Field of the Invention
[0001] This invention relates to a high voltage regulator.
[0002] The invention specifically relates to a high voltage regulator which is partly supplied
by a boosted voltage and is adapted to deliver a regulated output voltage on an output
terminal, starting from a sampled voltage obtained by dividing the regulated output
voltage, which regulator comprises at least a comparator element being supplied by
a supply voltage and feedback connected to a divider of said regulated output voltage.
[0003] The invention also concerns a method of regulating a voltage obtained from a boosted
voltage.
[0004] The invention particularly, but not exclusively, relates to a high voltage regulator
for a memory of the 'flash' type, and the description which follows is given in connection
with this field of application for simplicity of illustration only.
Background Art
[0005] As is well known, many applications concerning electronic circuits integrated in
a semiconductor require that voltages above the supply voltage Vcc and below the ground
voltage reference GND be generated. This requirement is most stringent with devices
which are supplied by a low voltage, as in the current trend for many electronic devices
among which are electrically programmable and erasable non-volatile memories.
[0006] A boosted voltage is usually generated by means of a voltage multiplier or "booster"
circuit, which is purposely formed within the integrated circuit itself.
[0007] The booster circuit output is not at a regulated value but depends to supply voltage,
temperature, output current, and process factors.
[0008] In such cases, it becomes necessary to smooth the output voltage Vout by means of
a purposely provided regulator circuit. In particular, a regulator for a voltage multiplier
circuit of the charge pump type, i.e. a high voltage regulator, must be designed with
high accuracy criteria because charge pump circuits can only supply limited value
currents.
[0009] Basic requirements for a regulator of high voltages generated by a booster circuit
of the charge pump type are:
- low current consumption by the charge pump booster circuits which supply the high
voltage to be regulated;
- high precision, especially as regards absence of overshoot and ripples in the regulated
voltage, and its independence of the parasitic effects that are typical of high voltages;
- sufficiently fast settling during transient phases, such as the regulator triggering
phase;
- low space requirements, i.e. reduced occupation of silicon area.
[0010] A high voltage regulator 1 according to the prior art is shown schematically in Figure
1 appended hereto.
[0011] The high voltage regulator 1 is partly supplied by a boosted voltage PUMPOUT generated
by a charge pump circuit which supplies a high voltage at a small current capacity.
[0012] The output voltage Vout is regulated by resistive division of the boosted voltage
PUMPOUT.
[0013] In this way, an output voltage Vout can be obtained for the high voltage regulator
1.
[0014] The voltage regulator 1 comprises a resistive divider consisting of two resistive
elements R1 and R2, connected between an output terminal OUT and a ground voltage
reference GND. The central connection node X of the resistive elements R1 and R2 is
connected to a non-inverting input terminal of a comparator element 2 having an inverting
input terminal connected to an input terminal IN of the high voltage regulator 1 and
a supply terminal connected to a supply voltage reference Vdd.
[0015] The input terminal IN of the high voltage regulator 1 receives a reference voltage
Vref of constant value, usually for utilisation by several circuits in the same device.
[0016] The comparator element 2 also has an output terminal connected to the supply terminal
of a drive transistor M1.
[0017] The drive transistor M1, specifically one of the NMOS type, has its source terminal
connected to the ground voltage reference GND and its drain terminal connected to
the control gate terminal of an output transistor M2, itself connected between the
boosted voltage reference PUMPOUT and the output terminal OUT of the high voltage
regulator 1.
[0018] The high voltage regulator 1 further includes a load transistor M3, specifically
one of the PMOS type, which is connected between the boosted voltage reference PUMPOUT
and the control gate terminal of the output transistor M2 and has its control gate
terminal connected to the ground voltage reference GND. This load transistor M3 has
the n-well terminal connected to its source terminal and, hence, to the boosted voltage
reference PUMPOUT.
[0019] The regulated output voltage Vout is sampled by the resistive divider of the high
voltage regulator 1, which then provides a feedback of the same. Therefore, the value
of this regulated output voltage Vout will be dependent on both the value of the reference
voltage Vref and the ratio of the resistive divider R1, R2.
