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(11) | EP 0 964 083 A3 |
| (12) | EUROPEAN PATENT APPLICATION |
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| (54) | Method and apparatus for growing a compound semiconductor layer |
| (57) A growth chamber (1) has a cylindrical portion (1b) and an end plate (1a) which closes
an upstream end of the cylindrical portion (1b). The end plate (1a) is provided with
a cation gas material supply inlet (2) and an anion material gas supply inlet (3),
while an exhaust device is provided on the downstream side of the cylindrical portion
(1b). A substrate holder (2) having a substrate support surface (20) is provided in
the cylinder portion (1b). A gas separating member (6) separates flow paths of material
gases from each other, thereby forming on the substrate support surface (20) a plurality
of material gas supply areas. A drive device (7) rotates the substrate holder (5)
with a substrate (4) set on the substrate support surface (20) thereof around the
centre line of the cylindrical portion (1b). Then a cation material and an anion material
gas are alternatively supplied to the surface of the substrate (4). In one embodiment,
the substrate holding surface (40) of the substrate holder (25) has the configuration
of an interior surface of a cylindrical prism having its centre line coincident with
the centre line of the cylindrical portion (1b). In another embodiment, the method
comprises supplying two or more cation gases, or two or more different anion gases,
to the growth chamber (1) during one revolution of the substrate holder. |