(19)
(11)
EP 0 853 818 A1
(12)
(43)
Date of publication:
22.07.1998
Bulletin 1998/30
(21)
Application number:
96927387.0
(22)
Date of filing:
15.08.1996
(51)
International Patent Classification (IPC):
H01L
29/
10
( . )
H01L
29/
423
( . )
H01L
29/
78
( . )
(86)
International application number:
PCT/US1996/013039
(87)
International publication number:
WO 1997/007548
(
27.02.1997
Gazette 1997/10)
(84)
Designated Contracting States:
DE FR GB IT NL
(30)
Priority:
21.08.1995
US 19950537156
(71)
Applicant:
SILICONIX Incorporated
Santa Clara California 95054 (US)
(72)
Inventors:
PITZER, Dorman, C.
San Ramon, CA 94583 (US)
HSHIEH, Fwu-Iuan
Saratoga, CA 95070 (US)
CHANG, Mike, F.
Cupertino, CA 95014 (US)
(74)
Representative:
Kolb, Georg
Daimler-Benz AG, Postfach 35 35
74025 Heilbronn
74025 Heilbronn (DE)
(54)
LOW VOLTAGE SHORT CHANNEL TRENCH DMOS TRANSISTOR