(57) There is provided a method of fabricating a semiconductor device, comprising the
steps of forming an insulating film (2) and an electrically conductive film (3) on
a silicon substrate (1), forming a first opening (2a) in the insulating film (2) and
a second opening (3a) in the electrically conductive film (3), the second opening
(3a) having a smaller length than the first opening (2a) so that tunnel portions (2b)
are formed in the insulating film (2) below the electrically conductive film (3),
and forming a Si1-XGeX base epitaxial layer (5) on the silicon substrate (1) in the first opening (2a),
wherein a process gas includes disilane, an etching gas includes chlorine, a ratio
of the chlorine to the disilane is 1/50 or greater, and a growth temperature is 640
degrees centigrade or smaller.
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