(19)
(11) EP 0 857 541 A3

(12) EUROPÄISCHE PATENTANMELDUNG

(88) Veröffentlichungstag A3:
03.02.1999  Patentblatt  1999/05

(43) Veröffentlichungstag A2:
12.08.1998  Patentblatt  1998/33

(21) Anmeldenummer: 98101376.6

(22) Anmeldetag:  27.01.1998
(51) Internationale Patentklassifikation (IPC)6: B24B 37/04, B24B 41/06
(84) Benannte Vertragsstaaten:
AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
Benannte Erstreckungsstaaten:
AL LT LV MK RO SI

(30) Priorität: 06.02.1997 JP 38427/97

(71) Anmelder: Speedfam Co., Ltd.
Ohta-ku, Tokyo (JP)

(72) Erfinder:
  • Izumi, Shigeto
    Ayase-shi, Kanagawa-ken (JP)
  • Arai, Hatsuyuki
    Ayase-shi, Kanagawa-ken (JP)

(74) Vertreter: Füchsle, Klaus, Dipl.-Ing. et al
Hoffmann Eitle, Patent- und Rechtsanwälte, Arabellastrasse 4
81925 München
81925 München (DE)

   


(54) Chemisch-mechanische Poliervorrichtung


(57) A CMP apparatus has an extended life and improved polishing accuracy and is capable of not only preventing a wafer 100 from dashing out of a carrier 1 and being damaged or wound, but also adjusting the elasticity of a pressure pad to a desired value in a fine manner. The CMP apparatus includes the carrier 1, a suction mechanism 4 having an air passage 40 disposed to open on a lower surface of the carrier 1 for drawing air, and a surface plate 300 having a hard polishing pad 220 and a soft pad 210 adhered thereto. The pressure pad in the form of a porous thin Teflon layer 7 having a thickness of 5 mm is adhered to a lower surface of the carrier 1 which holds the wafer 100. Thus, the rear surface of the wafer 100 is maintained in a horizontal state by the Teflon layer 7, and the warpage and/or irregularities in the thickness of the wafer 100, which appear on the front surface of the wafer 100, can be absorbed by the soft pad 210 and the hard polishing pad 220.






Recherchenbericht