(19)
(11) EP 0 908 889 A3

(12) EUROPEAN PATENT APPLICATION

(88) Date of publication A3:
28.04.1999 Bulletin 1999/17

(43) Date of publication A2:
14.04.1999 Bulletin 1999/15

(21) Application number: 98117290.1

(22) Date of filing: 11.09.1998
(51) International Patent Classification (IPC)6: G11C 7/00
(84) Designated Contracting States:
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
Designated Extension States:
AL LT LV MK RO SI

(30) Priority: 16.09.1997 JP 290235/97

(71) Applicant: NEC CORPORATION
Tokyo (JP)

(72) Inventors:
  • Maesako, Taketo
    Minato-ku, Tokyo (JP)
  • Yamamoto, Kouki
    Minato-ku, Tokyo (JP)
  • Matsui, Yoshinori
    Minato-ku, Tokyo (JP)
  • Sakakibara, Kenichi
    Minato-ku, Tokyo (JP)

(74) Representative: Glawe, Delfs, Moll & Partner 
Patentanwälte Postfach 26 01 62
80058 München
80058 München (DE)

   


(54) Semiconductor integrated circuit device


(57) A semiconductor integrated circuit device is comprised a main memory portion, a sub memory portion composed of a plurality of memory cell groups and a bi-directional data transfer circuit provided between the main memory portion and the sub memory portion, wherein power source voltages of the main memory portion and the sub memory portion are different from each other. Therefore, the semiconductor integrated circuit device of the present invention has a main memory suitable for being accessed from a plurality of data processors.






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