Trench capacitor with epitaxial buried layer - Patent 0949684

(19)

(11)

EP 0 949 684 A3

(12)	EUROPEAN PATENT APPLICATION

(88)	Date of publication A3:
	05.04.2000 Bulletin 2000/14

(43)	Date of publication A2:
	13.10.1999 Bulletin 1999/41

(21)	Application number: 99106682.0

(22)	Date of filing: 01.04.1999

(51)	International Patent Classification (IPC)⁷: H01L 29/94

(84)	Designated Contracting States:
	AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
	Designated Extension States:
	AL LT LV MK RO SI

(30)

Priority:

06.04.1998 US 56119

(71)	Applicant: SIEMENS AKTIENGESELLSCHAFT
	80333 München (DE)

(72)	Inventor:
	Schrems, Martin 01465 Langebrück (DE)

(74)	Representative: Patentanwälte Westphal, Mussgnug & Partner
	Waldstrasse 33 78048 Villingen-Schwenningen 78048 Villingen-Schwenningen (DE)

(54)	Trench capacitor with epitaxial buried layer

(57) A trench capacitor (310) with an epitaxial layer (365) in the lower portion of the trench. The epitaxial layer (365) may be doped to serve as a buried plate.