[0020] While achieving its objective, this solution is less than fully satisfactory and
has certain drawbacks.
[0021] A major problem originates from the resistive divider R1, R2.
[0022] First, to conform with the above requirement for the charge pump booster circuit
supplying the boosted voltage PUMPOUT to have a low current consumption, this resistive
divider, and particularly the combined resistances of the resistors R1 and R2, should
be rather large (in the MΩ range).
[0023] However, the use of a resistive divider of this size clashes with the other requirements
set forth above for the high voltage regulator 1, namely precision, speed, and low
space occupation. In fact, to provide an integrated resistor, there are essentially
two methods that can be used:
- formation in an n+ diffusion;
- formation in an n-well.
[0024] Actually, in view of the size (in the MΩ range) involved, only the last-mentioned
method can be used for forming the resistive divider of the prior art high voltage
regulator 1, since the n-well of an integrated circuit has a higher specific resistivity
than n
+ diffusions. An n-well resistor is shown schematically in Figure 2.
[0025] Unfortunately, resistors formed in n-wells give rise to two important problems:
1. They exhibit a high parasitic capacitance Cpar toward the substrate layer of the
integrated circuit.
2. They exhibit a varying resistance, dependent in particular on the voltages applied
across them, due to the depleted reverse-biases area that exists between the n-well
and the substrate.
[0026] Referring to the high voltage regulator 1 shown in Figure 1, the parasitic capacitance
associated with a resistive divider so formed causes delayed following of a divided
voltage Vsample at the central connection node X of the resistive elements R1 and
R2 with respect to variations occurring in the regulated output voltage Vout.
[0027] This delay reflects in a slowed settling of the output voltage Vout, as well as overshooting
and rippling thereof, in contrast with the requirements set above for the high voltage
regulator 1.
[0028] In addition, the varying character of the resistance of the divider formed in the
n-well makes it difficult to obtain a desired value for the regulated output voltage
Vout. In fact, this varying resistance is difficult to model and reproduce. Thus,
the high voltage regulator 1 incorporating such a divider is unsuitable to meet the
aforementioned requirements.
[0029] The underlying technical problem of this invention is to provide a high voltage regulator,
in particular for voltages supplied by booster circuits, which exhibits low current
consumption and high precision features, as well as sufficient speed during the transient
phases, with no overshoot and ripples, and reduced space requirements. In this way,
the requirements for such regulators can be met and the drawbacks besetting the prior
art regulators overcome.
Summary of the Invention
[0030] The idea of solution behind this invention is one of using a diode type of divider
connected to an output voltage reference to be regulated and to a varying reference
voltage.
[0031] Based on this idea of solution, the technical problem is solved by a high voltage
regulator as previously indicated and defined in the characterising portion of Claim
1.
[0032] The problem is also solved by a method of regulating a voltage obtained from a boosted
voltage as previously indicated and defined in the characterising portion of Claim
12.
[0033] The features and advantages of a high voltage regulator according to the invention
will be apparent from the following description of embodiments thereof, given by way
of non-limitative examples with reference to the accompanying drawings.
Brief Description of the Drawings
[0034] In the drawings:
Figure 1 shows in schematic form a high voltage regulator including a resistive divider
according to the prior art;
Figure 2 is a detail view of a detail of the regulator in Figure 1;
Figure 3 shows in schematic form a high voltage regulator including a diode divider
according to the invention;
Figure 4 shows a modified embodiment of the high voltage regulator according to the
invention.
Detailed Description
[0035] Referring in particular to Figure 3, generally and schematically shown at 3 is a
high voltage regulator according to the invention. Corresponding circuit elements
and signals, described in connection with the prior art high voltage regulator 1,
will be denoted by the same alphanumerical references.
[0036] The high voltage regulator 3 is partly supplied by a boosted voltage PUMPOUT, generated
by a charge pump circuit (not shown) which supplies a high voltage at a small current
capacity. The high voltage regulator 3 has an input terminal IN receiving a varying
reference voltage Vref_v, and an output terminal OUT delivering a regulated output
voltage Vout.
[0037] The output voltage Vout is regulated by having it divided by a diode divider 4.
