(19)
(11) EP 0 966 760 A1

(12)

(43) Date of publication:
29.12.1999 Bulletin 1999/52

(21) Application number: 97904108.0

(22) Date of filing: 07.02.1997
(51) International Patent Classification (IPC): 
H01L 29/ 267( . )
H01L 29/ 20( . )
H01L 29/ 737( . )
(86) International application number:
PCT/US1997/001515
(87) International publication number:
WO 1998/035388 (13.08.1998 Gazette 1998/32)
(84) Designated Contracting States:
AT BE CH DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

(71) Applicant: Northrop Grumman Corporation
Los Angeles, California 90067-2199 (US)

(72) Inventors:
  • AGARWAL, Anant, K.
    Monroeville, PA 15146 (US)
  • MESSHAM, Rowan, L.
    Murrysville, PA 15668 (US)
  • DRIVER, Michael, C.
    McKeesport, PA 15135 (US)

(74) Representative: O'Reilly, Peter Andrew, et al 
Albihns GmbH, Grasserstrasse 10
80339 München
80339 München (DE)

   


(54) ALUMINIUM GALLIUM NITRIDE (ALGAN) BASED HETEROJUNCTION BIPOLAR TRANSISTOR