale, AZ 85259</city><ctry>US</ctry></adr></B721></B720><B740><B741><snm>Vesin, Jacques, et al</snm><adr><str>L'AIR LIQUIDE, S.A., Service Propriété Industrielle, 75 quai d'Orsay</str><city>75321 Paris Cédex 07</city><ctry>FR</ctry></adr></B741></B740></B700><B800><B840><ctry>DE</ctry><ctry>FR</ctry><ctry>GB</ctry><ctry>IT</ctry><ctry>NL</ctry></B840><B860><B861><dnum><anum>US1996010389</anum></dnum><date>19960605</date></B861><B862>en</B862></B860><B870><B871><dnum><pnum>WO1996039651</pnum></dnum><date>19961212</date><bnum>199702</bnum></B871></B870></B800></SDOBI></ep-patent-document>