[0038] The diode divider 4 comprises a plurality of diodes D1, D2,..., Dn, D1', D2',...,
Dn' connected between the output terminal OUT and a ground voltage reference GND.
The diode divider 4 is functionally split into first 5 and second 6 legs respectively
comprising first and second diode pluralities D1, D2,..., Dn and D1', D2',..., Dn'
which are connected together at a central connection node Y.
[0039] The central connection node Y is connected to a non-inverting input terminal of a
comparator element 2 which has an inverting input terminal connected to the input
terminal IN of the high voltage regulator 1 and a supply terminal connected to a supply
voltage reference Vdd, similar as the prior art high voltage regulator 1.
[0040] The comparator element 2 also has an output terminal connected to the control terminal
of a drive transistor M1 which has its source terminal connected to the ground voltage
reference GND and its drain terminal connected to the control terminal of an output
transistor M2, itself connected between the boosted voltage reference PUMPOUT and
the output terminal OUT of the high voltage regulator 3.
[0041] The high voltage regulator 3 further comprises a load transistor M3, specifically
one of the PMOS type, which is connected between the boosted voltage reference PUMPOUT
and the control terminal of the output transistor M2 and has its control terminal
connected to the ground voltage reference GND. This load transistor M3 has an n-well
terminal connected to the source terminal and, hence, to the boosted voltage reference
PUMPOUT.
[0042] The regulated output voltage Vout is sampled by the resistive divider of the high
voltage regulator 3 at the central connection node X. The comparator element 2 in
combination with the transistors M1, M2 and M3 then provide a negative feedback of
the sampled voltage Vsample.
[0043] Advantageously in this invention, the comparator element 2 basically comprises an
operational amplifier or a simple differential. In either cases, this operational
amplifier or simple differential is supplied by the supply voltage Vdd and, accordingly,
can draw large amounts of current from the supply voltage reference Vdd, which makes
it specially fast.
[0044] On the other hand, the portion which includes the drive transistor M1, output transistor
M2, and load transistor M3 is supplied by the boosted voltage PUMPOUT, i.e. a higher
voltage than the supply voltage Vdd.
[0045] It should be noted that the varying reference voltage Vref_v may lie anywhere between
the supply voltage reference Vdd and the ground voltage reference GND.
[0046] Advantageously in this invention, the diode divider 4 may comprise a plurality of
diode-configured MOS transistors, which would exhibit none of the aforementioned problems
affecting the resistive dividers of conventional circuits.
[0047] This diode divider 4 may be formed of PMOS transistors, as shown in Figure 3; likewise,
it could be formed of NMOS transistors or semiconductor junctions.
[0048] In all cases:
1. The diode-connected MOS transistors have a high transresistance, and limited silicon
area requirements for their formation.
2. The reduced area requirement eliminates the presence of undesired parasitic capacitances,
thereby enabling the divided voltage Vsample at the central connection node Y of the
diode divider 4 to most promptly follow the value of the voltage to be regulated (Vout)
at the output terminal OUT, thus enhancing both accuracy and speed during transient
phases and attenuating overshoot and ripples of the high voltage regulator 3 as a
whole.
3. The equivalent resistance of the diode divider 4 is in no way concerned with the
voltages applied across it, which means that the diode divider 4 will be unaffected
by parasitic effects typical of high voltages.
[0049] The value of the regulated output voltage Vout of the high voltage regulator 3 according
to the invention is given as:

where:
nu, nd are the (obviously natural) numbers of diodes included in the first 5 and second
6 legs of the diode divider 4.
[0050] If, from a given value of the varying reference voltage Vref_v, numbers (which obviously
must be natural numbers) of diodes n
u, n
d included in the first 5 and second 6 legs of the diode divider 4 can be found which
yield the desired value for the regulated output voltage Vout, then the varying reference
voltage Vref_v can be used.
[0051] It should be noted that for the diode divider 4 to perform as expected, its diodes
should be in the on state. For this to occur, a voltage drop at least equal to the
diode threshold voltage VT is required across each diode.
