......DE....FRGB..IT....NLSE....................................................JDIM350 (Ver 2.1 Jan 2001) 2999001/00867952CORRECTED EUROPEAN PATENT SPECIFICATIONB8B120030528W172DEBibliographieENBibliographyFRBibliographieEP98105408.3199803251998092119991230enenen762469719970327JP2251569719970821JP20030528200322199809301998402002092520023920010207200305282003227 7H 01L 41/24 A 7C 23C 18/12 BdeVerfahren zur Herstellung eines piezoelektrischen ElementsenProcess of producing a piezoelectric elementfrProcédé de fabrication d'élément piézoélectriqueEP-A- 0 727 832OTHMAN M B ET AL: "A novel process for alkoxide-derived PZT thin films with multi-seeding layers" ISAF '96. PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS (CAT. NO.96CH35948), ISAF '96. PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, EAST BRUNSWICK, NJ, USA, 18-21 A, ISBN 0-7803-3355-1, 1996, NEW YORK, NY, USA, IEEE, USA, pages 731-734 vol.2, XP002070778101114232.0117986120010612QIU, Hongc/o Seiko Epson Corporation, 3-5, Owa 3-chomeSuwa-shi, Nagano-kenJPMoriya, Soichic/o Seiko Epson Corporation, 3-5, Owa 3-chomeSuwa-shi, Nagano-kenJPKamei, Hiroyukic/o Seiko Epson Corporation, 3-5, Owa 3-chomeSuwa-shi, Nagano-kenJPSumi, Kojic/o Seiko Epson Corporation, 3-5, Owa 3-chomeSuwa-shi, Nagano-kenJPMurai, Masamic/o Seiko Epson Corporation, 3-5, Owa 3-chomeSuwa-shi, Nagano-kenJPNishiwaki, Tsutomuc/o Seiko Epson Corporation, 3-5, Owa 3-chomeSuwa-shi, Nagano-kenJPSEIKO EPSON CORPORATION00730008EP 14872-011/iwEPSON CORPORATION, SEIKO4-1, Nishi-Shinjuku 2-chomeShinjuku-ku, TokyoJPGrünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät00100721Maximilianstrasse 5880538 MünchenDEDEFRGBITNLSE