A METHOD FOR PRODUCING A CHANNEL REGION LAYER IN A VOLTAGE CONTROLLED SEMICONDUCTOR DEVICE - Patent 0958601

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EP 0 958 601 A1

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(43)	Date of publication:
	24.11.1999 Bulletin 1999/47

(21)	Application number: 97928614.0

(22)	Date of filing: 18.06.1997

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International Patent Classification (IPC):

H01L 21/ 04^{( . )}
H01L 29/ 78^{( . )}

H01L 29/ 24^{( . )}

(86)	International application number:
	PCT/SE1997/001088

(87)	International publication number:
	WO 1997/049124 (24.12.1997 Gazette 1998/03)

(84)	Designated Contracting States:
	DE FR GB IT SE

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Priority:

19.06.1996 SE 19960002407

(71)	Applicant: ABB RESEARCH LTD.
	8050 Zürich (CH)

(72)	Inventors:
	HARRIS, Christopher S-191 72 Sollentuna (SE) BAKOWSKI, Mietek S-730 50 Skultuna (SE) ZDANSKY, Lennart S-722 23 Väster s (SE) BIJLENGA, Bo S-730 50 Skultuna (SE)

(74)	Representative: Olsson, Jan, et al
	Bjerkéns Patentbyra KB P.O.Box 1274 801 37 Gävle 801 37 Gävle (SE)

(54)	A METHOD FOR PRODUCING A CHANNEL REGION LAYER IN A VOLTAGE CONTROLLED SEMICONDUCTOR DEVICE