[0052] On the contrary, if no number pair n
u, n
d of diodes exist in the first and second legs 5 and 6 of the diode divider 4 which
can yield the desired value for the regulated output voltage Vout, the reference voltage
Vref_v should be changed. This does not represent a problem, since for a value of
the reference voltage Vref_v lying, as already stated, between the value of the supply
voltage Vdd and the ground GND, a different starting reference voltage Vref' can be
derived therefrom, in a known manner by the skilled persons in the art, which lies
anywhere between the supply voltage Vdd and the ground GND. A circuit adapted to provide
the new starting reference voltage Vref' is simple to design and allows the same supply
voltage Vdd to be used from which a large amount of current can be extracted.
[0053] Such a circuit, therefore, exhibits low current consumption of the booster circuits,
is highly accurate, and shows no overshoot and ripples of the regulated voltage, which
will be free of parasitic effects typical of high voltages and settle at a fast rate
during the transient phases.
[0054] The single drawback of such a circuit is a waste of occupied area, especially where
a new starting reference voltage Vref' with a high value is to be generated.
[0055] Figure 4 shows a modified embodiment 3' of the high voltage regulator according to
the invention. In particular, this regulator 3' has the input terminal IN connected
to the ground voltage reference GND and to the inverting input of the comparator element
2, itself having a non-inverting input connected to a central connection node Z of
the diode divider 4.
[0056] The comparator element 2, comprising in particular an operational amplifier being
supplied by the supply voltage Vdd, also has an output terminal OUT'.
[0057] In the modified embodiment of Figure 4, the diode divider 4 is connected between
the varying reference voltage reference Vref_v and the output terminal OUT of the
high voltage regulator. This diode divider 4 comprises first 5 and second 6 diode
legs connected together at the central connection node Z.
[0058] Thus, the high voltage regulator 3' is a regulator of negative voltages. Its operation
is similar to that of the high voltage regulator 3 shown in Figure 3.
[0059] In particular, the output voltage Vout to be regulated is sampled through the diode
divider 4, in this case with respect to the varying reference voltage Vref_v rather
than to the ground GND. The voltage value so sampled is then compared, by means of
the operational amplifier 2, with the ground GND through a suitable feedback network
(not shown) connected to the output terminal OUT'.
[0060] In summary, the high voltage regulator of this invention provides a regulated output
voltage from a boosted voltage obtained, in particular, by means of a charge pump
booster circuit, through a diode divider. In particular, the output voltage is regulated
by comparison of the sampled voltage from the divider with a varying reference voltage
or the ground.
1. A high voltage regulator partly supplied by a boosted voltage (PUMPOUT) and adapted
to deliver a regulated output voltage (Vout) on an output terminal (OUT), starting
from a sampled voltage (Vsample) obtained by dividing the regulated output voltage
(Vout), which regulator comprises at least a comparator element (2) being supplied
by a supply voltage (Vdd) and feedback connected to a divider (4) of said regulated
output voltage (Vout), characterised in that said divider (4) is a diode divider connected
between the output terminal (OUT) and a first comparison voltage reference (GND, Vref_v)
and has a central connection node (Y, Z) connected to a non-inverting terminal of
the comparator element (2).
2. A high voltage regulator according to Claim 1, characterised in that it further comprises
an input terminal (IN), connected to a second comparison voltage reference (Vref_v,
GND) and to an inverting terminal of the comparator element (2) incorporated to the
high voltage regulator (3).
3. A high voltage regulator according to Claim 2, characterised in that said diode divider
(4) comprises first and second legs (5, 6) of diodes (D1,D2,...,Du, D1',D2',...,Dd')
connected in series with one another at said central connection node (Y, Z), said
first leg (5) of diodes being connected between the output terminal (OUT) and the
central connection node (Y, Z) of said divider, and said second leg (6) being connected
between the central connection node (Y, Z) and the first comparison voltage reference
(GND, Vref_v).
4. A high voltage regulator according to Claim 3, characterised in that the second leg
(6) of diodes is connected between the central connection node (Y) and a ground voltage
reference (GND), and that the input terminal (IN) of the high voltage regulator (3)
is connected to a varying voltage reference (Vref_v).
5. A high voltage regulator according to Claim 1, characterised in that the comparator
element (2) comprises essentially an operational amplifier or a simple differential.
