FORMING CONTACTS ON SEMICONDUCTOR SUBSTRATES FOR RADIATION DETECTORS AND IMAGING DEVICES - Patent 0864171

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EP 0 864 171 A1

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(43)	Date of publication:
	16.09.1998 Bulletin 1998/38

(21)	Application number: 96941641.0

(22)	Date of filing: 26.11.1996

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International Patent Classification (IPC):

G01T 1/ 24^{( . )}
H01L 21/ 8234^{( . )}
H01L 27/ 146^{( . )}
H01L 31/ 0264^{( . )}

H01L 21/ 28^{( . )}
H01L 27/ 14^{( . )}
H01L 31/ 0224^{( . )}

(86)	International application number:
	PCT/EP1996/005348

(87)	International publication number:
	WO 1997/020342 (05.06.1997 Gazette 1997/24)

(84)	Designated Contracting States:
	AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
	Designated Extension States:
	AL LT LV RO SI

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Priority:

29.11.1995 GB 19950024387

(60)	Divisional application:
	99124797.4 / 1001469

(71)	Applicant: SIMAGE OY
	02150 Espoo (FI)

(72)	Inventors:
	ORAVA, Risto, Olavi FIN-00730 Helsinki (FI) PYYHTIA, Jouni, Ilari FIN-01360 Vantaa (FI) SCHULMAN, Tom, Gunnar FIN-02430 Masala (FI) SARAKINOS, Miltiadis, Evangelos CH-1205 Geneva (CH) SPARTIOTIS, Konstantinos, Evangelos FIN-00170 Helsinki (FI) JALAS, Panu, Yrjänä FIN-00200 Helsinki (FI)

(74)	Representative: Potter, Julian Mark, et al
	D. Young & Co., 21 New Fetter Lane London EC4A 1DA London EC4A 1DA (GB)

(54)	FORMING CONTACTS ON SEMICONDUCTOR SUBSTRATES FOR RADIATION DETECTORS AND IMAGING DEVICES