HIGH RESISTIVITY SILICON CARBIDE SUBSTRATES FOR HIGH POWER MICROWAVE DEVICES - Patent 0956594

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EP 0 956 594 A1

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(43)	Date of publication:
	17.11.1999 Bulletin 1999/46

(21)	Application number: 97904220.0

(22)	Date of filing: 31.01.1997

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International Patent Classification (IPC):

C30B 23/ 00^{( . )}

C30B 23/ 02^{( . )}

(86)	International application number:
	PCT/US1997/001791

(87)	International publication number:
	WO 1998/034281 (06.08.1998 Gazette 1998/31)

(84)	Designated Contracting States:
	AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

(71)	Applicant: Northrop Grumman Corporation
	Los Angeles, California 90067-2199 (US)

(72)	Inventors:
	BARRETT, Donovan, L. Pittsburgh, PA 15235 (US) HOBGOOD, Hudson, M. Murrysville, PA 15668 (US) McHUGH, James, P. Pittsburgh, PA 15235 (US) HOPKINS, Richard, H. Export, PA 15632 (US)

(74)	Representative: O'Reilly, Peter Andrew, et al
	Albihns GmbH, Grasserstrasse 10 80339 München 80339 München (DE)

(54)	HIGH RESISTIVITY SILICON CARBIDE SUBSTRATES FOR HIGH POWER MICROWAVE DEVICES