6. A high voltage regulator according to Claim 5, characterised in that only said operational
amplifier or simple differential included in the comparator element (2) is supplied
by the supply voltage (Vdd).
7. A high voltage regulator according to Claim 1, characterised in that said comparator
element (2) has an output terminal connected to the output terminal (OUT) of the high
voltage regulator (3) through a series of the drive transistor (M1), an output transistor
(M2), and a load transistor (M3), said drive transistor (M1) having its control gate
terminal connected to the output terminal of the operational amplifier (2), its source
terminal connected to the ground voltage reference (GND), and its drain terminal connected
to the control gate terminal of the output transistor (M2), said output transistor
(M2) being connected between the boosted voltage reference (PUMPOUT) and the output
terminal (OUT) of the high voltage regulator (3), and said load transistor (M3) being
connected between the boosted voltage reference (PUMPOUT) and the control gate terminal
of the output transistor (M2) and having its control gate terminal connected to the
ground voltage reference (GND).
8. A high voltage regulator according to any one of the preceding claims, characterised
in that the value of the varying reference voltage (Vref_v) ranges from the value
of the supply voltage (Vdd) to the ground value (GND).
9. A high voltage regulator according to Claim 3, characterised in that the second leg
(6) of diodes is connected between the central connection node (Z) and a varying voltage
reference (Vref_v), and that the input terminal (IN) of the high voltage regulator
(3) is connected to a ground voltage reference (GND).
10. A high voltage regulator according to Claim 1, characterised in that the diode divider
(4) comprises a plurality of MOS transistors in diode configuration.
11. A high voltage regulator according to Claim 1, characterised in that the diode divider
(4) comprises a plurality of semiconductor junctions.
12. A high voltage regulator according to any one of the preceding claims, characterised
in that said boosted voltage (PUMPOUT) is generated by a booster circuit adapted to
supply a high voltage at a small current capacity.
13. A method of regulating a voltage (Vout) derived from a boosted voltage (PUMPOUT),
characterised in that it comprises the following steps:
- obtaining a sampled voltage (Vsample) as the voltage value at a central connection
node (Y, Z) of a diode type of divider (4) connected to a reference of the voltage
to be regulated (Vout) and to a first comparison voltage reference (GND, Vref_v);
- regulating said voltage (Vout) according to the comparison of said sampled voltage
(Vsample) with a second comparison voltage reference (Vref_v, GND).
14. A regulating method according to Claim 13, characterised in that the comparison of
said sampled voltage (Vsample) with said second comparison voltage reference (Vref_v,
GND) is performed by an operational amplifier (2) being supplied a supply voltage
(Vdd) and feedback connected to said divider (4), the central connection node (Y,
Z) of the diode divider (4) being connected to a non-inverting terminal of the operational
amplifier (2).
15. A regulating method according to Claim 14, characterised by the step of comparing
the sampled voltage (Vsample) with a varying reference voltage (Vref_v) supplied to
an inverting input of the operational amplifier (2), said diode divider (4) being
connected to said voltage to be regulated (Vout) and to a ground voltage reference
(GND).
16. A regulating method according to Claim 15, characterised in that, with said diode
divider (4) comprising first and second legs (5, 6) of diodes (D1,D2,...,Du,D1',D2',...,Dd')
connected in series with one another at said central connection node (Y, Z), the value
of the voltage to be regulated (Vout) is obtained from the varying reference voltage
(Vref_v) by the following relation:

where:
nu, nd are the numbers of diodes included in the first and second legs (5, 6) of the diode
divider (4).
17. A regulating method according to Claim 16, characterised in that, if the numbers (nu, nd) of diodes included in the first and second legs (5, 6) of the diode divider (4),
said numbers being of necessity natural numbers, can be found from a value whichever
of the varying reference voltage (Vref_v), then a desired value of the regulated voltage
is obtained.
18. A regulating method according to Claim 16, characterised in that, starting from a
given number (nu, nd) of diodes included in the first and second legs (5, 6) of the diode divider (4),
the varying reference voltage (Vref_v) can be varied to obtain a desired value of
the regulated voltage.