| (19) |
 |
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(11) |
EP 0 906 965 A3 |
| (12) |
EUROPEAN PATENT APPLICATION |
| (88) |
Date of publication A3: |
|
06.12.2000 Bulletin 2000/49 |
| (43) |
Date of publication A2: |
|
07.04.1999 Bulletin 1999/14 |
| (22) |
Date of filing: 30.09.1998 |
|
| (51) |
International Patent Classification (IPC)7: C23C 16/34 |
|
| (84) |
Designated Contracting States: |
|
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
Designated Extension States: |
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AL LT LV MK RO SI |
| (30) |
Priority: |
02.10.1997 US 942996
|
| (71) |
Applicant: AIR PRODUCTS AND CHEMICALS, INC. |
|
Allentown, PA 18195-1501 (US) |
|
| (72) |
Inventors: |
|
- Laxman, Ravi Kumar
Encinitas, CA 92024 (US)
- Roberts, David Allen
Escondido, CA 92046 (US)
- Hochberg, Arthur Kenneth
Salana Beach, CA 92075 (US)
- Hockenhull, Herman Gene
Oceanside, CA 92054 (US)
- Kaminsky, Felicia Diane
Encinitas, CA 92024 (US)
|
| (74) |
Representative: Schwabe - Sandmair - Marx |
|
Stuntzstrasse 16
81677 München
81677 München (DE) |
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| |
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| (54) |
Silicon nitride from bis (tertiarybutylamino) silane |
(57) A process for the low pressure chemical vapor deposition of silicon nitride from
ammonia and a silane of the formula: (t-C
4H
9NH)
2SiH
2 provides improved properties of the resulting film for use in the semiconductor industry.