METAL STACK FOR INTEGRATED CIRCUIT HAVING TWO THIN LAYERS OF TITANIUM WITH DEDICATED CHAMBER DEPOSITIONS - Patent 0852809

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EP 0 852 809 A1

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(43)	Date of publication:
	15.07.1998 Bulletin 1998/29

(21)	Application number: 96933891.0

(22)	Date of filing: 25.09.1996

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International Patent Classification (IPC):

H01L 21/ 28^{( . )}
H01L 23/ 52^{( . )}

H01L 21/ 3205^{( . )}
H01L 23/ 532^{( . )}

(86)	International application number:
	PCT/US1996/015351

(87)	International publication number:
	WO 1997/012399 (03.04.1997 Gazette 1997/15)

(84)	Designated Contracting States:
	DE FR GB IE IT

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Priority:

29.09.1995 US 19950536155

(71)	Applicant: INTEL CORPORATION
	Santa Clara, CA 95052 (US)

(72)	Inventors:
	RASTOGI, Rajiv Portland, OR 97229 (US) BAI, Peng Aloha, OR 97007 (US) AHMED, Sohail Portland, OR 97229 (US) MEYER, William, K. Cornelius, OR 97113 (US)

(74)	Representative: Wombwell, Francis, et al
	Potts, Kerr & Co. 15, Hamilton Square Birkenhead Merseyside L41 6BR Birkenhead Merseyside L41 6BR (GB)

(54)	METAL STACK FOR INTEGRATED CIRCUIT HAVING TWO THIN LAYERS OF TITANIUM WITH DEDICATED CHAMBER DEPOSITIONS