(19)
(11) EP 0 944 810 A1

(12)

(43) Date of publication:
29.09.1999 Bulletin 1999/39

(21) Application number: 98932942.0

(22) Date of filing: 26.06.1998
(51) International Patent Classification (IPC): 
G01N 21/ 00( . )
G01N 21/ 41( . )
 G01N 21/ 17( . )
G01N 21/ 47( . )
(86) International application number:
PCT/US1998/013473
(87) International publication number:
WO 1999/000641 (07.01.1999 Gazette 1999/01)
(84) Designated Contracting States:
DE FR GB

(30) Priority: 30.06.1997 US 19970885786
10.09.1997 US 19970926850

(71) Applicant: Koninklijke Philips Electronics N.V.
5621 BA Eindhoven (NL)

(72) Inventors:
  • BANET, Matthew, J.
    Boston, MA 02118 (US)
  • ROGERS, John, A.
    Castle Rock, CO 80104 (US)
  • FUCHS, Martin
    Uxbridge, MA 01569 (US)

(74) Representative: Schouten, Marcus Maria, et al 
INTERNATIONAAL OCTROOIBUREAU B.V., Prof. Holstlaan 6
5656 AA Eindhoven
5656 AA Eindhoven (NL)

   


(54) IMPROVED METHOD AND APPARATUS FOR MEASURING THE CONCENTRATION OF IONS IMPLANTED IN SEMICONDUCTOR MATERIALS