(19)
(11)
EP 0 913 003 A1
(12)
(43)
Date of publication:
06.05.1999
Bulletin 1999/18
(21)
Application number:
97933308.0
(22)
Date of filing:
03.07.1997
(51)
International Patent Classification (IPC):
H01L
31/
107
( . )
(86)
International application number:
PCT/US1997/011768
(87)
International publication number:
WO 1998/000873
(
08.01.1998
Gazette 1998/01)
(84)
Designated Contracting States:
AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
(30)
Priority:
03.07.1996
US 19960035349P
(71)
Applicant:
ADVANCED PHOTONIX, INC.
Camarillo, CA 93012 (US)
(72)
Inventors:
JOSTAD, Leon, Leslie
Cayucos, CA 93430 (US)
BOISVERT, Joseph, Charles
Thousand Oaks, CA 91362 (US)
MONTROY, John, Thomas
Thousand Oaks, CA 91362 (US)
(74)
Representative:
Eidelsberg, Victor Albert, et al
Cabinet Flechner 22, Avenue de Friedland
75008 Paris
75008 Paris (FR)
(54)
AVALANCHING SEMICONDUCTOR DEVICE HAVING AN EPITAXIALLY GROWN LAYER