(19)
(11) EP 0 913 003 A1

(12)

(43) Date of publication:
06.05.1999 Bulletin 1999/18

(21) Application number: 97933308.0

(22) Date of filing: 03.07.1997
(51) International Patent Classification (IPC): 
H01L 31/ 107( . )
(86) International application number:
PCT/US1997/011768
(87) International publication number:
WO 1998/000873 (08.01.1998 Gazette 1998/01)
(84) Designated Contracting States:
AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

(30) Priority: 03.07.1996 US 19960035349P

(71) Applicant: ADVANCED PHOTONIX, INC.
Camarillo, CA 93012 (US)

(72) Inventors:
  • JOSTAD, Leon, Leslie
    Cayucos, CA 93430 (US)
  • BOISVERT, Joseph, Charles
    Thousand Oaks, CA 91362 (US)
  • MONTROY, John, Thomas
    Thousand Oaks, CA 91362 (US)

(74) Representative: Eidelsberg, Victor Albert, et al 
Cabinet Flechner 22, Avenue de Friedland
75008 Paris
75008 Paris (FR)

   


(54) AVALANCHING SEMICONDUCTOR DEVICE HAVING AN EPITAXIALLY GROWN LAYER