RADIATION-EMITTING SEMICONDUCTOR DIODE, AND METHOD OF MANUFACTURING SUCH A DIODE

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EP 0 846 342 A1

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(43)	Date of publication:
	10.06.1998 Bulletin 1998/24

(21)	Application number: 97920923.0

(22)	Date of filing: 29.05.1997

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International Patent Classification (IPC):

H01S 5/ 00^{( . )}
H01L 29/ 15^{( . )}
H01S 5/ 042^{( . )}
H01S 5/ 343^{( . )}
H01S 5/ 30^{( . )}

H01L 21/ 329^{( . )}
H01L 33/ 30^{( . )}
H01S 5/ 20^{( . )}
H01S 5/ 22^{( . )}
H01S 5/ 32^{( . )}

(86)	International application number:
	PCT/IB1997/000612

(87)	International publication number:
	WO 1997/050133 (31.12.1997 Gazette 1998/05)

(84)	Designated Contracting States:
	DE FR GB NL

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Priority:

24.06.1996 EP 19960201749

(71)	Applicant: Philips Electronics N.V.
	5621 BA Eindhoven (NL)

(72)	Inventors:
	DE POORTER, Johannes, Antonius NL-5656 AA Eindhoven (NL) VALSTER, Adrian NL-5656 AA Eindhoven (NL) BROUWER, Arnoud, Adrianus NL-5656 AA Eindhoven (NL)

(74)	Representative: Smeets, Eugenius Theodorus J. M., et al
	INTERNATIONAAL OCTROOIBUREAU B.V., Prof. Holstlaan 6 5656 AA Eindhoven 5656 AA Eindhoven (NL)

(54)	RADIATION-EMITTING SEMICONDUCTOR DIODE, AND METHOD OF MANUFACTURING SUCH A DIODE