SILICON BIPOLAR JUNCTION TRANSISTOR HAVING REDUCED EMITTER LINE WIDTH - Patent 0868749

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EP 0 868 749 A1

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(43)	Date of publication:
	07.10.1998 Bulletin 1998/41

(21)	Application number: 96943758.0

(22)	Date of filing: 17.12.1996

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International Patent Classification (IPC):

H01L 29/ 73^{( . )}
H01L 29/ 08^{( . )}

H01L 21/ 331^{( . )}
H01L 29/ 732^{( . )}

(86)	International application number:
	PCT/US1996/019962

(87)	International publication number:
	WO 1997/023910 (03.07.1997 Gazette 1997/29)

(84)	Designated Contracting States:
	DE FR GB IT NL

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Priority:

22.12.1995 US 19950009135P
22.12.1995 US 19950009141P
31.10.1996 US 19960741444
31.10.1996 US 19960742224

(71)	Applicant: THE WHITAKER CORPORATION
	Wilmington, Delaware 19808 (US)

(72)	Inventors:
	TAJADOD, James Dedham, MA 02026 (US) BOLES, Timothy, Edward Tyngsboro, MA 01879 (US) NOONAN, Paulette, Rita Dracut, MA 10826 (US)

(74)	Representative: Warren, Keith Stanley, et al
	BARON & WARREN 18 South End Kensington London W8 5BU London W8 5BU (GB)

(54)	SILICON BIPOLAR JUNCTION TRANSISTOR HAVING REDUCED EMITTER LINE WIDTH